[PDF] Top 20 High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
... The high reso- lution TEM graph 共the inset of ...interface quality between Ge and ...of Ge on ...the Ge film, 7,8 a high pumping level, high temperature, and ... See full document
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Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition
... a high-angle annular dark field (HAADF) image of the InAs/GaAs interface region taken along the [010] zone axis (sample ...made by a differ- ent type of atom. The atomic arrangement in the InAs ... See full document
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Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
... the substrate typically held at room tempera- ...the chemical reactions and atomic pro- cesses occurring in different temperature ...For Ge deposition on Si ~100! and Si ... See full document
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Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition
... InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance ...materials ... See full document
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Nanocone SiGe antireflective thin films fabricated by ultrahigh-vacuum chemical vapor deposition with in situ annealing
... flective thin films as a result of SiGe clustering on SiGe ...as high as ...array on its ...array on the SiGe surface effectively reduced re flection losses and enhanced light ... See full document
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Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition
... silicon thin-film tran- sistors 共LT poly-Si TFTs兲 have attracted considerable atten- tion for use in active matrix liquid crystal displays 共AMLCDs兲 due to their better performance and the ability of ... See full document
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Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition
... crystal quality of the thin film was improved with increasing annealing ...treatment on the optical properties of the films in more detail, a LT (14 K) PL measurement was performed on ... See full document
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Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition
... development on GaN-based materials and structures have been greatly enhanced in recent years and remarkable breakthroughs have been achieved in their growth and applications in visible – UV light emitting diode ... See full document
5
Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire
... 3.4. Visible Raman scattering Fig. 7 shows the micro-Raman scattering spectra for three ZnO films, under the excitation of 488 nm from an Ar + laser. A sharp peak at 437 cm − 1 is observed for all ZnO samples, which is ... See full document
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Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition
... ZnO thin films were deposited on Si (100) substrate by atmospheric pressure metal-organic chemical vapor depo- sition at temperatures varying from 450 to 600 ...films ... See full document
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A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition
... dopants on the dislocation structure and its further influence on the IR response of GaN films are studied by cross-section and high resolution TEM, AFM and ...good film quality ... See full document
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Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor deposition
... In this work, we explored the Ge fraction, layer thickness and dopant concentration uniformity of epi- layers grown by an ultrahigh-vacuum chemical vapor deposition s[r] ... See full document
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Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
... In order to determine and to verify the quality of the crystallinity, including the layer thickness, compositional uniformity and the structural differ- ences between the[r] ... See full document
5
SiGe nanorings by ultrahigh vacuum chemical vapor deposition
... nanorings grown by ultrahigh vacuum 共UHV兲 chemical vapor deposition 共CVD兲 have been reported ...well-defined Ge content at edges are ...ized by atomic force ... See full document
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CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM
... By this fitting work, we can also obtain the grain boundary trap state density and actual average carrier concentration in the grain. We found that these films a[r] ... See full document
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Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition
... self-assembled Ge quantum dots 共QDs兲 on Si has been intensively investigated for a new generation of electronic and optoelectronic devices in recent ...1–5 Deposition of Ge on Si共001兲 ... See full document
3
Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition
... been grown on Si(1 0 0) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance ... See full document
5
Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition
... Si substrate induces very small Ge dots with enhanced light-output below the critical thickness ...C-induced Ge dots remains a critical issue ...controlled by hydrogen desorption in the ... See full document
4
Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
... At relatively low T, the magnitude of the momentum of phonons is too small to induce the size effect such that the Umklapp scattering process occurring in the interior may possibly be dominant over that occurring at the ... See full document
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Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
... Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition Z.C. Feng a, *, W. Liu b , S.J. ... See full document
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