[PDF] Top 20 Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition
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Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition
... t r a c t In this study, interfacial structure of a-ZnO with misfit accommodation on r-sapphire at low and high growth temperatures (LT and HT) ... See full document
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Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition
... evolution of HT-ZnO and LT-ZnO films on sapphires can be observed by employing in situ RHEED (at growth temperature) and ex situ AFM measurements (at room tempera- ture) as shown in ... See full document
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The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition
... pattern of ZnO:Al films on r-plane sapphire is shown in ...peaks of sapphire r-plane and ZnO:Al a-plane can be seen at ... See full document
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Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition
... in a-plane orientation were grown by PLD on r-plane sapphire with epitaxial relationship of (1 1 2¯ 0) ZnO J(0 1 1¯ 2) sapphire and [0 0 0 1] ... See full document
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Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition
... light laser diodes, and high power ...mainly grown in the direction parallel to [0 0 0 ...devices of c-plane GaN suffer from undesirable spontaneous and piezoelectric polarization effects, ... See full document
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Near infrared to UV dielectric functions of Al doped ZnO films deposited on c-plane sapphire substrate using pulsed laser deposition
... Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India b Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan 115, Republic of China c Department of ... See full document
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Single Domain m-Plane ZnO Grown on m-Plane Sapphire by Radio Frequency Magnetron Sputtering
... Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan ‡ Division of Scienti fic Research, National Synchrotron Radiation Research ... See full document
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Structure and property of epitaxial titanium oxynitride grown on MgO(001) substrate by pulsed laser deposition
... growth of TiNO on MgO is also con firmed by cross-sectional high-resolution TEM as shown in ...samples A and B along [100] zone ...as a result of the very small in-plane ... See full document
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Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
... ZnO, a wide direct band gap material, has attracted much attention for its applications in ultraviolet photonic devices of which the performance is strongly influenced by the structural ... See full document
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Growth and structural characterization of ZnO on Y2O3/YSZ by pulsed laser deposition
... Introduction ZnO is an attractive oxide semiconductor material for opto- electronic applications such as short-wavelength light emitting diodes and laser diodes because of its superior properties ... See full document
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Growth and Characteristics of a-Plane GaN on ZnO Heterostructure
... bandgap ZnO has attracted extensive attention due to their superior characteristics in optoelectronics 1 and ...and a quite large room temperature bandgap of ...Based on their similar ... See full document
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The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers
... and ZnO nanorods were fabricated by the following ...the ZnO buffer layers were grown on glass, Si(111), 6H-SiC(0001) and c-plane sapphire, by the pulsed ... See full document
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InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
... were grown through MOCVD in a single- wafer Emcore system with a vertical reactor ...lithographically on a sapphire sub- strate. The dimensions of the mask openings and ... See full document
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Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
... t r a c t Mirror-like and pit-free non-polar a-plane (1 1 −2 0) GaN films are grown on r-plane (1 −1 0 2) sapphire substrates using metalorganic chemical ... See full document
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Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
... (RSM) by using X-ray diffraction around the ð1 1 ¯2 0Þ ...obtain a good surface morphology of an a-plane GaN bulk, were ...thickness of the AlN nucleation layer and the V/III ... See full document
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Effect of growth temperature on a-plane ZnO formation on r-plane sapphire
... images of 50 nm thick LT and HT grown ZnO films are shown in ...LT ZnO exhibits stripelike morphology, whereas the HT ZnO films do not show these striped ...is a morphology ... See full document
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Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
... demonstrated a-plane green InGaN–GaN LEDs grown on r-plane sapphire and investi- gated their EL ...characteristics. A series of experiments showed that high ... See full document
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition
... non-polar a-plane GaN thin films on r-plane sapphire using a series of growth con- ditions by metal-organic chemical vapor ...to a fully coalesced ... See full document
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Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
... with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire ...investigated by means of photoluminescence 共PL兲, cathodoluminescence, and time ... See full document
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Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire
... fabrication of ZnO thin film materials. 2. Experiment A zinc oxide MOCVD system is designed and built by Structured Materials Industries ...with a high speed rotation disk. It is ... See full document
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