• 沒有找到結果。

Chapter 6 Concludions and Future Work

6.2 Future Work

Wireless medical microsensors are usually with two different operating modes:

Low-Power Mode and Performance Mode because the well-known signals of the main characteristics of cardiac activity, e.g. heart rate and ECG, are at a very low rate.

More than 99% operating time of sensor nodes are operating in low-power mode to record various physiological signals throughout its life time while only less than 1%

operating time in performance mode to process and transmit real-time informative

cardiovascular parameters to a host. This low-power-mode-dominated scenario is capable of further reducing total energy consumption if dynamic voltage scaling (DVS) technique is applied. The benefit of DVS technique is attributed to the quadratic savings in active CVDD2

energy. In this work, an on-chip switched capacitor(SC) DC-DC converter which can deliver desired supply voltage for each operating mode is integrated with proposed asynchronous 8T SRAM-based FIFO.

Device in low-power mode and performance mode will perform sub-threshold operation and near-threshold operation respectively.

A robust near-/sub-threshold SRAM-based FIFO for WBAN applications is shown in Fig. 6.1(a). To achieve high reliability and extend battery working time, ULV dual-port SRAM-based FIFO is applicable. The conventional dual-port SRAM fails to perform reliable subthreshold operation because of read disturb induced read static noise margin (RSNM) degradation. Plenty of subthreshold SRAMs have been implemented to overcome the degradation. However, threshold voltage shift due to random doping fluctuations and processing variation causes SRAM reliability getting worse. In addition, the reduction of signal level directly hurts the noise margin of memory. As technology scaling, the smaller Ion-Ioff-ratio limits the sharing elements like SRAM. All of the ULV effects are considered in 2Kb proposed 8T SRAM cell, shown in Fig. 6.1(b), in this work.

Besides a near-/sub-threshold memory is required, a novel switched capacitor (SC) DC-DC converter and smart dynamic voltage scaling controller are proposed. The schematic views of them are shown in Fig. 6.2(a) and Fig. 6.2(b), respectively. The SC DC-DC converter uses a pulse frequency modulation (PFM) mode of control to regulate the output voltage. When the output voltage V is above V , the switches are

generator block prevents any overlap between the Φ1 and Φ2 ON phases. The power efficiency of DC-DC converter is no less than 70% over a load current range from 10μA to 100μA. Following a request for a voltage switch (where the signal MODE changes), correct operation of the FIFO is guaranteed by sending a stall request before the actual switching of voltage. Stalling prevents processor operation during the period when the voltage supply is not completely connected. The stored data in FIFO are preserved within the internal circuits. When stalling is finished, a confirmation signal (stall_done) is transmitted back to the supply switch circuit. Finally, the stall signal is released after the new voltage supply is fully connected.

Thermal issues are fast becoming major design constraints in subthreshold systems.

Temperature variations adversely affect system reliability and prompt worst-case design. A dynamic temperature management (DTM) techniques uses to target average-case design and tack the temperature issue at runtime. A novel digital temperature sensor and dynamic temperature management mechanism are proposed.

The schematic views of them are shown in Fig. 6.3(a) and Fig. 6.3(b), respectively.

VVDD

Figure 6.1 (a) Block diagram of Near/Sub- threshold FIFO memory. (b) Proposed 8T Near/Sub-threshold SRAM cell.

Non- Overlapping

Figure 6.3 (a) Self-calibration temperature sensor with adaptive pulse width generator.

(b) DTM algorithm.

Bibliography

[1.1] J. Y. Yu, C. C. Chung, W. C. Liao, C. Y. Lee, ―A sub-mW Multi-Tone CDMA Baseband Transceiver Chipset for Wireless Body Area Network Applications,‖

ISSCC Tech. Digest, pp. 364-609, February 2007.

[1.2] J. Y. Yu, W. C. Liao, and C. Y. Lee, ―An MT-CDMA Based Wireless Body Area Network for Ubiquitous Healthcare Monitoring,‖ IEEE BioCAS, November 2006.

[1.3] D. Markovic, C. C. Wang, L. P. Alarcon, L. T. Tsung, J. M. Rabaey,

"Ultralow-Power Design in Near-Threshold Region," in Proceedings of the IEEE , vol.98, no.2, pp.237-252, Feb. 2010

[1.4] W. H. Cheng and B. M. Baas, ‖ Dynamic Voltage and Frequency Scaling Circuits with Two Supply Voltages,‖ in IEEE Int’l Symp. Circuits and Systems, pp. 1236-1239, June 2008.

[1.5] B. H. Calhoun, J. Bolus, S. Khanna, A. D. Jurik, A. C. Weaver, T. N.

Blalock, ‖Sub-threshold operation and cross-hierarchy design for ultra low power wearable sensors,‖ in IEEE Int’l Symp. Circuits and Systems, pp.

1437-1440, May 2009.

[1.6] B. H. Calhoun, S. Khanna, R. Mann, and J. Wang, ‖Sub-threshold circuit design with shrinking CMOS devices,‖ in IEEE Int’l Symp. Circuits and Systems, pp.

2541-2544, May 2009.

[1.7] J. A. Paradiso and T. Starner, ‖Energy scavenging for mobile and wireless electronics,‖ in IEEE Pervasive Comput., vol. 4, no.1, pp. 18-27, 2005.

[1.8] T. Vucurevich, ‖The long road to 3D integration: are we there yet?,‖ in 3D Architecture Conference, Keynote Speech, 2007.

[1.9] X. Dong and Y. Xie, ‖System-level cost analysis and design exploration for three-dimensional integrated circuits (3D ICs),‖ in Asia and South Pacific Design Automation Conf., pp. 234-241, Jan. 2009.

[2.1] K.K. Kim and Y.B Kim, ―A Novel Adaptive Design Methodology for Minimum Leakage Power Considering PVT Variations on Nanoscale VLSI Systems‖, IEEE Trans. VLSI Systems, vol. 17, no. 4, pp. 517-528, April 2009.

[2.2] R. Jacob Baker, CMOS: Circuit Design Layout, and Simulation. New York:

Wiley-Interscience, 2005.

[2.3] M. A. Farahat , F. A. Farag, and H. A. Elsimary, ―Only digital technology analog-to-digital converter circuit,‖ IEEE Trans. International Midwest Symposium on Circuits and Systems, Vol.1, pp. 178-181, Dec. 2003.

[2.4] C. K. Kim, B. S. Kong, C. G. Lee, and Y. H. Jun, ―CMOS Temperature Sensor with Ring Oscillator for Mobile DRAM Self-refresh Control,‖ IEEE Trans.

Circuit and System, pp.3094-3097, May. 2008.

[2.5] M. A. Pertijs, A. Niederkorn, M. Xu, B. McKillop, A. Bakker, and J.H. Huijsing,

―A CMOS smart temperature sensor with a 3σinaccuracy of ±0.1℃from -5℃

to125℃,‖ IEEE J. Solid-State Circuits, vol.40, no. 12, pp. 2805–2815, Dec.

2005.

[2.6] V. Székely, Cs. Márta, Zs. Kohári, and M. Rencz, ―CMOS sensors for on-line thermal monitoring of VLSI circuits,‖ IEEE Trans. VLSI Syst., vol. 5, no. 3, pp.

270–276, Sep. 1997.

[2.7] M. Sasaki, M. Ikeda, K. Asada, ―A Temperature Sensor With an Inaccuracy of -1/+0.8 ℃ Using 90-nm 1-V CMOS for Online Thermal Monitoring of VLSI Circuits,‖ IEEE Trans. Semiconductor manufacturing, vol. 21, no. 2, pp.

201–208, May 2008.

[2.8] A. Bakker and J. H. Huijsing, ―CMOS smart temperature sensor - an overview,‖

in Proc. IEEE Sensors, vol. 2, Jun. 2002, pp. 1423–1427.

[2.9] P. Chen, C. C. Chen; C. C. Tsai, W. F. Lu, ―A Time-to-Digital-Converter-Based CMOS Smart Temperature Sensor,‖ IEEE J. Solid-State Circuits, vol. 40, no. 8, PP1642-1648, August 2005.

[2.10] C. C. Chen, A. W. Liu, Y. C. Chang, P. Chen, ―An accurate CMOS delay-line-based smart temperature sensor for low-power low-cost systems,‖

Meas. Sci. Technol., vol. 17, no. 4, pp. 840–846, Apr. 2006.

[2.11] T. T. Nguyen, S. Kwansu, S. W. Kim, ―A Delay Line with Highly Linear Thermal Sensitivity for smart temperature sensor,‖ IEEE Trans. Circuit and System, pp.899-902, Aug. 2007.

[2.12] P. Chen, M. C. Shie, Z. Y. Zheng, Z. F. Zheng, C. Y. Chu, ―A Fully Digital Time-Domain Smart Temperature Sensor Realized With 140 FPGA Logic Elements‖, IEEE Trans. Circuit and system, vol. 54, no. 12, pp. 2661–2668, December 2007.

[2.13] P. Chen, K. M. Wang, Y. H. Peng, Y. S. Wang, C. C. Chen, ―A Time-Domain SAR Temperature Sensor with -0.25℃~+0.35℃ Inaccuracy for On-Chip Monitoring,‖ ESSCIRC, pp.70-73, Sept. 2008.

[2.14] M. K. Law, A. Bermak, ―A Time Domain Differential CMOS Temperature Sensor with Reduced Supply Sensitivity,‖ IEEE Trans. Circuit and system, pp.2126-2129, May 2008.

[2.15] Yi Ren, C.Wang, and H. Hong, ―An All CMOS Temperature Sensor for Thermal Monitoring of VLSI Circuits,‖ IEEE ICTD, pp. 1-5, April 2009.

[2.17] K. Woo, S. Meninger, T. Xanthopoulos, E. Crain, Ha. Dongwan, Ham. Donhee,

―Dual-DLL-based CMOS all-digital temperature sensor for microprocessor thermal monitoring,‖ IEEE ISSCC, pp. 68–69, Feb. 2009.

[2.18] M. Mondal, A. J. Ricketts, S. Kirolos, T. Ragheb, G. Link, N. Vijaykrishnan, Y. Massoud, ―Thermally Robust Clocking Schemes for 3D Integrated Circuits,‖ IEEE DATE, pp. 1–6, April 2007.

[2.19] K.K. Kim and Y.B Kim, ―A Novel Adaptive Design Methodology for Minimum Leakage Power Considering PVT Variations on Nanoscale VLSI Systems,‖ IEEE Trans. VLSI Systems, vol. 17, no. 4, pp. 517-528, April 2009.

[3.1] R.B.Staszewski, S. Vemulapalli, P. Vallur, J. Wallberg, P. T. Balsara, ―1.3V 20p Time-to-Digital Converter for Frequency Synthesis in 90-nm CMOS‖, IEEE Trans. CAS II, pp.220-224, Mar.2006.

[3.2] C. M. Hsu, M. Z. Straayer, M. H. Perrott, ―A Low-Noise, Wide-BW 3.6GHz Digital ΔΣ Fractional-N Frequency Synthesizer with a Noise-Shaping Time-to-Digital Converter and Quantization Noise Cancellation,‖ ISSCC, pp.340-617, Feb. 2008.

[3.3] K. Nose, M. Kajita, M. Mizuno, ―A 1-ps Resolution Jitter Measurement Macro Using Interpolated Jitter Oversampling,‖ IEEE J. Solid-State Circuits, pp.2911-2920, Dec. 2006.

[3.4] T. Komuro, ―ADC Architecture Using Time-to-Digital Converter,‖ IEICE vol.

J90-C, April 2007.

[3.5] P. Chen, C. .C Chen, Y. H. Peng, K. M. Wang, Y. S. Wang, ―A Time-Domain SAR Smart Temperature Sensor With Curvature Compensation and a 3σ Inaccuracy of −0.4°C∼+0.6°C Over a 0°C to 90°C Range,‖ IEEE J. Solid-State Circuits, pp.600-609, Feb. 2010.

[3.6] R. Rashidzadeh, M. Ahmadi, W. C. Miller, ―An All-Digital Self-Calibration Method for a Vernier-Based Time-to-Digital Converter,‖ IEEE Trans.

Instrumentation and Measurement, vol.59, no.2, pp.463-469, Feb. 2010.

[3.7] K. A. Bowman, B. L. Austin, J. C. Eble, X. Tang, and J. D. Meindl, ―A Physical Alpha-Power Law MOSFET Model,‖ IEEE J. Solid-State Circuits, vol. 34, no.10, pp. 1410-1414, Oct. 1999.

[4.1] P. M. Levine and G. W. Roberts, ―A high-resolution flash time-to-digital converter and calibration scheme,‖ in IEEE Int. Test Conf., pp. 1148–1157, Feb. 2004.

[4.2] V. Gutnik and A. Chandrakasan, ―On-chip picosecond time measurement,‖ in Proc. IEEE VLSI Circuits Dig. Tech. Papers, pp. 52–53, May. 2000.

[4.3] J. Rivoir, ―Fully-digital time-to-digital converter for ATE with autonomous calibration,‖ in Proc. IEEE Int. Test Conf., pp. 1–10, Oct. 2006.

[4.4] J. Rivoir, ―Statistical linearity calibration of time-to-digital converters using a free-running ring oscillator,‖ in Proc. 15th Asian Test Symp., pp. 45–50, Nov.

2006.

[4.5] P. Chen, C. .C Chen, Y. H. Peng, K. M. Wang, Y. S. Wang, ―A Time-Domain SAR Smart Temperature Sensor With Curvature Compensation and a 3σ Inaccuracy of −0.4°C∼+0.6°C Over a 0°C to 90°C Range,‖ IEEE J. Solid-State Circuits, pp.600-609, Feb. 2010.

[5.1] W. H. Cheng and B. M. Baas, ―Dynamic voltage and frequency scaling circuits with two supply voltages,‖ IEEE Asian Solid-State Circuits Conference, pp.1236-1239, Nov. 2007.

[5.2] Y. K. Ramadass and A. P. Chandrakasan, ―Voltage scalable switched capacitor DC-DC converter for ultra-low-power on-chip applications,‖ IEEE PESC, pp.

2353–2359, June 2007.

[5.3] J. Kwong, Y. Ramadass, N. Verma, M. Koesler, K. Huber, H. Moormann, A. P. Chandrakasan, ―A 65nm Sub-Vt Microcontroller with Integrated SRAM and Switched-Capacitor DC-DC Converter,‖ IEEE ISSCC, pp.318-616, Feb.

2008.

[5.4] Mengzhe Ma, ‖ Design of High Efficiency Step-Down Switched Capacitor DC/DC Converter,‖ Thesis of Oregon State University, Jun. 2003.

[5.5] J. Kwong, Y. K. Ramadass, N. Verma and A. P. Chandrakasan, ―A 65nm Sub-Vt Microcontroller With Integrated SRAM and Switched Capacitor DC-DC Converter,‖ IEEE J. Solid-State Circuits, vol.44, pp.115-126, Jan. 2009.

[5.6] A.P. Chandrakasan, D. C. Daly, D. F. Finchelstein, J. Kwong, Y. K. Ramadass, M. E. Sinangil, V. Sze, N. Verma, "Technologies for Ultradynamic Voltage Scaling," in Proceedings of the IEEE, vol.98, no.2, pp.191-214, Feb. 2010.

[5.7] M. Anis, S. Areibi, M. Mahmoud, and M. Elmasry, ―Dynamic and leakage power reduction in MTCMOS circuits using an automated efficient gate clustering technique,‖ in 39th Design Automation Conference, 2002.

Vita

PERSONAL INFORMATION

Birth Date: Nov. 18, 1985

Birth Place: Kaohsiung, TAIWAN.

E-Mail Address: dodolon.ee97g@nctu.edu.tw

EDUCATION

09/2008 – 07/2010 M.S. in Electronics Engineering, National Chiao Tung University Thesis: PVT-Aware Sensors for Micro-Watt DVFS System Design 09/2004 – 06/2008 B.S. in Electronical Engineering, National Tsing Hua University.

PUBLICATIONS

Shi-Wen Chen, Ming-Hung Chang, Wei-Chih Hsieh, and Wei Hwang, ―Fully On-Chip Temperature, Process, and Voltage Sensors‖ in IEEE Int’l Symp. Circuits and Systems, ISCAS, Jan. 2010. (Accepted)

PATENTS

1. Shi-Wen Chen, Ming-Hung Chang, Wei-Chih Hsieh, and Wei Hwang, ―Fully On-Chip Temperature, Process, and Voltage Sensors‖ US/TW Patent Pending (pending)

2. Shi-Wen Chen, Shang-Yuan Lin Ming-Hung Chang, Wei-Chih Hsieh, and Wei Hwang, ―Ultra-Low Voltage All-Digital Temperature Sensor With Adaptive Pulse Width Compensation‖ US/TW Patent Pending (submitted)

3. Shi-Wen Chen, Ming-Hung Chang, Wei-Chih Hsieh, and Wei Hwang, ―MTCMOS Switched Capacitor DC-DC Converter with Delay Line Comparator‖ US/TW Patent Pending (submitted)

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