Chapter 9 Conclusions and Recommendations for Future Works
9.2 Recommendations for Future Works
1. More HRTEM images to evidence thickness variation and interfacial layer reaction.
2. Further reduced surface roughness to promote charge-to-breakdown value larger than 10 C/cm2.
3. Alternative high dielectric constant candidates, including AlON, HfSiO and HfSiON, etc.
4. Fully fabricated stacked-gate flash memories with high-κ inter-poly dielectrics and tunnel dielectrics to study the device characteristics, including program/erase speed, retention time and charge loss mechanism.
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