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[PDF] Top 20 Characterization and modeling of metal-film microbolometer

Has 10000 "Characterization and modeling of metal-film microbolometer" found on our website. Below are the top 20 most common "Characterization and modeling of metal-film microbolometer".

Characterization and modeling of metal-film microbolometer

Characterization and modeling of metal-film microbolometer

... Furthermore, an effective method of ambient temperature compensation, proposed previously by our laboratory, is demonstrated both experimentally and by simulation using [r] ... See full document

9

Characterization and SPICE Modeling of High Voltage LDMOS

Characterization and SPICE Modeling of High Voltage LDMOS

... 2 Characterization of LDMOS and MESDRIFT ...characteristics of LDMOS including the quasi-saturation effect and impact ionization are presented and impact ionization mechanism ... See full document

74

Characterization and Modeling of on-chip spiral inductors for Si RFICs

Characterization and Modeling of on-chip spiral inductors for Si RFICs

... Manager of the Device ...Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ...Director of Device and Reliability ...Manager of Mixed-Signal and RF ... See full document

11

Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrate

Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrate

... removal of contaminants. For metallic contaminants, the degree of contamination depends on the thermodynamics of surface state and the cleaning ...type and the cleaning solution ... See full document

10

Characterization and Modeling of on-chip inductor substrate coupling effect

Characterization and Modeling of on-chip inductor substrate coupling effect

... Moreover, a macro model is presented for modeling quality factor and inductance of on-chip spiral inductor and associated neighboring inductor's coupling noise effect..[r] ... See full document

4

Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist

Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist

... state and solution pH con- ...Mn and Zn in cleaning ...SPM, and BOE, are commonly applied in wafer ...Mixtures of HF and NH 4 F, known as BOE, are used for etching oxide film to ... See full document

6

Characterization and modeling of out-diffusion of cesium, manganese and zinc impurities from deep ultraviolet photoresist

Characterization and modeling of out-diffusion of cesium, manganese and zinc impurities from deep ultraviolet photoresist

... Type II is H20 or solvent evaporation dominates, while the effect of impurity migration is not significant; therefore, the diffusion ratio decreases as temperature goes up.. In the.[r] ... See full document

9

Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

... number of stress created trapped charges in a device and Dv t denotes a single trapped charge caused V t ...dispersion of Dv t and the other is fluctuations in number of traps N in ... See full document

4

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

... EDT of electrons from n polysilicon to underlying n-type drain extension has shown its tremendous impact on the drain leakage and gate ...istics and its tunneling area extracted indeed falls within ... See full document

6

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

... pulses and the corresponding pulse waveforms. A read pulse of −2 V was applied to measure the cell conductance after every potentiating and depressing ...steady-state and transient ...effects, ... See full document

9

Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling

Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling

... diameter of nanorods is by no means uniform along the vertical ...mixture of crystalline Si and voids with varying porosity ...tropy of the nanorods was described by modeling the direc- ... See full document

4

Statistical Characterization and Modeling of the Temporal Evolutions of Delta V-t Distribution in NBTI Recovery in Nanometer MOSFETs

Statistical Characterization and Modeling of the Temporal Evolutions of Delta V-t Distribution in NBTI Recovery in Nanometer MOSFETs

... ODELING OF A R ECOVERY ΔV t D ISTRIBUTION We measure threshold voltage shifts in a large number of devices at different recovery ...number of emitted holes and a total threshold voltage shift ... See full document

7

Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates

Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates

... charge of an electron, n t is the effective areal density of defects located in the channel or at the oxide/channel inter- ...amount of defects contained in the channel is proportional to the channel ... See full document

7

Biosensing of biophysical characterization by metal-aluminum nitride-metal capacit

Biosensing of biophysical characterization by metal-aluminum nitride-metal capacit

... features and capacitance of AlN films following cell culture were detected via leakage current density and biocompatibility ...failure of the capacitors produced slit-like microvoids to form ... See full document

1

Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor

Biosensing of biophysical characterization by metal-aluminum nitride-metal capacitor

... stress of each layer of the specimens was determined by considering only the two adjacent layers as a thin film and a substrate, ...results of the calculation established that the ... See full document

6

The Characterization of Chitosan-hyaluronan-metal Nanocomposites

The Characterization of Chitosan-hyaluronan-metal Nanocomposites

... structure and properties of composite thin films consisting of nanosized metal particles dispersed in polymeric matrices has been the subject of intense research both for fundamental ... See full document

4

Modeling spatial uncertainty of heavy metal content in soil by conditional Latin hypercube sampling and geostatistical simulation

Modeling spatial uncertainty of heavy metal content in soil by conditional Latin hypercube sampling and geostatistical simulation

... probe autocorrelation was observed, which is usually as- cribed to the so-called ‘‘TPA peak.’’ 12 The TPA peak mag- nitude was linearly proportional to the pump intensity within our experimental range. Assuming the ... See full document

4

MEMS fabrication based on nickel-nanocomposite: film deposition and characterization

MEMS fabrication based on nickel-nanocomposite: film deposition and characterization

... portion of a fabricated and released ...4(a) and (b) represent the surface elemental composition of the plated ...difference, and disclose the encapsulated cordierite ...nucleation ... See full document

12

The properties and analysis of the distribution and characterization of the states in diamond thin film bandgap 陳正哲、李世鴻

The properties and analysis of the distribution and characterization of the states in diamond thin film bandgap 陳正哲、李世鴻

... Badzian, and R. Messier, "The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film", IEEE Electron Devices Letters, ... See full document

2

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

... Current density versus anodization time at 100 V anodization voltage showing the current density decreases as the anodization time increases at various pH values.. applie[r] ... See full document

7

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