[PDF] Top 20 High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
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High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
... device performance on laser energy densities for the GBLC NW TFTs is investigated and compared with the conv-ELC and SPC ...each laser irradiation condition to evaluate the device-to- device ... See full document
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Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel
... and polycrystalline-silicon (poly-Si) thin-film transistor (TFT) has been demonstrated to achieve the integration of memory and transistor ...without high carrier mobility might ... See full document
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Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
... position-manipulated silicon grains are essential to high-performance and good uniformity ...Low-temperature polycrystalline silicon thin-film tran- sistors 共TFTs兲 have ... See full document
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High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel
... and high on/off current ratio of 1:1 10 8 , whereas the conventional ones show a field-effect mobility of 125 cm 2 V 1 s 1 , subthreshold swing of ...superior performance of the prepatterned RC TFTs is ... See full document
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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... INTRODUCTION Excimer-laser-annealed polycrystalline silicon thin film transistors 共poly-Si TFTs兲 have been extensively investigated due to their potential for integration ... See full document
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High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
... Laser Crystallization Chun-Chien Tsai, Hsu-Hsin Chen, Bo-Ting Chen, and Huang-Chung Cheng Abstract—In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon ... See full document
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High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure
... the silicon grain structures on applied laser shot number is also ...layer with the BG structure after laser irradiation shot of 1 and 20 times, corresponding- ly, for the gate length ... See full document
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High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
... lateral grain growth mechanism using plateau structure of a-Si thin film with excimer laser ...the excimer laser irradiation is applied on the a-Si thin film, the ... See full document
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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
... of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain ... See full document
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High-performance short-channel double-gate low-temperature polysilicon thin-film transistors using excimer laser crystallization
... letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been ... See full document
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Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
... Fluorine; Excimer laser crystallization ...manufacturing high performance poly-Si TFTs, since the maximum process temperature is restricted less than 600 ...from grain boundaries ... See full document
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Phase field modeling of excimer laser crystallization of thin silicon films on amorphous substrates
... the high absorption coefficient of silicon at the spe- cific wavelengths of excimer lasers, both melting and reso- lidification can proceed extremely rapidly so that the manu- facturing of ... See full document
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High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
... a high performance TFT with a nanowire structure and multilayer ONO gate ...TFT with ONO gate dielectric has better electrical properties compared to the standard TFT with a TEOS ... See full document
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Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer
... of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer Ko-Hui Lee 1 , Hsing-Hui Hsu 1 , Horng-Chih Lin 1;2 , and Tiao-Yuan Huang 1 1 ... See full document
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Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
... devices with L = 1 l m. It is seen that the performance is better for the MIUC ...of crystallization from opposite sides confront with each other at the central region of the ...on-state ... See full document
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Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
... the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors Bau-Ming Wang a , Tzu-Ming Yang a , ... See full document
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High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
... Polycrystalline silicon thin-film transistors 共poly-Si TFTs 兲 have attracted considerable attention because they can be used in active-matrix liquid crystal displays, since they perform ... See full document
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High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure
... the silicon dangling bonds originating from the deep trap states have energy states near the middle of the silicon bandgap, greatly affecting the threshold voltage and subthreshold ...film with the ... See full document
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Aligned polycrystalline silicon array thin film by XeCl excimer laser annealing for AMOLED displays
... 摘要: Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting dio[r] ... See full document
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Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
... Fig. 7. The subthreshold swing variation verse stress time for standard poly-Si TFTs and F-ions-implanted poly-Si TFTs for dosage of 5 2 10 cm . ELC processes, which effectively reduces the trap state density to enhance ... See full document
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