[PDF] Top 20 Fabrication and characterization of the Pd-silicided emitters for field-emission devices

... 4(b), it can be seen that the suicide phase PdSi has completely be formed on the whole emitter surface. In addition, theapex of the emitter is also converted into palladium silicide and [r] ... See full document

... Results and discussion Fig. 1 presents a SEM photograph of the non-doped diamond emitter, while Table 1 list the deposition ...diamond emitters have several branches on their lateral or ... See full document

... nanogap fabrication technique is rather complicated and expen- ...simulation of SCE has not been clearly drawn yet. A multiple scattering model for the electron emis- sion mechanism ... See full document

... as the field emission ...top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission ...characteristics. The turn-on fields were ... See full document

... 7 Characterization of the electron emission process of SCEs with nanogap of 30 nm ...(a) The I-V curves of two SCE devices. (b) The corresponding F-N ... See full document

... A. Fabrication of Silicon Rice-Straw Array ...immersing the cleaned [100]-oriented silicon wafer (As-doped, resistivity: 1-10 Ωcm) into ...HF and 20 mM AgNO 3 aqueous etching solution in a ... See full document

... on the wafer surface after the AAO fabrication, and was used as the bottom ...as the catalyst for CNT growth, and was electro- chemically deposited at the ... See full document

... CNFSs, and CNTs presenting graphitic CNFs to be synthesized on stainless-steel ...substrates. The applied bias has a signi ficant influence on the type of CNM structures formed on the ... See full document

... technologies and theories for nano-optoelectronic applications such as single-electron transistors, 1 field electron emitters, 2 and ad- vanced ...3 For the ... See full document

... 2007 The Electrochemical ...bandgap of 3.4 eV at room temperature and is a popular semiconductor material with po- tential applications in blue and UV light emission, high temperature, ... See full document

... From the above results, we see that the b value for our CNF/SiC- coated Si-NC emitters is determined not only by the geometrical characteristics of the emitters, ... See full document

... appropriate for such emitters has not yet been ...voltage and high efficiency for cold cathode operation, the surface work function of a field emitter should be minimized ... See full document

... although the turn-on field (E 0 ) for EFE of UNCD/SiNW is considerably larger than that for CNTs, the emission current density for these UNCD/SiNWs is large enough ... See full document

... using the low temperature growth aqueous solution method. The chemical and plasma etching treatments were carried out on the as-grown ZnO nanorods to provide the nanorods with various ... See full document

... during the plasma treatment and, thus might play a non-neglegible role in assisting surface ...shows field-emission I-V curves and the corresponding F-N plots of ... See full document

... promising for electrodes in molecular electronics, 1,2) biosensors, 3) and vacuum micro- ...because of the complexity and unreliability of nanogap fabrication and ... See full document

... As the PdO film grew thicker, the interfacial stress between the PdO deposit and the Pt substrate became so large, due to the large lattice mismatch, that decomposition of ... See full document

... Abstract Field emission (FE) triode arrays with the anodic aluminum oxide (AAO) template carbon nanotubes (CNTs) as the field emitters are successfully fabricated and ana- ... See full document

... on field emission characteristics in surface-conduction elec- tron ...emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the ... See full document

... to the increase in the sub- threshold swing of the ...device. The performance is much worse than the results shown in ...31) and the cause is attributed to ... See full document