[PDF] Top 20 Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes

... Department of Electrical Engineering, National Chung-Cheng University, Ming-Hsiung, Chia-Yi 621, Taiwan, ROC b Department of Electronic Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC ... See full document

... characteristics of OLEDs.— Layer optimization.— The J–V of the devices with re- spect to the NiPc thickness under a forward bias are shown in ...2a. The forward J–V ... See full document

... unique properties, including higher dielectric strength, higher temperature integrity, a lower dielectric con- stant, a lower coefficient of friction, and higher mechanical strength compared to that of ... See full document

... enhance the performance of the hole-injection ...Recently, the insertion of metal oxides with a high work function and the formation of a metal-doped indium ... See full document

... to the case of blue devices, the small molecule host 26DCzppy has a much higher efficiency than the polymer host PVK blended with ...demonstrates the general superiority of small ... See full document

... Recently, white organic light-emitting diodes (OLEDs) have attracted intense attention due to their potential applications in flat-panel displays and solid-state lighting ...solid-state ... See full document

... nm of the EL spectrum became stronger 共Fig. 3兲. The difference in line shape 共or emission intensity兲 between the EL and the PL spectra might be due to electron injection which ... See full document

... that the hole-injection/transport capability increases gradually with increasing uracil ...In the case of the HR-PU-based device with fairly high content of uracil, ... See full document

... deposition. The deposition tactics were success- ful, providing a new route to access ferrocene-based organic- organometallic hybrid polymeric thin ...films. The hole- injection ... See full document

... One of the most challenging problems for solution processed polymer OWLEDs is that their transport and emissive layers need to be thicker than those of the small molecule OWLEDs in order to ... See full document

... tunable organic light emitting diodes (OLEDs) (ITO glass/naphthyl phenyl benzidine (NPB; 80 nm)/4,4  -bis(diphenylvinylenyl)-biphenyl (ADS082BE; 35 nm)/1,3-bis[2-(2,2  - ... See full document

... complexes. The device exhibits white emission with a CIE coordinate of 共x = ...and the luminance and luminous efficiency was 6389 cd/m 2 and .... The possible emission mechanisms ... See full document

... structure of 2-TNATA: WO 3 / NPB/ Alq 3 / lithium fluoride 共LiF兲/Al was deposited on the ITO substrate by resistive heating with thicknesses of 100, 10, 60, 1, and 150 nm for 2-TNATA: WO 3 , ... See full document

... and the energy level difference between them. 15 According to this model, the sensitive dependence of charge mobility on the compositional ratio is predicted and a critical ... See full document

... review on the proposals to increase the hole injection capability for DUV LEDs is essentially necessary at this ...worthy of noting that an enhanced hole concentration in ... See full document

... is the wavelength-dependent complex refractive index for the ...employ the property of axial symmetry and take the Fourier-Bessel transform to obtain an integral expression for ... See full document

... 兴 Organic light-emitting devices 共OLEDs兲 with high brightness, high efficiency, full color, and low operating volt- age have already been recognized as one of the future major flat ... See full document

... *Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan **Department of Applied Physics, National Chiayi University, Chiayi 60004, Taiwan ABSTRACT In this study, we have ... See full document

... *Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan **Department of Applied Physics, National Chiayi University, Chiayi 60004, Taiwan In this study, we have ... See full document

... reduce the type-II character of the GaAsSb-capped InAs QDs. The effect of CL thickness on the radiative recombina- tion lifetime in the GaAsSb-capped QDs has ... See full document