[PDF] Top 20 Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy
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Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy
... insert of Fig. 4, to explain the strong PL of the InSb/ GaAs QD ...top of the ZnTe QD. It is caused by the electron–hole Coulomb interaction, which in turns generates the respective ... See full document
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Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
... Communicated by M. Schieber Abstract The e!ects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown ... See full document
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Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy
... Millipore molecular filters and a flow rate controller to the RF plasma ...consists of 0.2 μm GaAs buffer, followed by a dot-in- a-well structure with 6 ML of InAs quantum dots ... See full document
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Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy
... tunneling properties were observed in the metal- oxide-semiconductor diode consisting of ferromagnetic Zn 1 x Mn x O nanocrystals ...films grown by pulsed laser ablation and rf magnetron ... See full document
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Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam Epitaxy
... shift of the C738 SQW unambiguously results from the In-Ga interdiffusion between well and barrier; however, the blue shift of C736 after RTA is obviously larger than that of C738 for an- nealing ... See full document
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Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
... Abstract Self-assembled CdSe/ZnSe quantum dots (QDs) were grown at various growth temperatures on GaAs (0 0 1) by molecular beam ...clearly by atomic force ... See full document
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Mechanical and optical properties of InAs/GaAs self-assembled quantum dots
... mismatch of lattice constants will induce further elastic deformation in the whole nanostructure system, namely, in both the substrate and the quantum dot ...the quantum dot ...framework of ... See full document
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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
... were grown on 共100兲 n + -InAs substrates using a VG-V80H MBE ...thickness of 100 nm was grown at 480 ° ...was grown at 450 ° C. The thickness of the InAsSb well and InAs barrier were 7 ... See full document
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Optical properties of self-assembled InGaAs quantum wires grown on (100) GaAs substrate
... InGaAs quantum wires on (100) GaAs substrates by solid-source molecular beam epitaxy via Stranski-Krastanov growth ...shape of the nano-wire structures are measured by the ... See full document
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Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
... Department of Electronic Engineering, Chien-Kuo Institue of Technology, Taichung, Taiwan, ROC d Department of Electro-physics, National Chiao Tung University, Hsinchu, Taiwan, ROC Received 29 January ... See full document
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Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
... were grown on semi-insulating epi-ready GaAs(001) using Veeco-Applied EPI 620 molecular beam epitaxy ...oxide of the substrate was removed by chemical etching with NH 4 OH and a ... See full document
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Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
... the dots. In the first group, a Zn-stabilized surface was fixed on the end of an ZnSe ...deposited by the AS method with various ...rate of CdTe was approximately 0.2 ML/s, as determined ... See full document
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Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy
... irradiation by atomic hydrogen during epitaxial growth is more efficient for passivation of misfit dislocations than the postgrowth H-plasma ...most of the cases, thermal cracking of ... See full document
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Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots
... characteristics of the self-assembled single-layer ZnTe/ ZnMnSe quantum dots grown by molecular beam epitaxy were ...the ZnTe coverage ... See full document
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The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy
... lots of attention due to its superior elec- trical, optical and piezoelectric properties for the application in light emitting diodes, solar cells and surface acoustic wave devices ...two-dimensional ... See full document
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Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots
... Quantum dots 共QDs兲 have attracted much attention be- cause of their potential applications in optical and optoelec- tronic ...共PL兲 of a QD ensemble quenches when the temperature is ... See full document
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Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
... Substrate orientation, ASH; flow rate, V/III ratio, thermal quenching energy and activation energy for all QDs samples... 590.[r] ... See full document
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High quality quantum dots fabricated by molecular beam epitaxy
... The size of the quantum dots could be changed by using different thickness for the AlAs mask and different thermal etching temperature.. 3, it is noticed that the inten[r] ... See full document
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Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy
... quenching of luminescence in the MQW structures proceeds mainly by two mechanisms: thermal emission of (at least one type of) charge carriers out of confined quantum-well states ... See full document
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Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy
... effect of substrate orientation [3] shows that the QDs grown on (7 1 1)B substrate have better quan- tum efficiency than those on (5 1 1)B and (1 0 0) ...uniformity of the ... See full document
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