[PDF] Top 20 Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface
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Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface
... fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet ...power of the platform-PSS LED and modified-PSS are ... See full document
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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
... characteristics of the three fabricated ...understanding of the output power improvement, a Monte Carlo ray-tracing simulation was used to calculate the LEE of three LEDs ...simplicity of the ... See full document
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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
... on GaN templates without SiO 2 NRAs and with SiO 2 nanorods of 100, 200, and 300 nm heights were represented by LED I, LED II, LED III, and LED IV, ...confirmed by CL measurement. Figure 5 ... See full document
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Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
... array patterned sapphire substrates 共PSSs兲 with various slanted angles were fabricated by wet ...wurtzite GaN, zinc blende GaN was found on the sidewall surfaces of ...and ... See full document
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Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate
... subsequent GaN quality via its step coverage difference which prefers the single-crystalline GaN vertical ...brought by the RPD AlN nucleation layer is the reduction of thermal cycle and ... See full document
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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
... 12 By the FDTD technique, it effectively provides for studying the propagation of light in a wide variety of photonic ...the light source of the ac- tive region, the point dipole ... See full document
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Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide
... simultaneously patterned by photolithography. After removing Ni–Au layers by wet etching, the n-type layer was exposed with hole diameters of 11 μm and hole distance of 25 μm by ... See full document
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Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
... area of 335 m × 335 m. A SiO 2 layer with thickness of 300 nm is deposited onto the LED sample surface by using plasma enhanced chemical vapor deposition ...etching of SiO 2 by ... See full document
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Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes
... patterns of these three FTP-PSSs were similar to each ...number of patterns per unit area reduced in the following order: FTP-PSS-A > FTP-PSS-B > FTP-PSS- ...area of inclined region in these three ... See full document
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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
... wall of PSS. From the TEM image of AlN located at the bottom of PSS, a mixed crystallized and amorphous AlN of 25 nm on sapphire was observed, and from the TEM image of AlN ... See full document
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Improved Output Power of Nitride-Based Light-Emitting Diodes With Convex-Patterned Sapphire Substrates
... index of GaN-based compound materials around ...that of air and sapphire. Thus, most of the emitting lights cannot escape from GaN into surrounding air due to total ... See full document
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Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO(2) nanorod-array patterned sapphire template
... High-brightness GaN-based light-emitting diodes 共LEDs兲 in the UV/blue/green wavelength range have been under immense demand for a variety of applications, includ- ing large ... See full document
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Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
... introduction of GQDs on LEDs also produced a change in light ...the light out- put from LEDs without and with GQDs ...function of the injection current. Apparently, the light output ... See full document
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Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
... mance enhancement of gallium nitride (GaN)-based light-emitting diode (LED) grown on chemical wet-etching-patterned sapphire substrate (CWE-PSS) with V-Shaped pit ... See full document
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Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate
... the patterned-sapphire substrate techniques have been widely used in high-power GaN-based light- emitting diodes (LEDs), which are the most promising alternative ... See full document
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Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates
... 5. Light output power and external quantum efficiency as a function of injection current for the LS-LED, DT-LED, and ...mA) of LS-LED, DT-LED, and ...that of DT-LED and LS-LED in almost full ... See full document
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Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing
... as light-emitting diodes (LEDs), laser diodes (LDs), photo- conductive detectors, and photovoltaic detectors operating in the blue-ultraviolet (UV) range of the light ... See full document
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Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes
... processing of GaN FTLEDs associated PhC is the same as in ...the sapphire substrate. The resulting structure was then thinned down by chemical-mechanical polishing to ob- tain the GaN ... See full document
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Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
... flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire ... See full document
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Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
... University of Illinois at Urbana-Champaign, Urbana, Illinois, in ...member of the faculty at the Institute of Electro-Optical Engineering, National Chiao Tung University (NCTU), Hsinchu, ... See full document
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