[PDF] Top 20 1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection

... A 1.3 mm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been ... See full document

... long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD ...epitaxy with fully doped distributed Bragg ...and with light injection are ... See full document

... micro- cavity optical length is elongated to to sustain at least three normalized squared electric-field antinode positions inside the ...layers with digital interface grading to help reduce each VCSELs ... See full document

... of quantum dot vertical-cavity surface-emitting lasers (QD VCSEL) without and with light ...the 1.3 μm optical communication ...by light ... See full document

... May 3, 2012; published online August 1, 2012 Abstract—This study investigates, for the first time, static and dynamic wavelength switching characteristics of the ...μm quantumdot ... See full document

... b Light-current characteristics Experiment and results: Fig. 1a shows the schematic diagram of the monolithically singlemode QD ...package with a built-in ...by laser welding technique. Fig. ... See full document

... cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser ...multiple quantum well active layer embedded in a GaN hybrid microcavity of 5␭ ... See full document

... InGaN; quantum dot; vertical-cavity surface-emitting laser; wide-gap semiconductor INTRODUCTION Semiconductor lasers have attracted much attention since their invention in ... See full document

... VCSEL with external light injection is as high as ...KEYWORDS: quantum dots, vertical-cavity surface-emitting laser, relative intensity noise ... See full document

... undoped 1λ cavity contains three InGaAs submono- layer QD layers, separated by GaAs barrier ...(TO)-Can laser package with a built-in ...by laser welding, as displayed in ...and ... See full document

... crystal with a single-point defect in the center were defined within the p-contact ring us- ing photolithography, and were etched through the p-type DBR using ...the injection current to flow through the ... See full document

... of injection currents we applied, consistent with the previous discussion that the synthesized ZnO NRs creates better index matching for photon escaping in a manner correlated with a reduc- tion of ... See full document

... For the development of semiconductor lasers, lasing action operated by optical pumping is the first step. The experimental results obtained from optically pumped VCSELs can be used to estimate the threshold condition of ... See full document

... As quantum wells clad in spacers to form a single-wavelength-long ...versus injection current characteristic of oxide-confined VCSEL is shown in ...Fig. 1, which reveals significantthermal roll-over ... See full document

... As quantum wells, which are embedded in the spacer layers to form a cavity with a thickness of one ...layers with different aluminum contents and graded interfaces in terms of material ...layer ... See full document

... Figs. 3a and b, respectively. Smooth Gaussian peaks with strong luminescence are observed for both ...of 1.3 mm ...and 1.054 eV, 6.371.1  10
4 eV/K and 4857124 K for the ... See full document

... InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room- temperature lasing emissions at ...beam with narrow divergence ... See full document

... The cavity mode and the gain mode offset is determined to be ...VCSELs with coplanar wave-guide probe ...began with the formation of cylindrical mesas with a diameter of 30 µm by ... See full document

... Keywords photo-detector; optical; ferroelectric; photo-voltage; thin-film 1. Introduction Photovoltages as large as several kilovolts have been previously measured in poled ferroelectric materials under ... See full document

... A red-shift of 20 nm is observed. For In Ga As Sb, the full-width at half-maximum (FWHM) of the PL emission peak from In Ga As Sb is larger and the PL intensity is slightly lower. The red-shift of InGaAs:Sb can be ... See full document