[PDF] Top 20 Low-temperature grown graphene films by using molecular beam epitaxy
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Low-temperature grown graphene films by using molecular beam epitaxy
... Low-temperature grown graphene films by using molecular beam epitaxy Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Te-Huan Liu, Chun-Wei ... See full document
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Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxy
... demonstrated using molecular beam epitaxy (MBE) via the precursor of CuInSe 2 (CIS) and ZnSe to understand the growth ...characterised by using X-ray diffraction, Raman ... See full document
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Graphene films grown at low substrate temperature and the growth model by using MBE technique
... CVD grown graphene on Cu foil, the widely accepted growth model is the high-temperature decomposition of hydro- carbon gas following by adatom segregation and then graphitiza- tion ... See full document
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Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy
... thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence ...fitted ... See full document
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FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE
... In addition to the peak intensity variation as described above, slight shifts of satellite peak positions are observed for samples annealed at different temperatur[r] ... See full document
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Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy
... films grown by pulsed laser ablation and rf magnetron sputtering methods ...synthesized by chemical vapor deposition ...were grown by plasma-assisted ... See full document
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Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy
... The distribution of As precipitates in annealed LT mate- rials can be controlled either by heterostructures or by im- purity doping effects. Regarding the former, As precipitates were found to form ... See full document
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Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs
... at low pump fluence of 5 10 3 MW/cm 2 are presented in ...mentioned by Ippen et ...at low central ...band by absorbing high-energy photons, jumping to above bandgap with an excess kinetic ... See full document
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Superconductivity in an Aluminum Film Grown by Molecular Beam Epitaxy
... prepared by e gun evaporation. This is supported by the observed lower resistivity and the much lower critical magnetic field—and hence much longer coherence length—in our MBE-grown Al ...MBE- ... See full document
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Anomalous phosphorus cracker temperature-dependent photoluminescence spectra of InGaP grown by solid source molecular beam epitaxy
... samples grown with different substrate tilt angles and different phosphorus cracker ...that using tilted substrates could reduce the or- dering effect in InGaP grown by SSMBE, but the change ... See full document
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Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
... analyzed using XRD with CuK ...studied by TEM and ...prepared using focused ion beam (FIB) milling ...and temperature-dependent -PL emission spectra of GaN nanorods were measured ... See full document
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Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
... attempted using gas source molecular beam ...growth temperature is lower than 420°C, Tl3P droplets were found on the InP ...detected by secondary ion mass spectroscopy. By ... See full document
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Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy
... periods grown by molecular beam epitaxy at low substrate temperatures were studied by transmission electron ...following grown undoped ... See full document
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Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy
... QDs grown in a ZnSe matrix are ...The temperature-dependent PL spectra reveal a strong redshift in energy as the temperature is increased, the narrowing of the line at low temperature, ... See full document
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Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
... film grown by ...revealed by low- temperature magnetoresistance measurement showed its unusual dephasing ...aluminum films could achieve the two-dimensional limit of a ... See full document
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Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
... relatively low T, the magnitude of the momentum of phonons is too small to induce the size effect such that the Umklapp scattering process occurring in the interior may possibly be dominant over that occurring at ... See full document
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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
... Figure 2 shows the low temperature 共4 K兲 PL spectra of the various MQW samples. As the Sb composition increases, the peak wavelength exhibits a redshift in the range from 3.4 to 4.5 m and the peak ... See full document
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1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
... been grown on GaAs (100) substrate by using solid source molecular beam ...a low threshold current density of 300 A=cm 2 ... See full document
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Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
... film grown by plasma- assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) ...the temperature ... See full document
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Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy
... GaAsSbN grown by gas-source molecular-beam ...growth temperature ranging from 420 to 450 1C. The increment in Sb beam flux hardly changes the N ...successfully grown ... See full document
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