AlInGaP LED Stress Sensor and It’s Application on Package 沈柏仲、張國雄
E-mail: 9901181@mail.dyu.edu.tw
ABSTRACT
Piezo-resistors act as a stress sensors were made by dry etching through AlGaInP/GaAs LED epi-wafer. Three meander shaped stress sensors along [110] and [ 10] were made on P layers. Their resistances were approximately 40KΩ、140KΩ and 250KΩ respectively. External forces were exerted on a sensor strip. Four-point bending method was used to calibrate the resistance changes under both tensile stress and compressive stress. It was found that the resistance of stress sensor along [110] has an increment of 0.76-1.54% under tensile stress. Larger the tensile stress higher the resistance change. By contrast, the resistance of those stress sensors along [110] has the decrement of -1.12%至-0.59% under compressive stress. Again, larger the compressive stress higher the resistance change. After making a detailed calibration, stress sensor was mounted into SMD packaging. The stress type and quantity inside the SMD packaging is successfully measured.
Keywords : piezoresistor ; four-point bending ; stress sensor
Table of Contents
封面內頁 簽名頁 授權書．．．．．．．．．．．．．．．．．．．．．．．．．iii 中文摘要．．．．．．．．．．．．
．．．．．．．．．．．．iv 英文摘要．．．．．．．．．．．．．．．．．．．．．．．．v 致謝．．．．．．．．．
．．．．．．．．．．．．．．．．．vi 目錄．．．．．．．．．．．．．．．．．．．．．．．．．．vii 圖目錄．．．
．．．．．．．．．．．．．．．．．．．．．．ix 表目錄．．．．．．．．．．．．．．．．．．．．．．．．．xi 第 一章 前言．．．．．．．．．．．．．．．．．．．．．．1 1.1 LED的歷史．．．．．．．．．．．．．．．．1 1.2 LED的重要性．．．．．．．．．．．．．．．2 1.3 LED的封裝目的．．．．．．．．．．．．．．2 1.4 LED的封裝方 式．．．．．．．．．．．．．．3 1.5 LED的封裝流程．．．．．．．．．．．．．．4 1.6 銲線製程中影響應力的因素
．．．．．．．．．．5 1.7封膠製程中影響應力的因素．．．．．．．．．．5 1.8研究的動機與目的．．．．．．．．．
．．．．．5 1.9前人實驗的方法．．．．．．．．．．．．．．．6 第二章 原理．．．．．．．．．．．．．．．．．．
．．．．．8 2.1應力解說．．．．．．．．．．．．．．．．．．．8 2.2應變．．．．．．．．．．．．．．．．．．．
．10 2.3四點彎曲量測法．．．．．．．．．．．．．．．11 2.4壓電阻的定義及原理．．．．．．．．．．．．．12 2.5 壓電阻係數．．．．．．．．．．．．．．．．．12 2.6 壓阻應力萃取．．．．．．．．．．．．．．．14 第三章 實驗元 件介紹及儀器設計．．．．．．．．．．．．．16 3.1 應力感測器晶片結構．．．．．．．．．．．．16 3.2 光罩的設計
．．．．．．．．．．．．．．．．17 3.3 應力感測器的製作流程．．．．．．．．．．．19 3.4 應力感測器的尺寸．．
．．．．．．．．．．．20 3.5 4155A介紹．．．．．．．．．．．．．．．．21 3.6 四點彎曲量測法儀器設計．．．．．
．．．．．23 第四章 實驗流程．．．．．．．．．．．．．．．．．．．．26 4.1 量測的方法．．．．．．．．．．．．
．．．．．26 4.2 量測注意事項．．．．．．．．．．．．．．．．27 4.3 實際封裝．．．．．．．．．．．．．．．．
．．27 4.4 擴張量測實驗結果．．．．．．．．．．．．．．28 4.5 壓縮量測實驗結果．．．．．．．．．．．．．．31 4.6 SMD封裝的結果．．．．．．．．．．．．．33 4.7 實驗結果概說．．．．．．．．．．．．．．．．35 第五章 結論
．．．．．．．．．．．．．．．．．．．．．．36 參考資料．．．．．．．．．．．．．．．．．．．．．．．．38 REFERENCES
【1】蔡貽宗。銅晶片銲線製程支應力分析，國立中正大學研究所碩士論文。 【2】孫玉琪。矽壓阻式微流量感測器之製作，國立清華 大學研究所碩士論文。 【3】陳耀星。以壓電阻元件量測電子構裝熱應力，中正理工學院研究所碩士論文。 【4】許志豪。壓阻式微流 量感測器之設計、製作與模擬探討，國立中正大學研究所碩士論文。 【5】羅正忠、李嘉平、鄭湘原譯，半導體工程－先進製程與模擬
。台北市:高立。 【6】吳偉民。微加速度計強韌控制之探討，國立中山大學研究所碩士論文。 【7】
http:tw.myblog.yahoo.comjw!4aIffbucFQPrGEEv9Es- articlemid=140.htm LED封裝流程圖 【8】 http:www.full-sun.com.twnews~04.htm.htm 現有LED封裝 缺點 【9】A. J. Brook, S. J. Bending, J. Pinto, A. Oral, D. Ritchie, H. Beere, M. Henini, A. Springthorpe. Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy. Applied Physics Letters. 82(20). 3538-3540. 【10】Ty Fayfield, Vernon Scott, W.P. Robbins.PIEZOELECTRIC THIN FILM SIRESS SENSORS FOR METALFORMING OPERATIONS. University of
Minnesota.Minneapolis 【11】Xiong Jijun, Wang Jian, Zhang Wendong, Xue Chenyang, Zhang Binzhen, Hu Jie.Piezoresistive effect in
GaAs/InxGa1_xAs/AlAs resonant tunneling diodes for application in micromechanical sensors. Microelectronics. 39. 771–776 【12】Ben-Je Lwo, Shen-Yu Wu. Calibrate Piezoresistance Stress Sensors Through the Assembled Structure. National Defense university, Tao-Yuan. 【13
】Tung-Sheng Chen, Yu-Ren Huang, Yuan-Hsing Wang, Yu-Ling Lin, Chi-Yuan Lee, Ben-Je Lwo, Chung-Hsing Kao, Su Lu. Application of Microelectronic Devices For Package -Induced Stress Measurement. National Defense university, Tao-Yuan. 【14】Yong Liu, Scott Irving, Timwah Luk. Thermosonic Wire Bonding Process Simulation and Bond Pad Over Active Stress Analysis. Electronics Packaging Manufacturing, 31(1). 61-71. 【15】George E. Mase. Schaum’s Outline of Theory and Problems of Continuum Mechanics. United States: McGraw -Hill. 【16
】Beng Teck Ng, Charles Lee. Optimization of Gold Wire Bonding on Electroless Nickel Immersion Gold for High Temperature Applications.
Electronics Packaging Technology Conference 2006, Singapore. 【17】Fengshun Wu, Yanxiang Hu, Yiping Wu, Bing An, Jinsong Zhang. A Study of Thermosonic Gold Wire Bonding onto Silver Plated Copper Pad. Electronic Packaging Technology. 10 (1) .372-376. 【18】Jeffrey C.
Suhling, and Richard C. Jaeger. Silicon Piezoresistive Stress Sensors and Their Application in Electronic Packaging. IEEE SENSORS JOURNAL, VOL. 1. 【19】Y. W. Hsua, S. S. Lu, P. Z. Chang. Piezoresistive response induced by piezoelectric charges in n-type GaAs mesa resistors for application in stress transducers. Journal of Applied Physics. 85(1). 333-340. 【20】S. Chaparala, F. Andros1, W. Infantolino1, B. Sammakia. A New Technique for Calibrating Piezoresistive Stress Sensor Chips. Paper presented at the meeting of Thermal and Thermomechanical Phenomena in Electronic Systems, USA.
