Recommendations for Future Works

1. More HRTEM images to evidence thickness variation and interfacial layer reaction.

2. More physical analysis to understand the properties of the ozone oxide.

3. Fully fabricated MOSFET with high-κ dielectrics and various surface treatment to study the device characteristics.

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Vita

姓 名 : 張祐慈 性 別 : 女

出生日期 : 民國 68 年 10 月 19 日 籍 貫 : 台灣省苗栗縣

住 址 : 苗栗縣苗栗市北苗里蕉嶺街 17 巷 12 號 2F 學 歷 :

中原大學電子工程學系學士 (88.9–92.6) 國立交通大學電子工程研究所碩士 (92.9–94.6)

論文題目 :

高介電常數介電層在金氧半元件及動態隨機存取記憶體上之特性研究 Investigation of High-κ Dielectrics on MOS Devices and DRAM

發表論文 :

Shih-Chang Chen, Yung-Yu Chen, Yu-Tzu Chang, “Effects of Surface Treatments on the HfO2

Gate Dielectric Characteristics,” The 12th Symposium on Nano Device Technology (SNDT 2005), NDL, May 4-5, Hsinchu, Taiwan, ROC, 2005