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Growth of GaAs Solar Cells on Ge Substrates by Metal Organic Vapor Phase Epitaxy 蔡光岳、蕭宏彬

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Growth of GaAs Solar Cells on Ge Substrates by Metal Organic Vapor Phase Epitaxy 蔡光岳、蕭宏彬

E-mail: [email protected]

ABSTRACT

The thesis was devoted to the growth of high quality GaAs Solar Cells on Ge substrates using metal-organic vapor-phase epitaxy (MOVPE) technique. According to published references, a two-step growth process must be adopted to grow high quality GaAs epi-layers on Ge substrates. The two-step growth process needs a nucleation layer grown at lower temperature. In this work, the conditions of the nucleation layer, including growth temperature and thickness, were varied to study the effect on the GaAs

epi-layers’ quality. First, GaAs epi-layers were grown on Ge substrates with various nucleation layers. The surface flatness of GaAs epi-layers was examined with atomic force microscopy (AFM). The crystallization of GaAs epi-layers was examined with

high-resolution x-ray diffractometer (HR-XRD). Finally, the samples of GaAs solar cells grown on Ge substrates with various nucleation layers were prepared to evaluate the device performance.

Keywords : MOVPE ; GaAs ; Ge ; Nucleation layer ; GaAs Solar Cell Table of Contents

封面內頁 簽名頁 授權書......................... iii 中文摘要............

............ iv 英文摘要........................ v 誌謝.........

................. vi 目錄.......................... vii 圖目錄..

....................... ix 表目錄.........................xi 第一章 序論 1.1 前言.................... 1 1.2 動機...................

. 2 1.3太陽電池原理................. 4 1.4同異質磊晶技術................ 10 1.4.1異質磊晶................ 10 1.4.2 成核層................. 12 第二章  MOVPE系統與沉積機制介紹 2.1有機金屬化學氣相沉積法............ 13 2.2 MOVPE系統簡介....

........... 13 2.2.1反應腔................. 14 2.2.2反應源及氣體控制.......

..... 16 2.3沈積機制................... 18 第三章 成長條件設計與元件製程 3.1成長條件.

.................20 3.2量測系統介紹................21 3.2.1 HR-XDR 高解析X 光繞射儀.......21 3.2.2 AFM 原子力顯微鏡............ 23 3.2.3太陽光模擬器........

...... 25 3.3製作元件流程................ 28 第四章 結果與討論 4.1表面粗糙度與晶膜半高寬

...........30 4.2成長砷化鎵太陽能電池............38 第五章 結論...........

...........44 參考文獻........................45 REFERENCES

[1] Future Pundit Boeing Spectrolab Achieves 40% Solar Cell Efficiency December 11,2006 [2] M.B.Chenet.al.Technical Digest of the international PVSEC-14, Bangkok, Thaioland, 2004 [3] B.Galiana,K.Volz,I.Rey-stolle,W.Stolz and C.Algora Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on pp.870~810 [4] 莊嘉琛, " 太陽能工程(太陽電池篇), " 全華科技圖書股份有限 公司, pp. 135-137(2001).

[5] S. O. Kasap, " Optoelectronics and photonics principles andpractices, " Prentice Hall, pp. 286-305(2003).

[6] Electronic Thin Film Science For Electronic Engineersand Materials Scientists, edited by K. N. Tu, J. W. Mayer, and L. C. Feldman, (1992).

[7] X光材料分析技術與應用專題 作者:林麗娟 [8] 原子力顯微鏡(Atomic Force Microscopy)成像原理與中文簡易操作手冊 編輯者:陳哲 雄 林俊勳 林紋瑞 吳靖宙 [9] Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on Volume 1, Issue , May 2006 Page(s):807–810 [10] Guy Brammertz*, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van Steenbergen,Gustaaf Borghs, and Matty Caymax Journal of Crystal Growth Volume 297, Issue 1, 15 December 2006, Pages 204-210

參考文獻

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