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[PDF] Top 20 Voltage-tunable two-color quantum-dot infrared photodetectors

Has 3619 "Voltage-tunable two-color quantum-dot infrared photodetectors" found on our website. Below are the top 20 most common "Voltage-tunable two-color quantum-dot infrared photodetectors".

Voltage-tunable two-color quantum-dot infrared photodetectors

Voltage-tunable two-color quantum-dot infrared photodetectors

... Quantum-dot infrared photodetectors 共QDIPs兲 have been widely investigated in recent ...ventional quantum-well infrared photodetectors 共QWIPs兲, advantages such as ... See full document

4

Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing

Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing

... transform infrared spectrometer and the absolute responsivity was calibrated with 1000 °C blackbody radiation with a Ge wafer to filter out photons with wavelength shorter than 2 ...3(a). Two well separated ... See full document

6

Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection

Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection

... According to this result, this device is advantageous for the fabrica- tion of grating-less QDIP devices. 4. Conclusions In the conclusion, a two-terminal QDIP with stacked 5-period InAs/GaAs and InGaAs-capped ... See full document

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Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

... III. R ESULTS AND D ISCUSSION Normalized 10 K spectral responses of devices A and B op- erated at 2.0 V are shown in Fig. 1(a). As show in the figure, peak responses of 6 and 7.9 m are observed for Samples A and B, ... See full document

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Temperature dependent responsivity of quantum dot infrared photodetectors

Temperature dependent responsivity of quantum dot infrared photodetectors

... and voltage, the carrier number inside the QD ...idea, two QDIPS with identical device structure but dif- ferent QD doping density was ...the two samples at 77 ... See full document

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Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors

Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors

... The total field is dominated by the QD charge field which is a func- tion of voltage and temperature. With the average charge number calculated from the current gain, the tunneling probability was cal- culated and ... See full document

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InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

... small dot while leaves the tip of the large dots ...more voltage to escape from the bound ex- cited ...[11]. Two ex- tremely tuning spectra are shown in ... See full document

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Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots

Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots

... photocurrent ratios obtained via photocurrents measured under different polarized lights divided by the photocurrent under p-mode light at applied voltage 1.8 V of Devices A and B are shown in Fig. 4(b). Devices A ... See full document

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The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors

The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors

... high-temperature operation infrared photodetectors in the LWIR range. In conclusion, a 10-period QD/QW MMIP is proposed in this pa- per. Responses at 4.8/12.7 and 5.3/10.3 l m at positive and negative ... See full document

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Broadband Quantum-Dot Infrared Photodetector

Broadband Quantum-Dot Infrared Photodetector

... with two separate QD regions with different detection wavelengths, the result would be a voltage-tunable two-color QDIP as discussed elsewhere ... See full document

3

δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

... as photodetectors at the inversion ...the quantum dot infrared photodetectors (QDIPs) and quantum well infrared detectors ...the quantum dot and ... See full document

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Vertically Coupled Quantum-Dot Infrared Photodetectors

Vertically Coupled Quantum-Dot Infrared Photodetectors

... Fig. 3. Noise current gain of samples A and B as a function of the average electric field at 77 K. FWHM which mainly comes from the size nonuniformity of the QDs in sample A. Although the QDs have three-dimensional ... See full document

3

Broadband SiGe/Si quantum dot infrared photodetectors

Broadband SiGe/Si quantum dot infrared photodetectors

... SiGe dot with shorter annealing time after formation has a higher Ge concentration 共⬃60%兲 as compared to the bottom SiGe dot 共⬃40%兲, 7,8 which suffers longer annealing time after ... See full document

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MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses

MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses

... The simple metal-insulator-semiconductor (MIS) structure with tunneling insulator can make the GeISi QDIP compatible with Si ULSl process, and make it possible to have conven[r] ... See full document

2

Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors

Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors

... 546 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 Fig. 4. The 20 K PL spectrum for a multilayer Ge–Si quantum-dot structure. Si bandgap is 1:17 eV at 20 K, and the QD barrier is 0:4 eV. where ... See full document

3

Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors

Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors

... InAs–GaAs Quantum-Dot Infrared Photodetectors Shu-Ting Chou, Member, IEEE, Shih-Yen Lin, Member, IEEE, Chi-Che Tseng, Student Member, IEEE, Yi-Hao Chen, Cheng-Nan Chen, and Meng-Chyi Wu, ... See full document

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Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

... Fig. 3. Current gain curves of the two samples at 100 K and 200 K. B are fully covered. When positively biased, the photogener- ated electrons have to overcome the potential barrier of AlGaAs and pass through the ... See full document

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Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

... 10.1063/1.1347006兴 Quantum-well infrared photodetectors 共QWIPs兲 utilizing an intersubband transition have been extensively investigated over the last ...the quantum-well ...the quantum ... See full document

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Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages

Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages

... 共InGa兲As quantum dots 共QDs兲 on GaAs substrates for practical applications and fun- damental research have been widely investigated in recent ...and quantum-dot infrared photodetectors ... See full document

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Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror

Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror

... optimized quantum effi- ...with two mirrors, a top GMR mirror of Ge subwavelength grating laid on a SiO x layer and a bottom DBR mirror of GaAs/AlO x ... See full document

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