[PDF] Top 20 Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
... The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned ... See full document
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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate
... the GaN/sapphire and GaN/air void interfaces were ...lots of the downward photons still suffer from to- tal ...from GaN to sap- phire), the light will experience total ... See full document
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Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
... 14.2% and 16.4% for conventional and PSS LEDs, ...product of internal quantum efficiency and light extraction efficiency; and it is also well accepted that the ... See full document
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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
... Results and discussion Based on the experimental results of Raman and excita- tion current-dependent EL measurement, it can be de- termined that the growths of the ... See full document
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Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates
... 兲 of light from the active region can escape from the top and bottom of the device, where n denotes the refrac- tive index of a semiconductor ...though GaN has a lower refractive ... See full document
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Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
... InGaN/GaN light emitting diodes (LEDs) have become the most widely used optoelectronic devices for solid-state ...range of emitting wavelengths from ultra- violet (UV) to near infrared (NIR) ... See full document
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Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template
... CPSS-LED and SiO -LED than ...better light extraction efficiency than ...index of SiO and sapphire are ...1.4 and 1.7, respectively, the critical angles of occurring total ... See full document
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Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
... Keywords: GaN; InGaN; Patterned sapphire substrate (PSS) ...Introduction GaN-based wide band-gap semiconductors have attracted considerable interest, in terms of ... See full document
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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
... samples grown on GaN templates without SiO 2 NRAs and with SiO 2 nanorods of 100, 200, and 300 nm heights were represented by LED I, LED II, LED III, and LED IV, ...images ... See full document
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Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
... wurtzite GaN, zinc blende GaN was found on the sidewall surfaces 共r-planes兲 of ...the output power, crystal quality, and light extrac- tion ... See full document
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Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate
... etching on c-plane sapphire wafers by three etching solutions (H 3 PO 4 , H 2 SO 4 , and H 3 PO 4 /H 2 SO 4 mixing solution) was ...c-plane sapphire wafer in thickness; instead, a facet ... See full document
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Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
... Chi, and Hao-Chung Kuo, Senior Member, IEEE Abstract—In this paper, we demonstrated the high perfor- mance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned ... See full document
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Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate
... plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous ...(PL) and low temperature ... See full document
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Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
... Chang, and Shawn-Yu Lin Abstract—We investigate the mechanism responding for perfor- mance enhancement of gallium nitride (GaN)-based light-emitting diode (LED) grown on ... See full document
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Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate
... IEEE, and Kei-May Lau, Fellow, IEEE Abstract— We investigate the optical and electrical character- istics of the GaN-based light emitting diodes (LEDs) grown ... See full document
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460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
... the light–output power as a function of the injec- tion current for nonencapsulated 460-nm LEDs grown on CSS and PSS, where the output power was ... See full document
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Improved Output Power of Nitride-Based Light-Emitting Diodes With Convex-Patterned Sapphire Substrates
... high output power is as important as the good I –V ...purpose of the LEDs using patterned ...the light output powers of the LEDs grown on CSS, ... See full document
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High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology
... lithography and dry etching to fabricate patterned sapphire sub- strates (PSSs) of convex-shape with features of various ...pattern of a hard silicon ...mold and ... See full document
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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
... wall of PSS. From the TEM image of AlN located at the bottom of PSS, a mixed crystallized and amorphous AlN of 25 nm on sapphire was observed, and from the TEM ... See full document
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Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
... high-quality GaN epitaxial layer prepared on sapphire substrate could be obtained by applying the PVD nucleation ...dislocations of GaN epitaxial film while preserving the ... See full document
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