[PDF] Top 20 Voltage-tunable two-color quantum-dot infrared photodetectors
Has 3619 "Voltage-tunable two-color quantum-dot infrared photodetectors" found on our website. Below are the top 20 most common "Voltage-tunable two-color quantum-dot infrared photodetectors".
Voltage-tunable two-color quantum-dot infrared photodetectors
... Quantum-dot infrared photodetectors 共QDIPs兲 have been widely investigated in recent ...ventional quantum-well infrared photodetectors 共QWIPs兲, advantages such as ... See full document
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Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing
... transform infrared spectrometer and the absolute responsivity was calibrated with 1000 °C blackbody radiation with a Ge wafer to filter out photons with wavelength shorter than 2 ...3(a). Two well separated ... See full document
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Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection
... According to this result, this device is advantageous for the fabrica- tion of grating-less QDIP devices. 4. Conclusions In the conclusion, a two-terminal QDIP with stacked 5-period InAs/GaAs and InGaAs-capped ... See full document
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Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
... III. R ESULTS AND D ISCUSSION Normalized 10 K spectral responses of devices A and B op- erated at 2.0 V are shown in Fig. 1(a). As show in the figure, peak responses of 6 and 7.9 m are observed for Samples A and B, ... See full document
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Temperature dependent responsivity of quantum dot infrared photodetectors
... and voltage, the carrier number inside the QD ...idea, two QDIPS with identical device structure but dif- ferent QD doping density was ...the two samples at 77 ... See full document
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Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors
... The total field is dominated by the QD charge field which is a func- tion of voltage and temperature. With the average charge number calculated from the current gain, the tunneling probability was cal- culated and ... See full document
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InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
... small dot while leaves the tip of the large dots ...more voltage to escape from the bound ex- cited ...[11]. Two ex- tremely tuning spectra are shown in ... See full document
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Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
... photocurrent ratios obtained via photocurrents measured under different polarized lights divided by the photocurrent under p-mode light at applied voltage 1.8 V of Devices A and B are shown in Fig. 4(b). Devices A ... See full document
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The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors
... high-temperature operation infrared photodetectors in the LWIR range. In conclusion, a 10-period QD/QW MMIP is proposed in this pa- per. Responses at 4.8/12.7 and 5.3/10.3 l m at positive and negative ... See full document
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Broadband Quantum-Dot Infrared Photodetector
... with two separate QD regions with different detection wavelengths, the result would be a voltage-tunable two-color QDIP as discussed elsewhere ... See full document
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δ-Doped MOS Ge/Si quantum dot/well infrared photodetector
... as photodetectors at the inversion ...the quantum dot infrared photodetectors (QDIPs) and quantum well infrared detectors ...the quantum dot and ... See full document
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Vertically Coupled Quantum-Dot Infrared Photodetectors
... Fig. 3. Noise current gain of samples A and B as a function of the average electric field at 77 K. FWHM which mainly comes from the size nonuniformity of the QDs in sample A. Although the QDs have three-dimensional ... See full document
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Broadband SiGe/Si quantum dot infrared photodetectors
... SiGe dot with shorter annealing time after formation has a higher Ge concentration 共⬃60%兲 as compared to the bottom SiGe dot 共⬃40%兲, 7,8 which suffers longer annealing time after ... See full document
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MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
... The simple metal-insulator-semiconductor (MIS) structure with tunneling insulator can make the GeISi QDIP compatible with Si ULSl process, and make it possible to have conven[r] ... See full document
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Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors
... 546 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 Fig. 4. The 20 K PL spectrum for a multilayer Ge–Si quantum-dot structure. Si bandgap is 1:17 eV at 20 K, and the QD barrier is 0:4 eV. where ... See full document
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Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
... InAs–GaAs Quantum-Dot Infrared Photodetectors Shu-Ting Chou, Member, IEEE, Shih-Yen Lin, Member, IEEE, Chi-Che Tseng, Student Member, IEEE, Yi-Hao Chen, Cheng-Nan Chen, and Meng-Chyi Wu, ... See full document
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Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
... Fig. 3. Current gain curves of the two samples at 100 K and 200 K. B are fully covered. When positively biased, the photogener- ated electrons have to overcome the potential barrier of AlGaAs and pass through the ... See full document
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Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
... 10.1063/1.1347006兴 Quantum-well infrared photodetectors 共QWIPs兲 utilizing an intersubband transition have been extensively investigated over the last ...the quantum-well ...the quantum ... See full document
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Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
... 共InGa兲As quantum dots 共QDs兲 on GaAs substrates for practical applications and fun- damental research have been widely investigated in recent ...and quantum-dot infrared photodetectors ... See full document
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Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror
... optimized quantum effi- ...with two mirrors, a top GMR mirror of Ge subwavelength grating laid on a SiO x layer and a bottom DBR mirror of GaAs/AlO x ... See full document
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