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[PDF] Top 20 Structure and properties of GZO thin films grown on ZnO buffer layers

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Structure and properties of GZO thin films grown on ZnO buffer layers

Structure and properties of GZO thin films grown on ZnO buffer layers

... t Thin gallium-doped zinc oxide (in GZO the Ga 2 O 3 contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) ... See full document

11

Structural and optical properties of ZnO nanorods grown on MgxZn1xO buffer layers

Structural and optical properties of ZnO nanorods grown on MgxZn1xO buffer layers

... the ZnO nanorod arrays with good vertical alignment and crystallization could be attained for the Mg x Zn 1 x O film with x = ...because of the small grain size and surface roughness of ... See full document

2

Nano-structure study of ZnO thin films on sapphire grown with different temperature conditions

Nano-structure study of ZnO thin films on sapphire grown with different temperature conditions

... interface of sample A. The interface is quite clear. Generally speaking, the ZnO crystalline quality is ...two layers, confirming that the ZnO basal plane is twisted by ...separation of ... See full document

7

Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering

Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering

... the ZnO:Al films are extremely chemically active. The chemisorption of oxygen atoms at the surface of ZnO:Al thin films may absorb electrons from the conduc- tion band ... See full document

4

Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

... Transparent and conductive Al-doped (2 wt.%) zinc oxide (AZO) films were deposited on inexpensive soda-lime glass substrates by using rf magnetron sputtering at room ...effects of argon sputtering ... See full document

5

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

... effects of Cr buffer layers and post-annealing on the properties of titanium- doped zinc oxide (TZO) thin films prepared by radio frequency magnetron ...mobility ... See full document

5

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

... resistivity and higher average transmittances in the visible ...resistivity and transmittance are more obvious when a TiO 2 buffer layer was ...deposited on bare SLG substrate, the energy band ... See full document

9

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

... effect on the crystalline ZnO films, TEM analysis were ...for ZnO films annealed at 850 8C in nitrogen atmosphere, it was found that the cross-sectional microstructure was clearly ... See full document

5

Improved crystallinity and optical properties of AlOx thin films by a ZnO interlayer

Improved crystallinity and optical properties of AlOx thin films by a ZnO interlayer

... quality of AlO x films, AlO x films were grown on a bare glass and a ZnO-deposited glass in this ...a ZnO interlayer before the AlO x deposition, AlO x films ... See full document

8

Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films

Influence of the threading dislocations on the electrical properties in epitaxial ZnO thin films

... structural and electrical properties of epitaxial ZnO films grown by pulsed-laser deposition on sapphire (0 0 0 1) were investigated by high-resolution X-ray diffraction (XRD), ... See full document

6

Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)

Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)

... , and DH ZnO = ...formation of an amorphous silica layer at the Y 2 O 3 –Si interface can be obstructed and provides a nice template for subsequent epitaxial ...that ZnO epitaxial ... See full document

7

Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells

Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells

... inside thin films, such as grain boundaries, vacancies, and interstitials, result in the scattering of the carriers and reduce the carrier ...effect of mobility measured by the Hall ... See full document

5

Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films

Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films

... electrical properties and Ga doping concentration was clarified by analyzing the chemical element compositions and the chemical states on the GZO ...concentrations and oxygen ... See full document

5

Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition

Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition

... Summary and conclusions ZnO thin films were deposited on Si (100) substrate by atmospheric pressure metal-organic chemical vapor depo- sition at temperatures varying from 450 to 600 ... See full document

5

Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet

Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet

... surface and cross-sectional SEM images of SiO x buffer layers deposited for different argon carrier gas flow rates, 30 and ...rates of argon carrier gas, 30 and 60 sccm, ... See full document

9

Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy

Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy

... nol, and then chemically etched in H 2 SO 4 :H 3 PO 4 ¼3 7 1 at 160 1C for 15 min followed by deionized water rinse and spin ...1C and treated in oxygen plasma, which is expected to produce an oxygen ... See full document

4

Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

... optical and structural ...fabrication of ZnO thin film ...designed and built by Structured Materials Industries ...is of a vertical orientation built to all metal UHV ...zinc ... See full document

6

Influence of the substrate temperature on the electrical and magnetic properties of ZnO:N thin films grown by pulse laser deposition

Influence of the substrate temperature on the electrical and magnetic properties of ZnO:N thin films grown by pulse laser deposition

... deposited ZnO thin films formed at the constant partial pressure of a N 2 O atmosphere at various substrate temperatures revealed different ferromagnetic magnetization ...these thin ... See full document

4

The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers

The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers

... Introduction ZnO is an efficient material for photonic device use in the wavelength range of ultraviolet to blue, since it has a wide band gap energy of ...eV and a large exciton binding ... See full document

6

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition

... stability of 0.5 K or better. 3. Results and discussion ...spectra of MOCVD films III – V source ratio has an important influence on the resulting epitaxial InSb ...dependence of ... See full document

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