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超薄氧化層n-MOSFET元件之低頻雜訊分析

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(1)國 立 交 通 大 學 電子工程學系. 電子研究所碩士班. 碩 士 論 文 超薄氧化層 n-MOSFET 元件之低頻雜訊分析. Analysis of Flicker Noise Mechanism in Ultra-Thin Oxide n-MOSFETs. 研 究 生:游建文 指導教授:汪大暉 博士 中華民國 九十三 年 六 月.

(2) 超薄氧化層 n-MOSFET 元件之低頻雜訊分析 Analysis of Flicker Noise Mechanism in Ultra-Thin Oxide n-MOSFETs 研 究 生 : 游建文. Student : Jian-Wen You. 指導教授 : 汪大暉 博士. Advisor : Dr. Tahui Wang. 國立交通大學 電子工程學系 電子研究所碩士班 碩士論文. A Thesis Submitted to Institute Electronics College of Electrical Engineering and Computer Science National Chiao Tung University in Partial Fulfillment of the Requirements for the Degree of Master of Science in Electronic Engineering. June 2004 Hsinchu, Taiwan, Republic of China.. 中華民國 九十三 年 六 月.

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