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[PDF] Top 20 Crystallization and characterization of Pb2Nb2O7 thin films prepared at high pressure and low temperature

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Crystallization and characterization of Pb2Nb2O7 thin films prepared at high pressure and low temperature

Crystallization and characterization of Pb2Nb2O7 thin films prepared at high pressure and low temperature

... 3.2. Crystallization of Pb 2 Nb 2 O 7 thin films under high- pressure condition The high-pressure process was ... See full document

5

Low-temperature preparation and characterization of iron-ion doped titania thin films

Low-temperature preparation and characterization of iron-ion doped titania thin films

... titania thin films with an anatase phase were successfully synthesized in this study using the high-pressure crystallization (HPC) ...The crystallization temperature of Fe ... See full document

4

Synthesis of photocatalytic TiO2 thin films via the high-pressure crystallization process at low temperatures

Synthesis of photocatalytic TiO2 thin films via the high-pressure crystallization process at low temperatures

... those of TiO 2 thin films annealed under atmospheric ...pressure. 2. Experimental Metalorganic deposition method (MOD) and spin-coating method were adopted to prepare ... See full document

6

Photocatalytic TiO2 thin films prepared via a high-pressure crystallization process

Photocatalytic TiO2 thin films prepared via a high-pressure crystallization process

... Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan, ROC Received 31 May 2004; accepted 23 June 2004 Abstract Titania thin films with high photocatalytic activity ... See full document

4

Low-temperature crystallization of tantalum pentoxide films under elevated pressure

Low-temperature crystallization of tantalum pentoxide films under elevated pressure

... Ta 2 O 5 thin films were prepared via a metal-organic decomposition ...[Ta(OC 2 H 5 ) 5 ] dissolved in toluene was used as the starting ...The prepared precursors were ... See full document

7

Corrigendum to “Synthesis of photocatalytic TiO2 thin films via the high-pressure crystallization process at low temperatures” [J. Hazard. Mater. 147(1–2) (2007) 213–218]

Corrigendum to “Synthesis of photocatalytic TiO2 thin films via the high-pressure crystallization process at low temperatures” [J. Hazard. Mater. 147(1–2) (2007) 213–218]

... Fig. 7. The correct Fig. 7 is given ...Fig. 7. Relations between contact angle and annealing temperature for TiO 2 thin films prepared under atmospheric ... See full document

1

Structural evolution and optical properties of TiO2 thin films prepared by thermal oxidation of sputtered Ti films

Structural evolution and optical properties of TiO2 thin films prepared by thermal oxidation of sputtered Ti films

... evolution and op- tical properties of TiO 2 thin film prepared by thermal oxida- tion of sputtered Ti film over temperatures ranging between 700 and 900 ...TiO 2 ... See full document

7

Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

... PZT films by imprint gel films, which were prepared by metal organic decom- position 共MOD兲 ...composition of PZT film is Pb1.1共Zr 0.52 , Ti 0.48 兲O 3 and the 10% excess ... See full document

5

Determination of stress-optical and thermal-optical coefficients of Nb2O5 thin film material

Determination of stress-optical and thermal-optical coefficients of Nb2O5 thin film material

... ety of deposition techniques, especially by ion-assisted depo- sition 共IAD兲 and ion beam sputtering deposition 共IBSD兲 processes, which involve a transport phenomenon of high energy materials ... See full document

6

Magnetic properties and microstructure of low ordering temperature L10 FePt thin films

Magnetic properties and microstructure of low ordering temperature L10 FePt thin films

... alloy thin film was deposited on a nature-oxidized silicon wafer substrate by dc magnetron sputtering at room ...rotated at 45 rpm in order to get uniform film thickness and ...consisting ... See full document

3

Characterization of delafossite-CuCrO2 thin films prepared by post-annealing using an atmospheric pressure plasma torch

Characterization of delafossite-CuCrO2 thin films prepared by post-annealing using an atmospheric pressure plasma torch

... Characterization of delafossite-CuCrO 2 thin films prepared by post-annealing using an atmospheric pressure plasma torch Hong-Ying Chen ∗ , Wei-Jung Yang, Kuei-Ping Chang ... See full document

2

Physical characteristics and electrical properties of Sr0.8Bi2+xTa2O9 films on Al2O3/Si annealed at high temperature

Physical characteristics and electrical properties of Sr0.8Bi2+xTa2O9 films on Al2O3/Si annealed at high temperature

... Al 2 O 3 /Si substrate at 4000 rpm for 30 s and then dried on a hot plate at a tempera- ture of about 350 ...as-deposited films were annealed at different ... See full document

7

Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin films

Characterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin films

... chart of BaPbO 3 and Ba (Pb 1 −x Bi x )O 3 thin ...resistivity of 10  cm and a bottom electrode in a configuration of 1500 Å Pt/200 Å Ti/2000 Å SiO 2 ... See full document

5

Phasic and microstructural developments of Pb(Ni1/3Nb2/3)O3 prepared by the columbite precursor process

Phasic and microstructural developments of Pb(Ni1/3Nb2/3)O3 prepared by the columbite precursor process

... The excess amount of PbO not only increased the grain size markedly, but also enhanced the structural stability of the perovskite phase at elevated temperatures..[r] ... See full document

7

SYNTHESIS OF HIGH-TC YBA2CU3O7-X SUPERCONDUCTORS AT A LOW ANNEALING TEMPERATURE FROM A GLASS PRECURSOR

SYNTHESIS OF HIGH-TC YBA2CU3O7-X SUPERCONDUCTORS AT A LOW ANNEALING TEMPERATURE FROM A GLASS PRECURSOR

... Synthesis of High-Tc YBa2Cu3O7-x Superconductors at a Low Annealing Temperature from a Glass Precursor. View the table of contents for this issue, or go to the journal homepage for more [r] ... See full document

5

Dielectric relaxation and defect analysis of Ta2O5 thin films

Dielectric relaxation and defect analysis of Ta2O5 thin films

... means of characterizing the electrical nature of a number of electroceramic materials [12, 16, ...impedance and admittance). A semicircular fit of the data in any of these planes ... See full document

7

A characterization on emission property of In2O3-SiO2 nanocomposite thin films

A characterization on emission property of In2O3-SiO2 nanocomposite thin films

... sizes and densities of In 2 O 3 nanoparticles in the nanocomposite thin films were adjusted by varying the sputtering power and the num- ber of In 2 O 3 ... See full document

5

Synthesis and Characterization of Fluorinated Aminoalkoxide and Iminoalkoxide Gallium Complexes:  Application in Chemical Vapor Deposition of Ga2O3 Thin Films

Synthesis and Characterization of Fluorinated Aminoalkoxide and Iminoalkoxide Gallium Complexes: Application in Chemical Vapor Deposition of Ga2O3 Thin Films

... effect of the bulky Bu t sub- stituent. For material applications, deposition of Ga 2 O 3 by the MOCVD process is possible using the complexes 1 and 4; thin films ... See full document

9

Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates

Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates

... size of the films (Table 1). The SBT films with larger grain sizes exhibit better ferroelectric ...nucleation, and domain mobility. Ren et al. [5,6] have correlated the grain size of ... See full document

5

Temperature dependence of superfluid YBa2Cu3O7-delta and Y0.7Ca0.3Ba2Cu3O7-delta density in thin films: A doping dependence study of the linear slope

Temperature dependence of superfluid YBa2Cu3O7-delta and Y0.7Ca0.3Ba2Cu3O7-delta density in thin films: A doping dependence study of the linear slope

... regime of YBCO and Ca-YBCO thin films, the mag- nitude of the slope d(1/k 2 (T))/dT is insensitive to doping, and it can be treated in the framework of projected d-den- ... See full document

5

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