經電漿後處理之奈米碳管性質研究

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經電漿後處理之奈米碳管性質研究

.

The Properties of Carbon Nanotubes

Post-Treated by Plasma

研 究 生：翁銘襄

指導教授：周長彬 教授

吳文發 博士

࿶ႝዀࡕೀ౛ϐڼԯᅹᆅ܄፦ࣴز

The Properties of Carbon Nanotubes Post-Treated by Plasma

ࣴ ز ғǺશሎᖪ StudentǺMing-Hsiang Weng ࡰᏤ௲௤Ǻڬߏர AdvisorǺChang-Ping Chou ֆЎว Wen-Fa Wu ୯ ҥ Ҭ ೯ ε Ꮲ ᐒ ఓ π ำ Ꮲ س ᅺ γ ፕ Ў A Thesis

Submitted to Institute of Mechanical Engineering College of Engineering

National Chiao Tung University in partial Fulfillment of the Requirements

for the Degree of Master

in

Mechanical Engineering

June 2006

Hsinchu, Taiwan, Republic of China

࿶ႝዀࡕೀ౛ڼԯᅹᆅϐ܄፦ࣴز

Ꮲғ:શሎᖪ

ࡰᏤ௲௤:

.

ڬߏர

.

ֆЎว

୯ҥҬ೯εᏢᐒఓπำᏢس

ᄔ!!ा!

ҁፕЎЬाଞჹႝዀೀ౛ჹܭڼԯᅹᆅ߄य़܄፦բ΋ుΕࣴ زǹಃ΋ঁЬᚒࣁόӕ጗ፂቫϐᙻ᝻൞࿶ H2ႝዀ߻ೀ౛ࡕϐ่ᄬᢀ ჸǴಃΒঁЬᚒࣁ߻ೀ౛ࡕϐ᝻൞ቫᆶԋߏڼԯᅹᆅޑᜢ߯ࣴزǴಃ ΟঁЬᚒճҔ H2ǵO2ǵNH3ǵCF4ǵCF4/O2ϖᅿႝዀჹ᏾Тڼԯᅹᆅ аϷᏤጕϾ(via)ύԋߏϐڼԯᅹᆅ຾Չࡕೀ౛Ǵᢀჸೀ౛ֹԋࡕᅹᆅ ߄य़ࠠᄊᆶࠔ፦ޑᡂϯǶϩ݋೽ҽхࡴԖ௟ඔԄႝηᡉ༾᜔(SEM)ǵ চηΚᡉ༾᜔(AFM)ǵऀ೸Ԅႝηᡉ༾᜔(TEM)ǵഡճယᙯඤआѦጕ Ӏ᛼ሺ(FTIR)ᆶ܎ୗӀ᛼ሺ(Raman spectroscopy)Ƕ ӧᙻ᝻൞ቫӧ࿶ၸ H2ႝዀ߻ೀ౛ࡕǴҗܭ዗ૈаϷ H2ႝዀޑᇑ څਏᔈǴև౜৞ރϯߎឦᗭಈǴௗΠٰԋߏڼԯᅹᆅک᝻൞৞ރϯᗭ ಈԖࡐεޑ࣬ᜢ܄Ǵӧၨλޑ߻ೀ౛᝻൞ᗭಈ܌ԋߏڼԯᅹᆅϐᆅ৩ ཮ၨλǴϸϐၨεޑ߻ೀ౛᝻൞ᗭಈ཮ளډᆅ৩ၨεޑڼԯᅹᆅǶᅹ ᆅӧ࿶ၸόӕႝዀೀ౛ࡕǴH2ᆶ CF4ႝዀჹܭᅹᆅ߄य़ࠠᄊ٠ؒԖࡐ ܴᡉޑቹៜǴO2ǵNH3ǵCF4/O2ႝዀ߾֡ԖߺอᅹᆅǴӧᏤጕϾύϐ

ᅹᆅ࿶ O2ǵNH3ႝዀࡕೀ౛Ԗ࣬ӕ่݀Ƕ

҂ٰᅹᆅᏤΕϣೱጕڗж໺಍ߎឦǴёճҔႝዀஒᅹᆅߺอǴග ٮନΑϯᏢނ౛ܙӀݤ(CMP)ќ΋ঁѳڶϯޑБݤǶ

The Properties of Carbon Nanotubes Post-Treated by

Plasma

Student:Ming-Hsiang Weng Advisor:Chang-Ping Chou Wen-Fa Wu

Department of Mechanical Engineering National Chiao Tung University

Abstract

This.thesiss.studies .the .effect .of .plasma treatment on the

surface.property.of .carbon. nanotubes..The first topic is the Ni

catalyst layer which .was 1deposited 1on different .barrier layers

with.H2 .plasma pretreatment. The second. topic focuses .on the

relationship 1between .Ni.catalyst1 layer1 after .H2 .plasma pre-

treatment 1and1growth1of1carbon nanotubes. The. third 1topic

studies.the..structure. and .quality .of .carbon.nanotubes .which

includes on blanket .wafer and in via after H2, O2, NH3, CF4 and1

CF4/O21plasma post-treatment. Scanning .electron.microscopy

(SEM), transmission electron (microscopy (TEM), atomic force

microscopy .(AFM) are 1used (to determine .surface1roughness

and ..image .surface.topography. .Element bonding is measured

by. Fourier.-.transform.(infrared.spectroscopy((FTIR)..Raman

spectroscopy analyzes the quality of carbon nanotubes.

After. H2 .plasma .pre-treatment, Ni catalyst layer becomes

island.-.like. .because of thermal energy and etching effect of H2

plasma and.these island.-.like Ni particle plays an important role

catalyst.particle. is .small, the .diameter .of carbon nanotubes is

also small. .The.structure .of.carbon.nanotubes .does. not have

obvious damage after H2 and CF4 plasma.treatment but O2, NH3,

CF4/O2.plasma .shorten .the .length .of .carbon .nanotubes. This

phenomenon also can find in carbon nanotubes growth in via. Interconnection will introduce carbon nanotubes instead of

traditional.metal.in. the .future .and. We .report. an approach to

shorten1 the1 length 1of1 carbon 1nanotubes 1except chemical-

ठ!!ᖴ!

२ӃགᖴࡰᏤ௲௤Ǵڬߏர௲௤ᆶֆЎวറγჹܭᏢғፌፌ௲Ꮴ ᆶऐЈࡰᏤǴ٬Ꮲғӧᅺγ੤؃Ꮲޑၸำύૈ໩ճޑ౥཰Ƕགᖴգॺ ჹܭᏢғޑჴᡍೕჄаϷБӛ๏ϒ҅ዴޑࡌ᝼Ǵ٠๏Ꮲғჴᡍ܌ሡϐ ᔅշᆶᖄᛠǴ٬ளӧჴᡍ೛ഢ೛ഢᏢಞᆶᔅշБय़όဤ჆ЮǶӧ଺Γ ೀШ΢ΨჹᏢғ๏ϒ೚ӭޑЇᏤǴ٬Ꮲғளډ҅ዴޑΓғ࿶ᡍǴΨӢ Ԝᡏ཮ډӧଓ؃ޕ᛽ΠϝฅԖ೚ӭೀШޑඵችࢂᏢғ܌ᔈ၀ᏢಞޑǶ!! གᖴྕ๮மᏢߏǴதத೿ाഞྠᏢߏᔅךׯܿՋᗋԖှเך΋٤ ࡐڻ܁ޑୢᚒǴவᏢߏޑᔅԆᏢډΑ೚ӭ׷਑ϩ݋࣬ᜢޑޕ᛽ǴаϷ ჴᡍਔाݙཀޑಒ࿯کλמѯǶӧٿԃޑਔ໔ύǴགᖴ஖ᆜǵϡቺǵ ᝬύǵܹᓄǵܱᄡǵڷֻǵەቨ฻ӕᏢޑᔅշаϷჴᡍ࠻Ꮲ׌ۂἻؼǵ ণ◖ǵ߷׊ǵ⽞ᑯǴགᖴգॺӧғࢲаϷჴᡍ΢๏ךޑڐշǴ٬ך᝺ ளᅺγޑғࢲ٠όࢂٗሶኬޑค፪ǴΨགᖴӧڼԯჴᡍ࠻΋ଆբჴᡍ ޑܻ϶ᖴᖴգॺǶ!! !!!!നࡕाགᖴךޑৎΓᗋԖԴݿԴ༰Ǵ؃ᏢޑၸำգॺᕴࢂࡐЍ࡭ ךǴΨࡐܫҺךԾҗޑᏢಞǴ፾ਔޑ๏ךႴᓰࣁךѺ਻Ǵ໻ஒ೭ҽፕ Ў᝘๏գॺǴᖴᖴգॺǶ!

Ҟ

ᒵ

ύЎᄔा --- i मЎᄔा --- iii ठᖴ --- v Ҟᒵ --- vi ߄Ҟᒵ --- ix კҞᒵ --- x ΋... ᆣፕ --- 1 Β. . ୷ᘵ౛ፕᆶЎ᝘ӣ៝ --- 4 2.1 ..ڼԯᅹᆅޑ่ᄬ --- 4 2.2 ..ڼԯᅹᆅޑ܄፦ --- 5 . 2.2.1 ൑ว৔੝܄ --- 5 . 2.2.2 ᐒఓ܄፦ --- 5 . 2.2.3 Ꮴႝ܄ --- 6 . 2.2.4 ዗ᛙۓ܄ǵ዗Ꮴ܄Ϸ዗ᑩ๞܄ --- 7 2.3 ..ڼԯᅹᆅޑᇙഢБԄ --- 8 . 2.3.1 ႝ۱ܫႝݤ --- 8 . 2.3.2 ႜ৔গߺݤ --- 9 . 2.3.3 ϯᏢ਻࣬؈ᑈݤ --- 9 2.4 ..ڼԯᅹᆅޑԋߏᐒڋ --- 10 . 2.4.1 ᅹ࿶җ໽ϯᏊᘉණ --- 11 . 2.4.2 ᅹ࿶җ໽ϯᏊ߄य़ᘉණ --- 11 2.5 ..ڼԯᅹᆅܭႝηౢ཰ϐᔈҔ --- 12 2.6 ..ႝዀޑ୷ҁচ౛ --- 13 . 2.6.1 ႝዀޑౢғ --- 13 . 2.6.2 ႝዀޑ࿘ና --- 14 ..2.6.1-1 ᚆηϯ --- 14 2.6.2-2 ᐟวᆶ᚞ԅ࿘ና --- 14 2.6.2-3 ϩှ --- 15 .2.6.3 ႝዀޑᔈҔ --- 15 2.7 ..ڼԯᅹᆅϐࡕೀ౛ --- 16

Ο. ჴᡍБݤᆶϩ݋--- 25 3.1 ჴᡍࢬำ--- 25 3.2 ჴᡍᆶϩ݋ሺᏔ--- 25 3.2.1 ჴᡍ׷਑ --- 25 3.2.2 ჴᡍሺᏔ --- 25 . 3.2.2-1༾ݢႝዀϯᏢ਻࣬؈ᑈس಍ --- 25 . 3.2.2-2ႝዀᇶշϯᏢ਻࣬؇ᑈس಍ --- 26 . 3.2.2-3Ծ୏ϯӀߔ༡թϷᡉቹس಍ --- 26 . 3.2.2-4 .I-Line ӀᏢ؁຾ᐒ --- 26 3.2.3 ϩ݋ሺᏔ --- 27 . 3.2.3-1 ௟ඔԄႝηᡉ༾᜔--- 27 . 3.2.3-2 ऀ೸Ԅႝηᡉ༾᜔--- 27 . 3.2.3-3 ᚆη෧ᖓᐒ--- 28 . 3.2.3-4 চηΚᡉ༾᜔--- 28 . 3.2.3-5 ܎ୗӀ᛼ሺ--- 28 . 3.2.3-6 ഡճယᙯඤआѦጕϩ݋ሺ--- 30 3.3 ჴᡍ؁ᡯ--- 30 3.3.1 ၂Тྗഢ --- 30 3.3.2 ᝻൞߻ೀ౛ᆶڼԯᅹᆅԋߏ --- 31 3.3.3 ႝዀೀ౛ --- 32 3.3.4 ၂Тϩ݋ --- 32 Ѥ. ჴᡍ่݀ᆶ૸ፕ--- 39 4.1 όӕ጗ፂቫϐ᝻൞߻ೀ౛ᢀჸ--- 39 4.1.1 ௟ඔԄႝηᡉ༾᜔ --- 39 4.1.2 চηΚᡉ༾᜔ --- 40 4.1.3 ऀ೸Ԅႝηᡉ༾᜔ --- 40 4.2 όӕ጗ፂቫϐ᝻൞߻ೀ౛૸ፕ--- 40 4.3 όӕ጗ፂቫ΢ԋߏڼԯᅹᆅ--- 41 4.3.1 ௟ඔԄႝηᡉ༾᜔ --- 42 4.4 όӕ጗ፂቫ΢ԋߏڼԯᅹᆅ૸ፕ--- 42 4.5 ڼԯᅹᆅႝዀࡕೀ౛౜ຝᢀჸ--- 43 4.5.1 ௟ᅲԄႝηᡉ༾᜔ --- 44 4.5.2 ܎ୗӀ᛼ሺ --- 45

4.5.3 ഡճယᙯඤआѦጕϩ݋ሺ --- 47 4.6 ႝዀೀ౛౜ຝ૸ፕ --- 48 4.7 ่ᄬύԋߏڼԯᅹᆅ --- 49 4.8 ่ᄬύڼԯᅹᆅᆶႝዀࡕೀ౛ --- 50 ϖ. ่ፕ --- 87 Ϥ. ୖԵЎ᝘ --- 88

߄Ҟᒵ

߄ 2.1 ᇙഢڼԯᅹᆅБԄКၨ --- 24 ߄ 2.2 ڼԯᅹᆅ੝܄᏾౛߄ --- 24 ߄ 3.1 ႝዀϯᏢ਻࣬؈ᑈس಍ೕ਱߄ --- 36 ߄ 3.2 ௟ᅲԄႝηᡉ༾᜔س಍ೕ਱߄ --- 36 ߄ 3.3 ऀ೸Ԅႝηᡉ༾᜔س಍ೕ਱߄ --- 37 ߄ 3.4 চηΚᡉ༾᜔ೕ਱߄ --- 37 ߄ 3.5 ܎ୗӀ᛼ሺس಍΋૓ೕ਱߄ --- 38 ߄ 3.6 आѦጕӀ᛼ᓎ᛼Տ࿼ --- 38 ߄ 4.1 ߻ೀ౛ᆶڼԯᅹᆅԋߏ၂Тጓဦ߄ --- 82 ߄ 4.2 ߻ೀ౛ࡕ၂Т߄य़ѳ֡ಈ৩߄ --- 82 ߄ 4.3 ႝዀࡕೀ౛ୖኧ߄ --- 82 ߄ 4.4 H2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ --- 83 ߄ 4.5 O2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ --- 83 ߄ 4.6 NH3ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ --- 83 ߄ 4.7 CF4ᆶ CF4/O2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ --- 84 ߄ 4.8 100W H2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ --- 84 ߄ 4.9 200W H2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ --- 84 ߄ 4.10. 100W O2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ --- 84 ߄ 4.11 .200W O2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ --- 85 ߄ 4.12 .100W NH3ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ - 85 ߄ 4.13.200W NH3ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ - 85 ߄ 4.14.300W CF4ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ -- 85 ߄ 4.15. 300W CF4/O2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋ Кॶ --- 86 ߄ 4.16 ่ᄬύԋߏڼԯᅹᆅୖኧ߄ --- 86 ߄ 4.17 όӕ่ᄬԋߏϐӀ᛼Տ࿼ᆶமࡋКॶ --- 86

კҞᒵ!

კ 1.1 ᅹᆅܭϣೱጕᔈҔϐҢཀკ(a)ᅹᆅ༤кܭϟ፦Ͼ ύ(b)ႝዀೀ౛ஒᅹᆅߏࡋߺอ٠Ϫሸ--- 3 კ 2.1 ᅹޑѤᅿ่ᄬ(a)ҡᏀ(b)ᢕҡ(c)C60(d)ڼԯᅹᆅ --- 17 კ 2.2 ऀ೸Ԅႝη៞༾᜔ᢀჸϐόӕϣѦ৩ӭᏛڼԯᅹ ᆅ --- 17 კ 2.3 ൂቫڼԯᅹᆅ(SWNT)่ᄬҢཀკǶ(a) armchair ᅹᆅǹ(b) chiral ᅹᆅǹ(c) zigzag ᅹᆅ--- 18 კ.2.4 аΒᆢҡᏀѳय़ӛໆ߄Ңڼԯᅹᆅ่ᄬ --- 18 კ 2.5 ႝ۱ܫႝݤ೛ഢკ --- 19 კ 2.6 ႜ৔਻ϯݤ೛ഢკ --- 19 კ 2.7 ϯᏢ਻࣬؈ᑈݤ೛ഢკ --- 19

კ 2.8 Grujicic ගрٿᅿ(a)ۭ೽ԋߏ(Base growth) (b)ഗ ೽ԋߏ(Tip growth)ኳᔕᅹᆅԋߏኳࠠ--- 20 კ 2.9 ᅹ࿶җ໽ϯᏊᘉණԋߏᐒڋҢཀკ --- 20 კ 2.10 ᅹ࿶җ໽ϯᏊ߄य़ᘉණᐒڋҢཀკ --- 21 კ 2.11 ႝዀғԋҢཀკ --- 21 კ 2.12 ᚆηϯ࿘ናҢཀკ --- 22 კ 2.13 ࿘ናࡕႝηև౜ᐟวᄊҢཀკ --- 22 კ 2.14 ᐟวᄊႝη᚞ԅࡕวӀҢཀკ --- 23 კ 2.15 ϩှ࿘ናҢཀკ --- 23 კ 3.1 ჴᡍೕჄࢬำკ --- 33 კ.3.2 ௟ᅲԄႝηᡉ༾᜔ --- 34 კ 3.3 ऀ೸Ԅႝηᡉ༾᜔ --- 34 კ 3.4 ᚆη෧ᖓᐒ --- 35 კ 3.5 ܎ୗӀ᛼ሺ --- 35 კ 4.1 ၂Т a ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ 51 კ 4.2 ၂Т b ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ 51 კ 4.3 ၂Т c ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ 51 კ 4.4 ၂Т d ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ 52 კ 4.5 ၂Т e ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ 52 კ 4.6 ၂Т a ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ --- 53 კ 4.7 ၂Т b ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ --- 53

კ 4.8 ၂Т c ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ --- 54 კ 4.9 ၂Т d ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ --- 54 კ 4.10 ၂Т e ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ --- 55 კ 4.11 Ӛ၂Тϐ᝻൞ѳ֡ಈ৩კ --- 55 კ 4.12 ၂Т d ߄य़࿶ణႝዀೀ౛ࡕϐ TEM კ --- 56 კ 4.13 ᝻൞ᗭಈಈ৩ڙ߄य़ΚቹៜҢཀკ --- 56 კ 4.14 ၂Т a ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 57 კ 4.15 ၂Т b ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 57 კ 4.16 ၂Т c ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 57 კ 4.17 ၂Т d ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 58 კ 4.18 ၂Т e ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 58 კ 4.19.H2ᆶ NH3ႝዀೀ౛߻ڼԯᅹᆅ߄य़׎ᇮ --- 59 კ 4.20 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕ߄य़׎ᇮ--- 59 კ 4.21.O2ႝዀೀ౛߻ڼԯᅹᆅ߄य़׎ᇮ --- 59 კ 4.22 ڼԯᅹᆅӧόӕਔ໔ܭ 100W ϐ O2ႝዀೀ౛ࡕ߄ य़׎ᇮ(a)2min (b)5min (c)10min--- 60

კ 4.23 ڼԯᅹᆅӧόӕਔ໔ܭ 200W ϐ O2ႝዀೀ౛ࡕ߄ य़׎ᇮ(a)2min (b)5min--- 61

კ 4.24 ڼԯᅹᆅӧόӕਔ໔ܭ 100W ϐ NH3ႝዀೀ౛ࡕ ߄य़׎ᇮ(a)2min (b)5min (c)10min --- 62

კ 4.25 ڼԯᅹᆅӧόӕਔ໔ܭ 200W ϐ NH3ႝዀೀ౛ࡕ ߄य़׎ᇮ(a)2min (b)5min (c)10min --- 63

კ 4.26.CF4ᆶ CF4/O2ႝዀೀ౛߻ڼԯᅹᆅ߄य़׎ᇮ --- 64

კ 4.27. CF4ႝዀೀ౛ࡕڼԯᅹᆅ߄य़׎ᇮ --- 64

კ 4.28 ڼԯᅹᆅӧόӕਔ໔ܭ 300W ϐ CF4/ O2ႝዀೀ౛ ࡕ߄य़׎ᇮ(a)2min (b)5min (c)10min --- 65

კ 4.29 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕߏࡋᡂϯ--- 66 კ 4.30 ڼԯᅹᆅ࿶ O2ႝዀೀ౛ࡕߏࡋᡂϯ--- 66 კ 4.31 ڼԯᅹᆅ࿶ NH3ႝዀೀ౛ࡕߏࡋᡂϯ --- 67 კ 4.32 ڼԯᅹᆅ࿶ CF4ᆶ CF4 +O2ႝዀೀ౛ࡕߏࡋᡂϯ- 67 კ 4.33 ڼԯᅹᆅ࿶όӕф౗ϐ H2ႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)100W (b)200W --- 68 კ 4.34 ڼԯᅹᆅ࿶όӕф౗ϐ O2ႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)100W (b)200W --- 69

კ 4.35 ڼԯᅹᆅ࿶όӕф౗ϐ NH3ႝዀೀ౛ࡕϐ܎ୗӀ ᛼(a)100W (b)200W --- 70 კ 4.36 ڼԯᅹᆅ࿶ 300W ϐόӕႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)CF4ႝዀ (b) CF4+O2షӝႝዀ --- 71 კ 4.37 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕϐҡᏀϯࠔ፦კ--- 72 კ 4.38 ڼԯᅹᆅ࿶ O2ႝዀೀ౛ࡕϐҡᏀϯࠔ፦კ--- 72 კ 4.39 ڼԯᅹᆅ࿶ NH3ႝዀೀ౛ࡕϐҡᏀϯࠔ፦კ --- 73 კ 4.40 ڼԯᅹᆅ࿶ CF4ᆶ CF4+O2షӝႝዀೀ౛ࡕϐҡᏀ ϯࠔ፦კ --- 74 კ 4.41 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕϐ FTIR ϩ݋კ--- 74 კ 4.42 ڼԯᅹᆅ࿶όӕф౗ O2ႝዀೀ౛ࡕϐ FTIR ϩ݋ კ(a)100W (b)200W --- 74 კ 4.43 ڼԯᅹᆅ࿶όӕф౗ NH3ႝዀೀ౛ࡕϐ FTIR ϩ ݋კ(a)100W (b)200W --- 75 კ 4.44 ڼԯᅹᆅ࿶ CF4ႝዀೀ౛ࡕϐ FTIR ϩ݋კ --- 76 კ 4.45 ڼԯᅹᆅ࿶ CF4/O2ႝዀೀ౛ࡕϐ FTIR ϩ݋კ --- 76 კ 4.46 Ͼࢰ่ᄬҢཀკ --- 77 კ 4.47 ୖኧ a ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 77 კ 4.48 ୖኧ b ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ --- 77 კ 4.49 όӕୖኧԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ (a)ୖኧ c (b)ୖኧ d (c)ୖኧ e --- 78 კ 4.50 ୖኧ e εय़ᑈԋߏϐڼԯᅹᆅ߄य़׎ᇮ --- 79 კ 4.51 ୖኧ e εय़ᑈᆶ่ᄬԋߏڼԯᅹᆅϐ܎ୗϩ݋კ 79 კ 4.52 ܭ่ᄬύԋߏϐڼԯᅹᆅ --- 80 კ 4.53 ่ᄬύԋߏϐڼԯᅹᆅ࿶όӕਔ໔ NH3ႝዀೀ౛ ࡕϐ SEM კ(a)5min (b)10min--- 80

კ 4.54 ่ᄬύԋߏϐڼԯᅹᆅ࿶όӕਔ໔ O2ႝዀೀ౛ࡕ ϐ SEM კ(a)5min (b)10min--- 81

ಃ΋ക!ᆣፕ!

ᅹǴ΋ᅿ୷ҁ sp2ᗖ่ޑϡનӵԾฅࣚύϐҡᏀǵᢕҡǴࠅёа ׎ԋ೚ӭзΓᡋڻޑ่ᄬǶ1985 ԃǴ Harry Kroto ฻൳ՏࣽᏢৎӧӅ ӕࣴزҡᏀ਻ϯޑჴᡍਔǴว౜ C60 (buckminsterfullerene*ࣁ΋ᅿౚރ ่ᄬޑᅹ[1]ǴډΑ 1991 ԃ Iijima ճҔႝ۱ܫႝݤᇙբ C60ણ҃Ǵӧ ၸᘠ഍ཱུᅹ෇΢ޑූ੮ނਔว౜Α௔ԋᆅރޑᅹ่ᄬ[2]ǴӕਔΨࢂ ߈жനԖว৖ወΚޑ׷਑Ǻڼԯᅹᆅ(carbon nanotube)Ƕ җܭڼԯᅹᆅᏱԖ੝ਸޑ่ᄬǴӢԜځނ܄ǵϯ܄کႝ܄ޑ߄౜ ೿࣬྽ޑрՅǴхࡴଯቨుК(high aspect ratio)ǵଯᐒఓமࡋ(high

mechanical strength)ǵၨӳޑϯᏢᛙۓ܄(high chemical stability)[3-5]Ǵ

ନԜϐѦؼӳޑ൑ว৔(field emission)੝܄[6-7]Ψഢڙख़ຎǴҗܭ೭ ٤ᓬ౦ޑ܄፦Ǵӧ҂ٰڼԯᅹᆅёఈᏤΕߎឦϣೱጕ(interconnection) ύᔈҔǶҞ߻ϣೱጕמೌаልࣁЬा׷਑Ǵӧϟ፦Ͼ(via)ύ༤кል ࡕǴ೯த೿཮Ԗ΋ѳڶϯޑ؁ᡯǴҞ߻֡а CMP ࣁЬǴՠᅹᆅܭϟ ፦Ͼύԋߏࡕऩӕኬ٬ҔԜݤǴᅹᆅ཮Ӣ CMP ࣴᑃޑΚໆ೏רᚆ୷ ݈Զคݤ༤кܭϟ፦ϾύǶӢԜӧόӕ጗ፂቫ(barrier layer)΢ԋߏڼ ԯᅹᆅаϷԋߏᅹᆅࡕӵՖஒᅹᆅߏࡋߺอԿᆶϟ፦Ͼଯࡋ࣬ӕԋ ࣁख़ाޑࣴزБӛǴӵკ 1.1Ƕ ҁࣴزаڼԯᅹᆅࣁࣴز׷਑Ǵಃ΋೽ҽӧόӕޑ጗ፂቫхࡴޖ

඲༝(silicon wafer)ǵේϯ⑲(TiN)аϷේϯ✗(TaN)΢ԋߏڼԯᅹᆅǴ פрന፾྽ϐᙻ᝻൞߻ೀ౛ୖኧᆶᅹᆅԋߏୖኧǴ٠ᢀჸόӕ၂Тϐ ᝻൞߻ೀ౛کڼԯᅹᆅԋߏޑ࣬ᜢ܄Ƕ ಃΒ೽ҽ߾ࢂճҔಃ΋೽ϩ܌ளϐന٫ୖኧҔаԋߏڼԯᅹᆅǴ ٠ஒԋߏࡕϐᅹᆅϩձࡼа H2ǵNH3ǵO2ǵCF4ǵCF4/O2ϐႝዀ߄य़ ೀ౛Ǵᢀჸႝዀೀ౛ࡕᅹᆅޑ߄य़ࠠᄊᡂϯǴаϷᅹᆅࠔ፦ޑׯᡂǴ ᙖႝዀೀ౛ߺอڼԯᅹᆅߏࡋǴගٮ҂ٰᅹᆅӧϣೱጕᔈҔਔѳڶϯ ޑБݤǶ

კ 1.1 ᅹᆅܭϣೱጕᔈҔϐҢཀკ(a)ᅹᆅ༤кܭϟ፦Ͼύ (b)ႝዀೀ ౛ஒᅹᆅߏࡋߺอ٠Ϫሸ

ಃΒക ୷ᘵ౛ፕᆶЎ᝘ӣ៝

2.1 ڼԯᅹᆅޑ่ᄬ

ᅹ(carbon)ӧຼය߄ 4A ௼চηׇࣁ 6ǴӧԾฅࣚޑӸӧ׎Ԅவ႟

ᆢ่ᄬޑ C60Ǵ΋ᆢ่ᄬޑڼԯᅹᆅǵΒᆢ่ᄬޑҡᏀ(graphite)ǵΟ

ᆢ่ᄬޑᢕҡ(diamond)Ǵӵკ 2.1 ܌ҢǶځύڼԯᅹᆅӧ 1991 ԃҗ

Вҁ NEC ჴᡍ࠻ϐ໭৞ዂت(Sumio Iijima)ӧᇙ೷ C60ޑၸำύཀѦ

ว౜[2]Ƕᒿ๱ᔠෳמೌޑว৖ǴΓॺԖᐒ཮ёаჹڼԯᅹᆅޑ่ᄬ Ԗ׳ుΕޑΑှǴځ่ᄬЬाࢂ௔ԋ༝׎ޑҡᏀቫǴϣ৩ёவ 0.4nm ԿኧΜ nmǴѦ৩߾ऊҗ 1nm ډኧԭ nmǴߏࡋ߾җኧ µm ԿኧΜ µm ໔ Ǵ Զ җ ൂ ΋ ǵ ӭ ቫ ҡ Ꮐ ቫ ௔ Ԕ Զ ԋ ޑ ᅹ ᆅ ߾ ϩ ձ ᆀ ࣁ ൂ Ꮫ (single-wall)ǵӭᏛ(multi-wall)ڼԯᅹᆅǴკ 2.2 ࣁ Iijima ճҔऀ೸Ԅ ႝηᡉ༾᜔ᢀჸډϐӭᏛڼԯᅹᆅǶ ନԜϐѦൂᏛڼԯᅹᆅ٩ᏵҡᏀቫޑቨࡋᆶ௔ԔޑБӛǴόӕޑ ௔ԔБӛᅹᆅ߄౜рߎឦǵъߎឦǵъᏤᡏ฻όӕ੝܄Ǵ٩ҡᏀቫ௔ ԔБӛޑόӕǴёஒڼԯᅹᆅޑ׎ᄊεठ୔ϩࣁΟᜪǺ(1)armchairǵ (2)chiralǵ(3)zigzagǴӵკ2.3[8]Ƕௗ๱ёаճҔΒᆢҡᏀѳय़ӛໆn ک m߄Ң[9]Ǵӵკ2.4Ǵn=mਔࣁןශރ(arm-chair)ǹn=0܈m=0ࣁᒯᏁރ (zigzag)ǹځдҺՖϐnᆶmࣣࣁόჹᆀރ(chiral)ǴӢόӕ௔ԔБԄ܌ ೷ԋޑᅹᆅᖥ௽܄Ǵ཮٬ᆅᏛ΢ޑϤ༝ᕉԖόӕޑסԔำࡋǴ຾Զ೷

ԋϤ༝ᕉ΢҂Ⴋکᚈᗖ໔ႝη໺ᏤޑߔΚǴӢԜόӕޑᖥ௽܄೷ԋΑ ڼԯᅹᆅ໔Ꮴႝ܄፦ޑৡ౦ǹӄҗᅹচη܌ಔԋޑڼԯᅹᆅѝӢ่඲ ่ᄬಒ༾ޑৡ౦ߡԖᏤᡏᆶъᏤᡏϐόӕǴΨҗܭ೭ኬޑ੝܄Ǵӧጕ ቨा؃ຫٰຫλޑъᏤᡏπ཰္ǴڼԯᅹᆅӕኬڙډᢋҞǶ 2.2 ڼԯᅹᆅޑ܄፦ 2.2.1 ൑ว৔੝܄ ܌ᒏ൑ว৔(field emission)ջࢂӧଯႝ൑բҔΠǴᏤᡏ߄य़ޑԖ ਏૈምफ़եǴምᏛᡂᖓǴ٬ளႝηܰܭऀᒾૈምǴԶவᏤᡏ߄य़ܫр ႝηǶҗܭڼԯᅹᆅޑߏࡋᇻКޔ৩εЪڀཱུλޑӾᆄԔ౗Ǵ٩Ӿᆄ ܫႝޑ౛ፕǴѝाӧڼԯᅹᆅ΢ࡼϒཱུλϐႝᓸǴ൩ёаஒႝηҗӾ ᆄᐟวрѐǴ೷൩Αڼԯᅹᆅᓬ౦ޑ൑ว৔܄፦ǴҗW. A. de Heer ܌ ଺ϐჴᡍளޕ[10]Ǵڼԯᅹᆅӧ10V/µm ႝ൑ΠջёԖ0.1mA/cm2 ϐ ႝࢬஏࡋǴஒԜ΋੝܄ӧѳय़ᡉҢᏔ΢ǴόՠёаᕭλᡉҢᏔϐᡏ ᑈǴ׳ё෧Ͽ઻ႝໆǴӢԜڼԯᅹᆅ೏ຎࣁ࣬྽ڀԖወΚϐΠ΋ж൑ วᡉҢᏔ׷਑Ƕ 2.2.2 ᐒఓ܄፦ ᐒఓ੝܄Бय़Ǵҗڼԯᅹᆅ่ᄬٰ࣮ǴځϤ༝ᕉࢂҗԾฅࣚ ύനᛙۓϐᅹ-ᅹӅሽᗖ܌ಔԋǴӢԜڼԯᅹᆅᏱԖཱུ٫ϐΚᏢ܄

፦ǴҗࣽᏢৎޑኳᔕǴڼԯᅹᆅޑமࡋࢂ΋૓Ҕᒳޑ5७[11]Ǵڙډཱུ εᔈΚਔΨό཮ౢғ༟܄ᡂ׎܈྄ཞǶҗܭڼԯᅹᆅЁࡋཱུ༾λǴჴ ᡍਔाஒځڰۓǵΚໆໆෳᆶᡂ׎ၸำޑᢀჸ೿ߚத֚ᜤǴӢԜ೚ӭ ׷਑ᐒఓ܄፦ໆෳ܌ளኧᏵৡ౦ࣗεǴЪ٬Ҕޑଷ೛చҹǵीᆉБำ ԄϷჴᡍБԄϝԖׯ๓ޜ໔Ƕ ќѦڼԯᅹᆅமࡋଯǵࢋଉ܄ӳǵ፦ໆᇸޑᐒఓ܄፦ǴΨ٬Ѭቶ ࣁ೏ᔈҔӧፄӝ׷਑ϐ΢Ǵ׆ఈૈڗжҞ߻தـޑᅹᠼᆢᆶځѬፄӝ ׷਑ǴҞ߻ςԖࣽᏢৎஒڼԯᅹᆅᆶଯϩηǵߎឦ܈ഏᅶ׷਑షӝᇙ ԋӭᅿཥࠠፄӝ׷਑[12]Ǵ҂ٰ೭٤׷਑ஒё೏ቶݱᔈҔܭૐϼǵؓ ًǵ୯ٛπ཰΢Ƕ 2.2.3 Ꮴႝ܄ ᅹڼԯᆅڀԖᐱ੝ϐႝ܄ǴЬाࢂӢࣁڼԯᅹᆅϣࢬ୏ޑႝηڙ ډໆηज़ୱ(quantum confinement )܌ठǴӢԜႝηӧڼԯᅹᆅύځ໺ ᒡೲࡋᡂޑߚதޑזǴၲډ܌ᒏޑቸၰ໺ᒡ(ballistic transport)Ǵ٠ё ܍ڙࡐεޑႝࢬமࡋǴόӕܭ΋૓ߎឦᏤጕӧϼமޑႝࢬஏࡋΠ཮ว ғႝठᎂ౽(electro-migration)ǶќѦᅹᆅёаҗόӕޑҡᏀቫ௔ԔБ ԄளډόӕϐᏤႝ܄፦Ǵӵߎឦ܈ъᏤᡏϐ܄፦[13]ǴӢԜёᙖҗ௓ ڋڼԯᅹᆅޑҡᏀ่ᄬٰ௓ڋځᏤႝ܄ǴԜ੝܄ёఈ೏ᔈҔӧВᅌᡂ λޑႝηϡҹ΢Ƕ

2.2.4 ዗ᛙۓ܄ǵ዗Ꮴ܄Ϸ዗ᑩ๞܄

ճҔ዗ख़ϩ݋ݤ(thermogravimetric analysis, TGA)Ǵࣴزӧޜ਻ύ

ڼԯᅹᆅϷ C60 ޑ዗ᛙۓ܄Ǵว౜ӧ 700 кਔڼԯᅹᆅ໒ۈѨѐख़ ໆǴԿ 860 кਔڼԯᅹᆅֹӄᆶ਼ϸᔈғԋ CO Ϸ CO2ǴC60߾ӧ 600 кਔֹӄϸᔈֹΑǶ΋ѿڼԯᅹᆅᆅᏛࣁߚֹऍϐҡᏀѳय़Ǵ዗ख़ཞ Ѩ߾ӧ 400~500 к໒ۈǶ Ӣڼԯᅹᆅޑ่඲܄٫ǴЪ่඲੝܄ߏࡋࡐߏǴԖߚதεޑ඲਱ ਁ୏Ծҗ৩Ǵ዗ёᙖҗ඲਱ޑਁ୏Ԗਏޑ໺ሀрѐǴҗЎ᝘ൔᏤё ޕǴJ. Hone ฻Γว౜ൂᏛڼԯᅹᆅӧ࠻ྕΠϐ዗໺Ꮴ౗ёၲ 6000W/m-k [14]ǴࣗԿКᢕҡޑ዗໺Ꮴ౗ᗋଯ(3320W/m-k)ǴҗԜё ޕڼԯᅹᆅ዗໺Ꮴ܄ᓬ౦Ƕ ڼԯᅹᆅӧ዗ᑩ๞܄೭೽ҽޑ܄፦ΨᆶҡᏀϷᅹᠼᆢόӕǴځ዗ ᑩ๞܄և౜฻ӛ܄ᑩ๞Ǵ೭ࢂӢࣁ௔ԔޑҡᏀቫӧ৩ӛޑᑩ๞ڙډᅹ ᗖ่౐ڋǴԶቫᆶቫ໔ޑΥளґᅟΚׯᡂ܌೷ԋޑᑩ๞܄٠όٗሶܴ ᡉǶӧᅹᠼᆢᆶԖᐒଯϩηᐋિޑፄӝ׷਑ύǴ཮Ӣࣁᅹᠼᆢޑ዗ᑩ ๞ࢂߚ฻ӛ܄ǴԶଯϩηᐋિޑ዗ᑩ๞ࢂ฻ӛ܄ޑǴ೭ኬޑፄӝ׷ ਑Ǵ཮Ԗ዗ᑩ๞ό֡ϬǴ຾Զౢғ዗ᔈΚǶ೭ঁ೽ҽӵ݀٬Ҕڼԯᅹ ᆅڗжᅹᠼᆢǴё໩ճှ،Ƕՠڼԯᅹᆅ዗ᑩ߯ኧϼեǴӕਔёૈ೷ ԋᆶ୷׷໔ౢғ዗ᔈΚޑ໔ᚒǶ

2.3 ڼԯᅹᆅޑᇙഢБԄ

Ҟ߻೏ҔٰᇙഢڼԯᅹᆅϐБݤԖࡐӭǴՠനЬाϐᇙำԖǺ(1) ႝ۱ܫႝݤǵ(2)ႜ৔গߺݤǵ(3)ϯᏢ਻࣬؇ᑈݤ฻ΟᅿǴӵ߄2.1܌ ߄ҢǴځғߏচ౛೿ࢂעڀԖᅹচηϐϸᔈނǴճҔόӕБԄஒᅹচ ηख़ཥ௨ӈǴ٬ځևύޜ่ᄬǴаΠஒଞჹ΢ॊΟБݤ଺ᙁϟǶ

2.3.1 ႝ۱ܫႝݤ(arc discharge method)

ႝ۱ܫႝݤࢂ Iijima ӧӝԋ C60ਔคཀύว౜ᅹᆅ܌٬Ҕޑӝԋ БݤǴҭࢂനԐ೏٬ҔٰӝԋڼԯᅹᆅޑᇙำБݤǴკ 2.5 [2]ࣁႝ۱ ܫႝݤ೛ഢҢཀკǶ ԜݤЬाޑ୷ҁচ౛ࢂӧ໚ཱུᅹ෇ύЈబуߎឦ໽ϯᏊ(೯தࣁ ៓ǵႃǵᙻ)ࡕǴஒ᏾ঁس಍຾Չܜ੿ޜࡕ೯Εආ܄਻ᡏǴௗ๱ࡼа ፾྽ޑႝᓸаϷႝࢬǴӆஒ໚ཱུ฻ೲ጗ᄌ᎞߈഍ཱུǴ྽ٿႝཱུຯᚆى ୼λਔ(ऊ 1mm)Ǵ཮ܭٿཱུ໔཮ౢғ΋ଯྕ(ऊ 4,000K)ޑႝ۱Ǵӕਔ ஒ໚ཱུޑᅹᆶ໽ϯߎឦ຾Չଯྕ਻ϯ٠؈ᑈӧ഍ཱུҡᏀ෇߄य़ǴԜਔ ܌ளޑ഍ཱུ؈ᑈނջԖᅹᆅޑӸӧǶ໪ݙཀޑࢂǺٿႝཱུຯᚆѸ໪ߥ ࡭΋ۓޑ፾྽ຯᚆωܰғԋڼԯᅹᆅǴց߾ஒ཮ғԋεໆޑڼԯᅹಈ (carbon nanoparticles)Ƕҗႝ۱ܫႝݤ܌ளډޑᅹᆅᆅ৩ऊӧ 4~30nm ໔ߏࡋऊ 1µm ѰѓǴεӭࣁൂቫޑڼԯᅹᆅǶటճҔႝ۱ݤӝԋӭ ቫڼԯᅹᆅǴ߾όሡӧ໚ཱུҡᏀ෇ύబуߎឦ໽ϯᏊջёǶаႝ۱ݤ

ӝԋڼԯᅹᆅޑᏹբ܌ሡݙཀޑᡂኧЬाԖϸᔈਔޑᕉნǵႝཱུ׷ ਑ǵႝᓸελᆶႝཱུຯᚆ฻Ƕ

2.3.2 ႜ৔গߺݤ(laser ablation method)

ႜ৔গߺݤǴനԐҗ Rice εᏢ R. E. Smalley ჴᡍ࠻܌ว৖ϐמ ೌ[15]Ǵ೛ഢᄬ೷ӵკ 2.6[16]܌ҢǶᏹբচ౛ࢂճҔႜ৔Ӏ״ᆫขӧ ࿼ܭ 1200 кଯྕ᝗ϣޑҡᏀ༧΢Ǵҗܭᆫขౢғޑଯྕу΢ଯྕ᝗ ҁيྕࡋǴ٬ளҡᏀ΢ϐᅹ೏ᇃวрٰǴ܌਻ϯϐౢނӧ᝻൞ϐբҔ ΠғԋڼԯᅹᆅǴЪ೏ො਻஥р᝗ᡏǴ؇ᑈӧНհልԏ໣း࿼΢Ƕ೭ ٤ԏ໣ޑ୴ᑈᅹǴપϯࡕёаளډڼԯᅹᆅǴᗨฅԜݤౢໆόଯǴՠ ёаளډ 70ʘа΢ޑൂᏛڼԯᅹᆅǴᅹᆅޔ৩ऊ 5~20nmǴߏࡋёа ၲډ 10nm а΢ޑൂቫڼԯᅹᆅǴځ߄य़ؒԖߚ඲፦ᅹޑౢғǶ᏾ঁ ᇙำޑख़ाୖኧࣁྕࡋǵߎឦ᝻൞ޑԋϩکКٯϷආ܄਻ᡏޑࢬೲ ฻Ƕ

2.3.3 ϯᏢ਻࣬؈ᑈݤ(chemical vapor deposition, CVD)

Ԝݤന߃ࢂҔٰᇙբᅹᠼᆢǴࣁҞ߻ᇙբڼԯᅹᆅౢໆനεޑБ ݤǴёᔈҔܭε߄य़ᑈޑғౢ܈ᏱԖӭᅿౢނࠠᄊޑ੝፦Ƕځ೛ഢკ ӵკ2.7[17]܌ҢǶ୷ҁ೛ഢԖǺϲྕ᝗ǵҡमᆅǵးԖ᝻൞߻០ނ (catalyst precursor)ϐҡमՃ(quartz boat)ǴϸᔈЬाচ౛Ώࢂஒගٮᅹ

ྍޑᅹణϯӝނޑ਻ᡏ(ӵҘ₧CH4ǵΌᬨC2H2฻)Ǵ೯Εଯྕޑҡम ᆅ᝗ύϸᔈ(ऊ1,000ɴ1,200к)Ǵӧྕࡋ΢ϲޑӕਔ᝻൞߻០ނஒϸ ᔈԋࣁڼԯભϐ᝻൞ಈηǴᅹణϯӝނޑ਻ᡏ཮ӢଯྕԶ໽ϯϩှԋ ᅹǴ֎ߕӧ୷݈໽ϯᏊ߄य़Զ຾Չ؈ᑈԋߏǶ ճҔԜݤᇙբᅹᆅǴߎឦ໽ϯᏊתᄽ๱࣬྽ख़ाϐفՅǴ೚ӭࣴ ز֡ࡰрߎឦ܈ߎឦޖϯӝނޑᗭಈελ،ۓࢂցԋߏڼԯᅹᆅ [18]Ǵ྽໽ϯᏊᗭಈ୼λਔૈߏڼԯᅹᆅǴ܌ளډޑᅹᆅޔ৩ऊ25Կ 130nmό฻Ǵߏࡋ10Կ60nmа΢ǶԜᇙำБݤׯ๓Αႝ۱ܫႝݤύ ᅹᆅϼอǵեౢ౗ǵեપࡋϷଯᇙբԋҁ฻લᗺǶԶ໽ϯᏊᗭಈϼε ೯தѝૈߏрᅹᠼᆢǴቹៜᇙำϐচӢԖ᝻൞Ёκελ[19]ᆶᅿᜪǵ ྕࡋǵ਻ᡏϷࢬໆ[20-21]ǵϲྕೲ౗฻Ƕ 2.4 ڼԯᅹᆅޑԋߏᐒڋ ڼԯᅹᆅޑԋߏᐒڋԿϞϝ҂ۓፕǴаҞ߻ϯᏢ਻࣬؇ᑈݤӝԋ ᅹᆅٰ૸ፕǴ໽ϯᏊӧ೭ᅿӝԋݤٰᇥࣁനख़ाޑᜢᗖᗺǴ΋૓໽ϯ Ꮚ׷਑ࣁၸ෠ߎឦ(៓ Feǵႃ Coǵᙻ Ni)܈ځϯӝނǵӝߎ฻Ǵ໽ϯ

Ꮚૈஒᅹణϯӝނ(ӵҘ₧ CH4ǵΌᬨ C2H2)܈֖ᅹ਻ᡏ(΋਼ϯᅹ CO2)

໽ϯϩှԋᅹচηǴฅࡕᅹচηྋှډ໽ϯᏊᗭಈύǴ࿶җᘉණբҔ Կ໽ϯᏊᗭಈޑќ΋ᆄǴ྽ᅹӧ໽ϯᏊύϐڰྋᐚࡋၲډၸႫکਔջ ݋р׎ԋڼԯᅹᆅǶԶऩஒ໽ϯᏊаᇃᗓ܈ᘢᗓޑБԄᗓӧ୷݈΢Ǵ

җܭ໽ϯᏊᆶ୷݈ϐբҔΚόӕǴ྽໽ϯᏊᆶ୷݈ᗖ่ၨமਔǴ໽ϯ Ꮚ ԋ ߏ ڼ ԯ ᅹ ᆅ ࡕ ϝ ੮ ӧ ୷ ݈ ΢ Ǵ ᆀ ࣁ ۭ ೽ ԋ ߏ (Base growth

mechanism)[22]Ǵӵკ 2.8(a)ǹ྽໽ϯᏊӧ୷݈΢ϐߕ๱Κၨ১ਔǴ߾

཮೏݋рޑᅹܩଆǴ߾ࣁഗᆄԋߏᐒڋ(Tip growth mechanism)ӵკ 2.8(b)ǶќѦᅹচηޑᘉණΞёаϩԋ೸ၸ໽ϯᏊ܈ࢂҗ໽ϯᏊ߄य़ ٿᅿǴаΠᙁॊ೭ٿᅿᐒڋǶ 2.4.1 ᅹ࿶җ໽ϯᏊᘉණ ᅹణϯӝނӧߎឦ໽ϯᏊ߄य़຋ှғԋᅹϷణ਻Ǵӵკ 2.9[23] ܌ҢǴᅹচη࿶җ໽ϯᏊᗭಈᘉණԿќ΋ᆄǴҗܭᅹణϯӝނϐ຋ှ ࣁܫ዗ϸᔈǴٯӵ C2H2຋ှ܌ܫрޑ዗ࣁ 223.6 kJ/molǴᅹྋΕᙻύ ܌ܫрޑ዗ࣁ 40.5 kJ/molǴӢԜӧ໽ϯᏊᗭಈύ཮ౢғ΋ྕࡋఊࡋ, ԶᅹϐڰྋໆΞڙྕࡋቹៜǴӢԜྕࡋఊࡋޑӸӧ٬ளᅹӧၨհޑ΋ ᜐ݋рǴΞᅹϐ݋рࣁ֎዗ϸᔈǴ٬ᅹᆅளаόᘐԋߏǴޔډ໽ϯᏊ ᗭಈ೏ࢥϯࡕଶЗғߏǶ 2.4.2 ᅹ࿶җ໽ϯᏊ߄य़ᘉණ җ Oberlin[24-25]Ϸ Baird [26]ගрϐғߏᐒڋǴᅹణϯӝނݮ๱ నᄊߎឦ᝻൞ᗭಈ߄य़ᘉණǴӧ᝻൞ᆶ୷׷ޑௗ᝻فೀϩှǴ׎ԋന ߃ޑᅹਡǴࡕុޑᅹణϯӝނ཮ӧ᝻൞ᆶ୷׷ௗ᝻فᜐጔᝩុϩှǶ

ᅹቫݮ๱᝻൞ᗭಈୁӛߏǴᅹᠼӢԜ׎ԋǴӵკ 2.10 [27]܌ҢǶ 2.5 ڼԯᅹᆅܭႝηౢ཰ϐᔈҔ ъᏤᡏπ཰ว৖ۈಖࢂර๱ϡҹЁκຫٰຫλǴфૈຫٰຫӭ٠ फ़եғౢԋҁ೭ঁεБӛ߻຾ǴႣीډ 2016 ԃ΋ঁႝηϡҹӵႝ඲ ᡏ(transistor)Ǵऊ໻Ԗ 25nm[28]Ƕӧ೭ኬޑλЁκΠǴӵڼԯᅹᆅϐ ႝ඲ᡏ[29-30]ǵڼԯᅹᆅጕ[31]฻Ǵ೿ࡰрڼԯᅹᆅᔈҔܭڼԯЁκ ႝηႝၡև౜рؼӳႝ܄ǶITRS ٠Ⴃෳ 2013 ԃϡҹύЍႝࢬஏࡋஒ ཮ၲډ 3.3×106A/cm2ǴډҞ߻ࣁЗΨ໻Ԗڼԯᅹᆅёа܍ڙ೭ኬ΋ঁ ႝࢬஏࡋॶǴࣗԿڼԯᅹᆅёа܍ڙ 109A/cm2 ޑႝࢬமࡋǴу΢ᅹ ᆅޑ዗Ꮴ߯ኧ(thermal conductivity)ࢂᢕҡޑٿ७Ǵልޑ 15 ७Ǵණ዗ ޑਏ౗׳ࢂ፾ӝҔܭ༾ႝηౢࠔύǴ߄ 2.2[32]ӈрڼԯᅹᆅᔈҔܭ ༾ႝηϡҹ΋٤ख़ाޑ੝܄Ƕ ߈൳ԃ׳עڼԯᅹᆅЇΕߎឦϣೱጕ(interconnection) [33-36]Ǵ٣ ჴ΢ᅹᆅޑႝߔॶ٠όեǴՠЁκᡂλǴ໺಍ޑߎឦ཮Ӣ߄य़܈ࢂ඲ ಈ(඲ࣚ)ޑණ৔ਏᔈ(surface and grain scattering effect)Ǵځႝߔॶ཮ז ೲޑ΢ܹ[37]Ǵ೭ᅿ௃׎ӆԛँᡉрڼԯᅹᆅӧว৖༾λႝηϡҹࣁ ΋ख़ᗺࣴز׷਑Ƕ

2.6 ႝዀޑ୷ҁচ౛[38-40] ႝዀ(plasma)ёаቶݱޑۓကࣁڀԖ฻ໆޑ҅ႝ಻ᆶॄႝ಻ޑᚆ η਻ᡏǴ׳ᆒዴ΋ᗺٰᇥǴႝዀࢂԖ๱஥ႝᆶύ܄ಈηϐ೽ϩᚆηϯ ਻ᡏǴ೭٤ಈηޑ໣ᡏՉࣁջࣁႝዀҁيǶԾฅࣚύǴӵӦౚѦൎޑ ႝᚆቫǵϼ໚߄य़ǵ܈ࢂࢃሞ਻ᡏύǴࣣӸӧ๱ႝዀǹځჴႝዀӧࡐ Ԑ൩໒ۈ٬ҔܭВதғࢲύǴӵВӀᐩϣޑ਻ᡏӧ٬Ҕਔ൩ࢂႝዀޑ ΋ᅿᔈҔǶ 2.6.1 ႝዀޑౢғ ೯தႝዀޑғԋ೿ሡाᙖշѦࣚޑૈໆٰྍǴӧъᏤᡏޑᇙำύ Ԗ٬Ҕޔࢬ(DC)ୃᓸس಍аϷ৔ᓎ(RF)ႝዀྍǴځύ৔ᓎႝዀྍനࣁ දၹ٬ҔǴΨࢂҁЎ܌٬ҔϐႝዀྍǴӧԜуаϟಏǶӵკ 2.11 ܌ ҢǴӧ੿ޜ࠻ύܫΕٿѳՉႝཱུǴ߾೭ٿঁႝཱུёаຎࣁႝ৒Ꮤύϐ ႝཱུǴ྽Ԝٿႝཱུύ೯Ε৔ᓎϐଯႝᓸࡕǴٿႝཱུύ໔཮ғԋ΋Ҭࢬ ႝ൑Ǵѝा৔ᓎႝᓸ୼εǴԾҗႝηߡ཮ڙډ೭ႝ൑ޑቹៜ຾Զ೏у ೲǴԜԾҗႝηளډى୼ϐૈໆࡕǴ཮ᆶϸᔈ࠻ύϐচη܈ϩη࿘ና ٰౢғᚆη܈ࢂќ΋ঁԾҗႝηǴ೭ኬᚆηϯޑ࿘ና٬ளϸᔈ࠻ύࡐ זޑкᅈႝηᆶᚆηǴΨ൩ࢂкᅈΑႝዀǴ೭ኬᚆη࿘ናౢғႝηᆶ ੃઻ႝηޑೲ౗࣬฻ਔǴԜ΋ႝዀ൩ೀܭᛙۓޑރᄊǶ

2.6.2 ႝዀޑ࿘ና ႝዀޑᚆη࿘ናၸำёૈࣁႝηᆶύ܄ϩηǵύ܄ϩηᆶᚆηǵ ᚆηᆶᚆηǵႝηᆶᚆηϐ໔ޑ࿘ናǴёаᇥҺՖޑ࿘ናӧႝዀ္೿ ԖёૈวғǴځύԖΟᅿ࿘ናനࣁख़ाǺᚆηϯ࿘ና(ionization)ǵᐟ วک᚞ԅ࿘ና(excitation-relaxing)ǵϩှ࿘ና(dissociation collision)Ƕ 2.6.2-1 ᚆηϯ ྽ႝηᆶϩη܈চηวғ࿘ናਔǴѬ཮ஒ೽ϩૈໆ໺ሀ๏ڙډচ η܈ࢂϩηਡ܌״ᑛϐॉၰႝηǴӵ݀ॉၰႝηᕇளى୼ޑૈໆёа ಥᚆ״ᑛᚆ໒ॉၰԋࣁԾҗႝηǴ೭ኬޑ࿘ና൩ᆀࣁᚆηϯǴӵკ 2.12܌ҢǶᚆηϯ࿘ናё߄Ңࣁ 2 eAoA e ځύeж߄ႝηǴA ж߄ύ܄চη܈ϩηǴA߾߄Ң҅ᚆηǶ 2.6.2-2 ᐟวᆶ᚞ԅ࿘ና ӵკ 2.13ǴԖਔॉၰ΢ޑႝη٠ؒԖவԾҗႝηޑ࿘ናᕇளى୼ ޑૈໆٰ଒ಥচηਡޑ״ᑛǴՠ࿘ና܌໺ሀޑૈໆϝฅى୼٬ளॉၰ ႝη៌ϲډૈໆၨଯϐॉၰቫǴ೭ኬޑၸำᆀࣁᐟวǴёа߄Ңࣁ * eAoA e ځύ * A ߄ҢӧᐟวރᄊΠϐAǴ߄ҢѬԖ΋ঁႝηӧૈໆၨଯϐ ॉၰቫǶ

ӵკ 2.14Ǵӧᐟวᄊচηև౜όᛙۓޑރᄊǴҗܭӧᐟวᄊॉၰ ޑႝηคݤӧԜૈໆၨଯޑॉၰଶ੮ϼΦǴଭ΢൩཮௞ӣനեޑૈ໘ ܈ࢂ୷ᄊǴ೭ঁၸำᆀࣁ᚞ԅǶ྽ᐟวᄊޑႝηӣډ୷ᄊਔǴচҁӭ Ꭹޑૈໆ཮аวӀޑБԄញܫрٰǴёа߄Ңࣁ * A oA h Q ځύhQ ߄ҢӀηૈໆǴhࣁᇀ॔լதኧǴQ ࣁ،ۓႝዀวӀᚑՅ ޑวӀᓎ౗ǴόӕޑচηԖόӕޑૈ໘ǴӢԜวӀޑᓎ౗Ψ೿ό࣬ ӕǴ೭ᇥܴΑࣁՖόӕ਻ᡏϐႝዀ཮և౜όӕޑᚑՅǶ 2.6.2-3 ϩှ ӵკ 2.15Ǵ྽ႝηᆶϩη࿘ናਔǴऩናᔐ໺ሀޑૈໆКϩηᗖ่ ޑૈໆଯǴ൩ёаѺᘐϩηޑϯᏢᗖ٠ౢғԾҗ୷(free radicals)Ǵ߄ ҢӵΠ eABoA B e   ځύABࢂϩηǴAکBࣁϩှ࿘ናᖂԋޑԾҗ୷ǶҗܭԾҗ୷ӧ ϯᏢ΢ࢂߚதࢲዃǴ཮ཟځдύ܄চηᆶϩηޑႝηٰ׎ԋᛙۓޑϩ ηǴӢԜёаߦ຾ᇑڅᆶϸᔈ࠻ύޑϯᏢϸᔈǶ 2.6.3 ႝዀޑᔈҔ π཰ᔈҔ΢ǴёճҔځಈηޑଯ዗୏ૈǴаЇว዗کᑼӝϸᔈԶ ౢғૈྍǹ܈ճҔѦуႝᅶ൑௓ڋಈη໦୏ރᄊǴٰᇙ೷ႜ৔܈ځд

ႝᅶݢྍǴջӚࠠচηǵϩηǵᚆηǵႝη״Ƕ׳ёޔௗճҔځ໔ಈ ηޑଯૈໆᆶࢲዃϯᏢ܄፦வ٣ϯᏢӝԋǵ׷਑ᇙ೷ǵ߄य़ೀ౛฻π ཰ᔈҔǴࣁ߈ШइъᏤᡏ׷਑ᇙ೷ύόё܈લޑख़ाБԄǴӵᘢ৔ᗓ ጢ(sputter)ǵϯᏢ਻࣬؇ᑈ(CVD)ǵᚆηᇑڅ(RIE)฻ӧъᏤᡏύख़ा ޑᇙԋᐒѠǶନԜϐѦǴҭёճҔႝዀس಍ύᐟᄊচηǵϩηǵᚆη ܫ৔рޑεໆӀηٰᇙ೷ӚᅿӀྍǴӵᚆηႜ৔ǵ۱ӀᐩǴ܈ᕭλԿ ༾ԯЁࡋᇙ೷ႝዀѳय़ᡉҢᏔ฻Ƕ 2.7 ڼԯᅹᆅϐႝዀࡕೀ౛ җܭڼԯᅹᆅӧԋߏϐࡕǴ࿶த֖Ԗ೚ӭᚇ፦ǴӢԜӵՖஒڼԯ ᅹᆅપϯǴаයᅹᆅԖന٫ޑਏૈ΋ޔ೿ࢂࣽᏢৎठΚࣴزޑ೽ҽǶ ӢԜ೚ӭࡕೀ౛(post-treatment)ޑБݤхࡴԖǺճҔϯᏢϸᔈޑБ Ԅǵஒᅹᆅᚼ៛ܭႝηᒟ৔ǵႝዀǵႜ৔ύаѐନᚇ፦[41-43]ǴԶ೭ ٤БݤύΞаႝዀനڙᢋҞǶаႝዀೀ౛೯தёаၲډаΠ൳ᅿਏ ݀Ƕ२ӃǴႝዀೀ౛ёа੃ନᅹᆅԋߏࡕූ੮ܭ߄य़ϐߚ඲፦ᅹ (amorphous carbon)аϷ΋٤ҡᏀϯޑᚇ፦ᗭಈǴԛϐǴ Ԗᐒ཮ёа ׯᡂڼԯᅹᆅޑ่ᄬǴٯӵёа෧ϿڼԯᅹᆅϐᆅᏛǴനࡕǴёаஒ ߕ๱ܭڼԯᅹᆅ΢ޑ΋٤ᗖ่(dangling bond)੃ନ[44-46]ǶҞ߻ճҔ ႝዀ຾Չڼԯᅹᆅࡕೀ౛ε೽ϩ೿໣ύӧׯ๓ڼԯᅹᆅޑ൑ว৔੝ ܄Ƕхࡴ٬Ҕόӕޑϸᔈ਻ᡏǵф౗ǵႝዀྍ฻[47-49]Ƕ

კ 2.1 ᅹޑѤᅿ่ᄬ(a)ҡᏀ(b)ᢕҡ(c)C60(d)ڼԯᅹᆅ

კ 2.3 ൂቫڼԯᅹᆅ(SWNT)่ᄬҢཀკǶ(a) armchair ᅹᆅǹ(b) chiral ᅹᆅǹ(c) zigzag ᅹᆅ

კ 2.5 ႝ۱ܫႝݤ೛ഢკ

კ 2.6 ႜ৔਻ϯݤ೛ഢკ

კ 2.8 Grujicic ගрٿᅿ(a)ۭ೽ԋߏ(Base growth) (b)ഗ೽ԋߏ(Tip growth)ኳᔕᅹᆅԋߏኳࠠ

კ 2.10 ᅹ࿶җ໽ϯᏊ߄य़ᘉණᐒڋҢཀკ

კ 2.12 ᚆηϯ࿘ናҢཀკ

კ 2.14 ᐟวᄊႝη᚞ԅࡕวӀҢཀკ

߄ 2.1 ᇙഢڼԯᅹᆅБԄКၨ

ಃΟക ჴᡍБݤᆶϩ݋

3.1 ჴᡍࢬำ ճҔ༾ݢႝዀϯᏢ਻࣬؇ᑈس಍(MP-CVD)ӧόӕޑ጗ፂቫ΢၂ ๱פр߻ೀ౛аϷڼԯᅹᆅന٫ԋߏୖኧǴӆஒԋߏࡕϐڼԯᅹᆅࡼ аႝዀೀ౛Ǵ٠аሺᏔϩ݋ᅹᆅ೏όӕ਻ᡏᆶόӕф౗ϐႝዀೀ౛ࡕ ઇᚯࡕޑ௃׎Ǵനࡕஒ჋၂рϐന٫ୖኧ঺Ҕܭ่ᄬύԋߏڼԯᅹ ᆅǴයఈёаԖਏޑၲډߺอڼԯᅹᆅǴӵკ 3.1Ƕ 3.2 ჴᡍᆶϩ݋ሺᏔ 3.2.1 ჴᡍ׷਑ (1)Ⴂ׷(target)Ǻᙻ(Nickel)Ⴂ׷Ǵϡનԋϩ: 99.99% (2)୷׷(substrate)ǺP ࠠ(100)ޖ඲༝୷݈ (3)೯Ε਻ᡏǺH2 (ణ਻): 99.99%ǵCH4(Ҙ₧): 99.99% (4)᝻൞ǺNi(Nickel)Ǻ99.99% (5)጗ፂቫǺNiǴTiNǴTaN 3.2.2 ჴᡍሺᏔ 3.2.2-1 ༾ݢႝዀϯᏢ਻࣬؈ᑈس಍(MP-CVD) 1.ࠠဦǺASTeX PDS-17 System 2.ሺᏔфૈǺЬाࢂճҔଯྕΠǴஒ֖ᅹ਻ᡏ࿶җ໽ϯ຋ှࣁᅹচ

ηǵH2܈ځд਻ᡏǴҔаӝԋڼԯᅹᆅǶ

3.MP-CVDኳԄ(Microwave-Plasma, ༾ݢႝዀ)

(1)ԋߏ׷਑ǺDiamond film, Nanotube (2)඲ТЁκǺ4 әаΠ (3)ᇙำ਻ᡏǺH2, Ar, O2, N2, CH4 3.2.2-2 ႝዀᇶշϯᏢ਻࣬؇ᑈس಍(PE-CVD) 1.ࠠဦǺୖྣ߄ 3.1 2.ሺᏔфૈǺёஒ੝ۓ਻ᡏ࿶җ໽ϯ຋ှӆ࿶ϯᏢϸᔈǴёගٮեྕ ϐ SiO2Ϸ Si3N4฻ᖓጢ؇ᑈаϷႝዀೀ౛Ƕ 3.2.2-3 Ծ୏ϯӀߔ༡թϷᡉቹس಍(Track) 1.ࠠဦǺClean Track MK-8 2.ሺᏔфૈǺߔᏊᚼӀ߻༡թܭ඲༝߄य़ǴаϷᚼӀࡕკਢޑᡉቹǶ

3.2.2-4 I-LineӀᏢ؁຾ᐒ(I-Line Stepper)

1.ࠠဦǺCanon FPA-3000i5+ Stepper

3.2.3 ϩ݋ሺᏔ

3.2.3-1 ௟ඔԄႝηᡉ༾᜔(SEM)

௟ඔԄႝηᡉ༾᜔ࢂаႝη״ჹ၂Т଺௟ඔǴЬाޑୀෳߞဦࣁ Βԛႝη(secondary electrons)ǵϸ৔ႝη(backscattered electrons)ǵऀ ೸ႝη(transmitted electron)฻ǴሺᏔӵკ 3.2 ܌ҢǶ 1.ࠠဦᆶೕ਱Ǻୖྣ߄ 3.2 2.ሺᏔфૈǺЬाҔٰᢀჸ၂Т߄य़܈ᕵϪय़׎ᇮ(topography)ቹႽᢀ ჸϷځдႝ܄܄፦ϩ݋Ƕ 3.2.3-2ऀ೸Ԅႝηᡉ༾᜔(TEM) ऀ೸Ԅႝηᡉ༾᜔ڀԖཱུଯޑऀ೸ૈΚϷଯှ݋ࡋǴςԋࣁ׷਑ ࣽᏢࣴز΢ཱུԖਏޑπڀϐ΋ǶਥᏵႝηᆶނ፦բҔ܌ౢғޑૻဦǴ ऀ೸Ԅႝηᡉ༾᜔ϩ݋Ьाୀෳޑၗ਑ёϩࣁΟᅿǺऀ೸ႝηǵቸ܄ ණ৔ႝη(Elastic Scattering Electron)ǵX-ray(EDS)฻ǴሺᏔӵკ 3.3 ܌ ҢǶ

1.ࠠဦᆶೕ਱Ǻୖྣ߄ 3.3

2.ሺᏔфૈǺගٮ׳ଯޑှ݋ࡋǴёа׳మཱޑᕕှ၂Т߄य़ϐ׎ᇮ ࣁՖǶ

3.2.3-3 ᚆη෧ᖓᐒ(Ion Miller) ፾Ҕܭᇙբ TEM ၂Тޑس಍Ǵёଞჹᐉᘐय़ޑ TEM ၂Т຾Չ ࣴᑃǴ२Ӄஒ၂ТϪԋऊࣁ 3.5mm×5mm ελޑ၂ТٿТǴஒϪӳϐ ၂Та AB ጤᗹӳǴӆஒϪപӳϐλ၂Та዗ᅙጤᗹຠܭ࣒ዟТ΢Ǵ аಉಒόӕϐࣳરᄌᄌࣴᑃԿऊ 25µmǴຠ΢ልᕉ(Бߡ၂Т৾ڗ)ࡕ ڗΠǴܫ࿼ܭ෧ᖓᐒύа 8°ډ 4°ᅌ຾ϐفࡋߺᖓԿᇑऀ၂ТջёǶ ሺᏔӵკ 3.4 ܌ҢǶ 3.2.3-4 চηΚᡉ༾᜔(AFM) ࣬ၨܭځдБԄޑᡉ༾᜔ǴԜݤόሡाӀྍǵႝη״ǴځᏹբБ ԄࢂճҔ΋Ѝཱུಒޑ௖ଞǴݮ׷਑߄य़຾Չ௟ඔǴၸำύऀᒾႝࢬ (tunneling current)Ӣࣁ߄य़ଯեଆҷόӕԶᡂϯԋႽǴ࿶ႝတၮᆉё ள׷਑߄य़ޑΟᆢკ׎Ƕ 1.ࠠဦᆶೕ਱Ǻୖྣ߄ 3.4 2.ሺᏔфૈǺගٮ၂Т߄य़ 3D ޑკ׎ǵ߄य़ಉᕫࡋ฻Ƕ 3.2.3-5 ܎ୗӀ᛼ሺ(Raman Spectrum) ҁϩ݋௦Ҕϐ܎ୗӀ᛼ሺ٬Ҕො(Ar)ᚆηႜ৔Ǵႜ৔Ӏݢߏࣁ 514.5 nmϐᆘӀǴሺᏔӵკ 3.5 ܌ҢǴೕ਱ୖـ߄ 3.5Ǵໆෳڼԯᅹ ᆅҡᏀϯำࡋᗖ่ϩ݋Ǵന߃؁ΨࢂനޔௗޑሺᏔǶځӀ᛼ሺϐϩӀ

চ౛ӵΠǺ྽Ε৔Ӏ࿶੟ᕳ຾ΕӀ᛼ሺࡕǴᒿջҗຬᕉ᜔य़ (toroidal mirror) ஒᏤΕϐӀਠྗࣁѳՉӀǴ࿶җӀ࢐٩ݢߏϒаϩӀǹϩӀ ࡕ࿶ၸᆫข᜔׫৔ӧΒᆢޑ L-N2CCD ତӈ΢ǴനࡕҗᜪК-ኧՏᙯ ඤьஒኧᏵ໺ԿႝတǴҗ೬ᡏᘏڗૻဦှ݋ϐǶऩаᙁൂޑ΋ࢤ၉ٰ ௶ॊǴ܌ᒏޑ܎ୗਏᔈջࢂӀჹϩηޑ΋ᅿ“ߚቸ܄ණ৔ȹ(inelastic scattering) ޑՉࣁǹջӀ״(ૈໆ)ྣ৔ډ΋ঁኬࠔǴӀη཮ᆶϩη࿘ ናǴନΑ୏ໆԖׯᡂǴૈໆΨ཮ҬඤǴԶ܎ୗණ৔ѝෳໆӀηૈໆޑ ׯᡂǴΨ൩ࢂϩηޑૈ໘ৡǶаݢኧৡ(wave number)ޑׯᡂٰ߄ҢǴ ջࣁ܎ୗՏ౽(Raman Shift)Ƕ ܎ୗӀ᛼ሺӧϩ݋ڼԯᅹᆅҡᏀϯ(܈ߚ඲፦ϯ)ϐำࡋǴҭջԜ ሺᏔதҔܭղᘐڼԯᅹᆅޑࠔ፦Ƕ΋૓ԶقǴӧϩ݋ᅹᆅਔ೯த཮Ԗ ٿঁӾঢ় D-band аϷ G-bandǴD-band ೯தӧݢኧࣁ 1350cm-1ߕ߈ р౜ж߄๱ڼԯᅹᆅ่ᄬલഐӸӧǴջҡᏀ่ᄬࣁอำԖុ܈คុ (disorder)่ᄬǴ܈ࢂ΋٤όપނᗭಈޑ֎ߕ೿཮೷ԋ D-band ޑமࡋ ᡂϯǹG–band ߾೯தр౜ӧݢኧࣁ 1580cm-1ߕ߈Ǵж߄ڀ่඲܄܈ Ԗុߏำ่ᄬ(crystalline or order)ϐҡᏀ่ᄬǴΨ൩ࢂڼԯᅹᆅ่ᄬ ׎ԋǶ೯த٬Ҕ D-band ᆶ G-band மࡋКॶ(I_D/I_G)ٰඔॊڼԯᅹᆅҡ Ꮐ่ᄬޑ่඲ำࡋǴΨ൩ࢂᇥǴҗКॶޑଯեջёޕၰڼԯᅹᆅҡᏀ ่ᄬԖុᆶคុ่ᄬޑໆࣁӭϿǴ଺ࣁۓ܄ޑϩ݋ǶҞ߻а໽ϯᏊ٠

ճҔϯᏢ਻࣬؇ᑈݤ܌ளډڼԯᅹᆅޑI_D/I_GКॶऊӧ 0.5 ~ 2 ໔Ǵၨ ٫ޑॶᔈӧ 1 аΠǶ 3.2.3-6 ഡճယᙯඤआѦጕϩ݋ሺ(FTIR) Ԝϩ݋೛ഢচ౛ࣁϩ݋ሺჹ၂ТࡼаआѦጕᒟ৔Ǵ၂Тჹܭᒟ৔ ᓎ౗֎ԏ௃׎Ǵ߄Ңࣁϩηਁ୏܌֎ԏޑૈໆǴӕਔᙖҗϩηਁ୏ౢ ғޑݢঢ়Ǵղձϩη໔ޑᗖ่ᅿᜪǶआѦጕӀ᛼Ꮲࢂࣴزࢌ΋ϯᏢϩ η܈ϯᏢނᅿӢ֎ԏ(܈ว৔)आѦጕᒟ৔Ǵӧࢌ٤ਁ୏ኳԄΠౢғਁ ୏܈ਁ୏΋ᙯ୏ૈໆޑᡂϯǶ ڼԯᅹᆅԋߏࡕх֖ᅹᆅ໔ϐᗖ่Ǵӧаόӕ਻ᡏႝዀೀ౛ࡕǴ ճҔഡճယᙯඤआѦጕϩ݋ሺϐӀ᛼ϩ݋Ǵ௖૸όӕ਻ᡏ࿶ၸႝዀှ ᚆࡕჹᅹᆅϐቹៜǴ௟ᅲޑӀ᛼ӵ߄ 3.6[50]Ƕ 3.3 ჴᡍ؁ᡯ 3.3.1 ၂Тྗഢ ҁࣴزа P ࠠ(100)ޖ඲༝ࣁ୷݈Ǵ࿶ RCA మࢱࢬำࡕǴа Metal

PVD(Materials Research Corporation, American)ϩձᗓ΢᝻൞ቫᆶ጗ፂቫǺ

Ni(70Å)/TiN(200Å)аϷ Ni(70Å)/TaN(200Å)Ƕӧ่ᄬԋߏᅹᆅޑ่ᄬ

೽ҽ߾а PE-CVD ܭ᝻൞ቫ΢ԋߏ SiO2Ǵԋߏࡕ่ᄬࣁ SiO2(5000Å)/

stepper)ۓကკࠠࡕǴа Metal Etcher(Anelva ILD-4100 helicon wave etcher, Japan)ᇑڅрკ׎٠ѐନӀߔࡕֹԋ၂ТǶ

3.3.2 ᝻൞߻ೀ౛ᆶڼԯᅹᆅԋߏ (1)२Ӄஒᗓӳ᝻൞(Ni)ϐޑ၂ТܫΕ๚ᡏ(chamber)ၩѠ΢Ǵᜢഈϸᔈ ࠻ߐᆶࢻ਻ሚߐǶ (2)௴୏ᐒఓᔅ੅ܜ੿ޜᓸၲ 10-3 torr аΠǴԜਔஒణ਻ࢬໆሚѺ໒ஒ ణ਻ଌΕϸᔈ࠻ϣǶ (3)໒௴༾ݢႝྍٮᔈᏔ່Ǵ٠Ъ೛ۓ਻ᡏᆶࢬໆ(ణ਻ǵҘ₧)Ǵ೯Ε ణ਻Ǵׯᡂጷጸሚ௓ڋϸᔈ࠻ϣޑᓸΚၲ፾྽ᓸΚǴ೛ۓ༾ݢф౗ (Watt)Ǵаణ਻ᗺᐯႝዀǴճҔణႝዀ߻ೀ౛᝻൞߄य़Ƕ (4)೛ۓπբᓸΚǴ೯ΕҘ₧ǵේ਻܈ణ਻Ƕӆ೴ᅌගܹ༾ݢф౗Կ ೛ۓॶǴ٠ᒿਔፓ᏾ፓ࿯່ᗖ௓ڋф౗ǴᗉխႝዀӢϼଯф౗Զᅝ ௞Ǵ฻ႝዀౚᛙۓǴϐࡕջё໒ۈ຾ՉᅹᆅԋߏǶ (5)ၲႣۓԋߏਔ໔ࡕǴᜢഈ༾ݢྍϷϸᔈ਻ᡏǴஒϸᔈ࠻ܜ੿ޜǴ ٬၂Тܭ੿ޜޑᕉნΠհࠅԿ࠻ྕǴஒᓸΚ௓ڋሚᜢډ႟ࡋ٠೛ۓ ᜢ௞ᐒఓᔅ੅ǴջёԾ୏ઇ੿ޜڗр၂ТǶ

3.3.3 ႝዀೀ౛ (1)ஒڼԯᅹᆅ၂ТܫΕ๚ᡏϐၩѠ΢Ǵᜢഈሚߐ฻ࡑ୏ᐒఓᔅ੅ܜ ੿ޜԿ 0.3torrǶ (2)٬ҔᐒఓЋᖉஒڼԯᅹᆅܫΕϸᔈ࠻ύǴ຾Չႝዀೀ౛Ƕ (3)ҁԛჴᡍЬाа H2ǵNH3ǵO2ࣁЬǴϩձа 100ǵ200Watt ϐႝዀ ф౗຾Չႝዀೀ౛ 2ǵ5ǵ10 ϩដǶ (4)ќѦᗋ჋၂а 300Watt ϐ CF4ᆶ CF4/O2షӝႝዀӕኬ຾Չ 2ǵ5ǵ 10 ϩដϐႝዀೀ౛Ƕ (5)ֹԋႝዀೀ౛ࡕǴࡑઇֹ੿ޜջёஒ၂ТڗрǶ 3.3.4 ၂Тϩ݋ ֹԋჴᡍࡕǴճҔ SEM ᆶ TEM ᢀჸ၂Т߄य़ᅹᆅ࿶ႝዀೀ౛ ࡕઇᚯޑ௃׎ǴAFM ߾Ҕаϩ݋߻ೀ౛ࡕ᝻൞ᗭಈޑϩѲ௃׎ǴFTIR ک XPS ࣁϩ݋ႝዀೀ౛ࡕࢂցԖҺՖޑϯᏢᗖ่ғԋǴRaman ዴᇡ ᅹᆅႝዀೀ౛߻ࡕᅹᆅҡᏀϯำࡋԖคৡձǶ

კ 3.1 ჴᡍೕჄࢬำკ ڼԯᅹᆅᆶႝዀೀ౛࣬ᜢЎ᝘ ԏ໣! ᇙഢόӕ጗ፂቫϐ᝻൞! פрന٫ޑ߻ೀ౛ୖኧᆶڼ ԯᅹᆅԋߏୖኧ! ճҔ༾ቹளډ܌ሡ่ᄬ ஒԋߏӳϐڼԯᅹᆅࡼаႝ ዀೀ౛! SEM၂Т߄य़ ᢀჸ TEMᢀჸ ༾ᢀಔᙃ ၗ਑᏾౛ᆶ่݀ϩ݋ ፕЎኗቪ! AFM߻ೀ౛၂ Т߄य़׎ᇮϩ ่ᄬύԋߏڼԯᅹᆅ! RamanᅹᆅҡᏀ ϯำࡋղᘐ FTIRᅹᆅϯᏢ ᗖ่ϩ݋

კ3.2 ௟ᅲԄႝηᡉ༾᜔

კ 3.4 ᚆη෧ᖓᐒ

߄3.1 ႝዀϯᏢ਻࣬؈ᑈس಍ೕ਱߄ ߄3.2 ௟ᅲԄႝηᡉ༾᜔س಍ೕ਱߄ س಍ೕ਱ ೕ਱ᇥܴ ࠠဦ ႝηᡉ༾᜔(SEM) ᐒࠠ HITACHI S-4000 ႝηᄳ հ഍ཱུ൑ว৔ႝηྍ(CCFE) уೲႝᓸ 0.5ɴ30Kv ှ݋ࡋ 1.5nm ܫε७౗ X20ɴX300000 നε၂ТЁκ Airlock chamberǺ75mm(ޔ৩) x 25mm(ଯࡋ) Sample chamberǺ100mm(ޔ৩) ёᢀჸጄൎ 25mm×25mm ໼௹ ɡ5ɴɠ45° ௽ᙯ 360° ёୀෳૻဦ ΒԛႝηቹႽǴx-ray Mapping ੿ޜࡋ 7 2 10u  Pa(ႝηྍ) س಍ೕ਱ ೕ਱ᇥܴ ࠠဦ ໣่Ԅႝ኶ᇶշϯᏢ਻࣬؇ᑈس಍(PECVD)

ᐒࠠ म୯ STS MULTIPLEX CLUSTER SYSTEM

CHAMBER 1 SILICON NITRIDE CHAMBER 2 SILICON OXIDE

CHAMBER 3 N-TYPE AMORPHOUS SILICON,

P-TYPE AMORPHOUS SILICON ԋ

ߏ ᖓ ጢ

CHAMBER 4 UNDOPED AMORPHOUS SILICON CHAMBER 1, 2Ǻ380 KHz

RF POWER

CHAMBER 3, 4Ǻ13.56 MHz

඲Тελ 6әǴ4 әǴ3 ә

߄ 3.3 ऀ೸Ԅႝηᡉ༾᜔س಍ೕ਱߄ س಍ೕ਱ ೕ਱ᇥܴ ࠠဦ ൑ว৔ऀ೸Ԅႝηᡉ༾᜔ (TEM) ᐒࠠ JEM-2010F ႝηᄳ ൑ว৔ႝηྍ уೲႝᓸ 200kV ᗺϩᒤ౗ 0.19 nm ጕϩᒤ౗ 0.1 nm ܫε७౗ 2000 ७ɴ1500000 ७ നε၂ТЁκ 2mm×2mm ёᢀჸጄൎ 2mm ×1mm ໼௹ -25°ɴ 25° ёୀෳૻဦ ёୀෳૻဦǺܴ-སຎഁऀ೸ႝηቹႽǵᙅ৔კ Ⴝǵᒧ୔ԋႽǵEDS Ӏ᛼ǵNBD ᆶ CBD ੿ޜࡋ 8 10 Pa (ႝηྍ) ߄ 3.4 চηΚᡉ༾᜔ೕ਱߄ س಍ೕ਱ ೕ਱ᇥܴ ࠠဦ চηΚᡉ༾᜔ ᐒࠠ Digital Instruments DI 5000 ௟ඔय़ᑈ 100X100Pm2(max) ၂ТЁκ ёௗڙλܭ 8inch ඲༝ ှ݋ࡋ XY ѳय़ 2nmǴZ ື 0.01nm

߄3.5 ܎ୗӀ᛼ሺس಍΋૓ೕ਱߄ س಍ೕ਱ ೕ਱ᇥܴ ࠠဦ ܎ୗණ৔Ӏ᛼ሺ(Raman Spectrum) ᐒࠠ Renishaw 2000 He-Ne 632.8 nm 17mW ႜ৔ᓎ౗ៜᔈ 200~1100 nm(UVǴVISǴNIR) ႜ৔ᗺελ 1µm ޔ৩ Ӆข៞༾᜔ 50 cmขຯ Ҟ᜔നଯ७౗ 100X(per 3 pixels) ёໆෳጄൎ 30~6000 cm-1 ှ݋ࡋ 1 cm-1(per 3 pixels) Ӏ࢐ 2400/1200 gr/mm నᄊේհࠅϐ CCD 1024 X 256 pixels ߄ 3.6 आѦጕӀ᛼ᓎ᛼Տ࿼

ಃѤക ჴᡍ่݀ᆶ૸ፕ

4.1 όӕ጗ፂቫϐ᝻൞߻ೀ౛ᢀჸ аނ౛਻࣬؇ᑈϩձᗓ΢጗ፂቫᆶ᝻൞ቫϐ၂ТǴӧྕࡋ 550ʚ аణ਻ࢬໆ 100s.c.c.mǵႝዀф౗ 800W(ґ੝)ϐణႝዀ຾Չ߻ೀ౛ 10ϩដࡕ܌ౢғޑ౜ຝǴᢀჸ่݀ӵΠ܌ॊǴ၂Тጓဦӵ߄ 4.1Ƕ 4.1.1 ௟ඔԄႝηᡉ༾᜔(SEM) (1)კ 4.1 ࣁ࿶ణႝዀ߻ೀ౛ࡕ၂Т a ޑ߄य़Ǵᢀჸࣁѳڶޑ߄य़Ǵ࿶ ၸ߻ೀ౛ࡕ٠ؒԖܴᡉׯᡂǴ௢ෳচӢࣁ᝻൞ᗭಈಒλǴа SEM ϐှ݋ࡋคݤкϩᒣձǴஒᙖ AFM ޑϩ݋ٰᇶշᇥܴǶ (2)კ 4.2 ࣁ࿶ణႝዀ߻ೀ౛ࡕ၂Т b ޑ߄य़Ǵҗܭႝዀှᚆణ਻ჹܭ ᙻ᝻൞ᖓጢ཮ԖᇑڅޑਏᔈǴу΢዗ૈޑᜢ߯཮٬ځᏉᆫᗭಈϯǴ ᏾ᡏٰ࣮ᗭಈϩթࡐѳ֡Ǵࡐ፾྽ޑၲډ߻ೀ౛ਏ݀Ƕ (3)კ 4.3 ࣁ࿶ణႝዀ߻ೀ౛ࡕ၂Тޑ c ߄य़ǴКଆ၂Т b ᝻൞৞ރϯ ޑ௃׎׳ࣁమཱǴ᝻൞ᗭಈޑಈ৩ӕਔܴᡉޑቚεǶ (4)კ 4.4 ࣁ࿶ణႝዀ߻ೀ౛ࡕ၂Т d ޑ߄य़Ǵвಒᢀჸёаว౜᝻൞ ৞ރϯޑ௃׎ک၂Т c ࣬྽Ǵՠӧ᝻൞ಈ৩ޑ೽ҽ߾ၨ၂Т c ࣁεǶ (5)კ 4.5 ࣁ࿶ణႝዀ߻ೀ౛ࡕ၂Т e ޑ߄य़ǴԜ၂Т߻ೀ౛ֹԋϐ߄ य़ࠠᄊᆶ၂Т b ၨࣁᜪ՟Ǵࣁၨ٫ϐ߻ೀ౛ਏ݀Ƕ

4.1.2 চηΚᡉ༾᜔(AFM) (1)კ 4.6 ࣁ၂Т a ࿶ణႝዀ߻ೀ౛ࡕϐ߄य़׎ᇮǴ௟ඔޑЁκय़ᑈࣁ 9µm2Ǵёаᢀჸډ၂Т߄य़և౜ᗭಈރǴ᛾ܴ߻ೀ౛ࡕ၂Т a ϐ᝻ ൞ቫᏉ่ԋࣁ৞ރᗭಈǶ (2)კ 4.7 Կკ 4.10 ϩձࣁ၂Т bǵcǵdǵe ࿶ణႝዀ߻ೀ౛ࡕϐ߄य़ ׎ᇮǴ௟ඔޑЁκय़ᑈࣁ 9µm2Ǵӕኬޑёа࣮ډᙻ᝻൞ቫ࿶ၸణ ႝዀ߻ೀ౛ࡕҭև౜৞ރǶ ஒ AFM ϩ݋ϐ၂Т߄य़ಉᕫࡋ᏾౛ӵ߄ 4.2 ᆶკ 4.11Ƕ 4.1.3 ऀ೸Ԅႝηᡉ༾᜔(TEM) კ 4.12 ࣁ၂Т d ࿶ణႝዀ߻ೀ౛ࡕϐ TEM კǴගٮ׳ࣁܴዴޑ ৞ރϯ᛾ᏵǴӕਔёᢀჸډ᝻൞৞ރᗭಈϐಈ৩٠ό֡ϬǶ 4.2όӕ጗ፂቫϐ᝻൞߻ೀ౛૸ፕ ҁჴᡍύ፾྽ϐ߻ೀ౛ୖኧ཮٬ѫਡၸำၨ٫Ǵᡣ᝻൞җচҁѳ ڶރᡂࣁᗭಈރǴЁκၨλǴԜᅿ᝻൞ቫ৞ރϯ౜ຝჹܭௗΠٰԋߏ ڼԯᅹᆅ՞Ԗ࣬྽ख़ाޑӦՏ[51]Ƕҗ SEM ޑϩ݋ёа߃؁࣮рό ӕ጗ፂቫ΢ϐ᝻൞Ǵӧణႝዀޑᇑڅਏ݀ࡕǴ֡Ԗ৞ރϯޑ௃ݩ[52]Ǵ ೭೽ҽёᙖҗ TEM ޑϩ݋ගٮ׳ܴዴޑ᛾ᏵǶќѦҗ SEM ϩ݋ё εౣ࣮р߻ೀ౛ࡕӚ၂Тϐ᝻൞ᗭಈಈ৩Ԗ٤೚ৡ౦Ƕ߄ 4.2 ᆶკ

4.11ࣁ၂Т aǵbǵcǵdǵe ϖᅿ၂Т࿶ AFM ϩ݋ࡕǴ᝻൞ᗭಈϐѳ ֡ಈ৩ǶAFM ϐϩ݋ёа׳మཱޑ࣮ډ᝻൞ቫ৞ރϯޑ௃׎Ǵ᛾ܴ SEMϩ݋ᢀჸΠǴ၂Т a ӕኬԖ߻ೀ౛ਏ݀Ǵҗܭ SEM ᏹբ΢ှ݋ ࡋόᛙۓޑᜢ߯ӢԜคݤ׳మཱᢀჸډᗭಈރ᝻൞ǶќѦҗ AFM ܌ ගٮޑ၂Т߄य़ѳ֡ಈ৩Ǵ२ӃКၨ၂Т aǵbǵc ΟޣǴӕኬۭ׷ࣁ ޖ୷݈Ǵ᝻൞ቫࠆࡋϩձࣁ 1ǵ5ǵ7nmǴӧ࿶ၸ߻ೀ౛ࡕǴ᝻൞ᗭಈ ѳ֡ಈ৩ࣁ 3.1ǵ3.48ǵ3.75nmǴΨ൩ࢂᇥ᝻൞ቫຫࠆ߻ೀ౛ࡕϐ᝻ ൞৞ރϯಈ৩ӕਔΨ཮ၨεǶӆКၨ၂Т cǵdǵe Οޣϐ᝻൞ቫࠆࡋ ֡ࣁ 7nmǴՠ጗ፂቫ߾ϩձࣁޖ୷݈ǵේϯ⑲(TiN)ǵේϯ✗(TaN)Ǵ ځ߻ೀ౛ࡕ᝻൞ᗭಈѳ֡ಈ৩ࣁ 3.75ǵ4.69ǵ2.79nmǴ௢ෳࢂҗܭᙻ ჹܭӚ጗ፂቫϐߕ๱ΚόӕǴ೷ԋӧ׎ԋ৞ރϯᗭಈޑၸำύ᝻൞ᗭ ಈᆶ጗ፂቫ໔߄य़஭Κமࡋό΋ǴӢԜ܌׎ԋϐ᝻൞ᗭಈϐಈ৩ό ӕǴӵკ 4.13 ܌ҢǶ 4.3 όӕ጗ፂቫ΢ԋߏڼԯᅹᆅ ߻ೀ౛ֹԋࡕ၂Та༾ݢႝዀϯᏢ਻࣬(MP-CVD)؇ᑈݤٰԋߏ ᅹᆅǴᇙำྕࡋࣁ 550кǴԋߏਔణ਻ᆶҘ₧ࣁᇙำ਻ᡏǴځࢬໆК ٯࣁ 4Ǻ1Ǵႝዀф౗ࣁ 800WǴҘ₧਻ᡏҗܭႝዀှᚆගٮᅹྍԋߏ ᅹᆅǴᢀჸ่݀ӵΠ܌ॊǴ၂Тጓဦӕኬӵ߄ 4.1Ƕ

4.3.1 ௟ඔԄႝηᡉ༾᜔(SEM) (1)კ 4.14 ᆶკ 4.15 ϩձࣁ၂Т aǵb ԋߏڼԯᅹᆅࡕϐ SEM კǴё ᢀჸډ୷׷΢ԋߏрᆅ৩λЪߏࡋอޑεໆڼԯᅹᆅǶ (2)კ 4.16 ࣁ၂Т c ԋߏڼԯᅹᆅࡕϐ SEM კǴёᢀჸډ୷׷΢ԋߏ ϐڼԯᅹᆅόፕᆅ৩܈ࢂߏࡋܴ֡ᡉޑК၂Т aǵb εǴЪܴᡉ࣮ рᅹᆅԋߏޑྗޔ܄аϷ֡Ϭ܄όىǶ (3)კ 4.17 ࣁ၂Т d ԋߏऐԯᅹᆅࡕϐ SEM კǴёᢀჸډ୷׷΢ԋߏ ϐڼԯᅹᆅև౜៻ԔǴЪԋߏޑஏࡋΨၨ౧᚞ǴќѦё࣮ډܭ୷׷ ΢Ԗ೚ӭޑූ੮ނǶ (4)კ 4.18 ࣁ၂Т e ԋߏऐԯᅹᆅࡕϐ SEM კǴёᢀჸډ୷׷΢ԋߏ ϐڼԯᅹᆅ᏾ᡏᆅ৩ᆶߏࡋၨεǴՠԋߏڼԯᅹᆅϐஏࡋаϷྗޔ ܄ࣁന٫Ƕ 4.4 όӕ጗ፂቫ΢ԋߏڼԯᅹᆅ૸ፕ җ SEM ϐϩ݋Ǵ၂Т aǵbǵc ܌ԋߏϐڼԯᅹᆅߏࡋᆶᆅ৩Ԗ ೴ᅌቚуޑᖿ༈Ǵҗܭ᝻൞ቫࠆࡋᆶڼԯᅹᆅϐԋߏၸำԖߚதஏϪ ޑᜢ߯Ǵ೯த᝻൞ቫၨࠆ߾ԋߏϐڼԯᅹᆅᆅ৩Ψஒ཮ၨε[19]Ǵচ Ӣࣁ߻ॊ܌ගϷǴ߻ೀ౛ӧ᝻൞ቫၨࠆ཮ளډၨεޑ᝻൞ᗭಈǴԶ߻ ೀ౛ࡕϐ᝻൞ᗭಈΞޔௗቹៜڼԯᅹᆅϐԋߏǴӢԜ၂Т aǵbǵc ߻ ೀ౛ࡕϐ᝻൞ᗭಈಈ৩ࣁ၂Т aɦ၂Т bɦ၂Т cǴӧԋߏڼԯᅹᆅࡕ

ᆅ৩ᆶߏࡋӕኬࣁ၂Т aɦ၂Т bɦ၂Т cǴ೭ኬޑ่݀ᆶЎ᝘܌ॊ֍ ӝǶ ၂Т d ᆶ၂Т e ԋߏϐᅹᆅКၨଆٰӧྗޔࡋаϷᅹᆅஏࡋ΢ܴ ᡉԖৡ౦Ǵ೭ኬޑ่݀வٿ၂Т߻ೀ౛ֹԋࡕ၂Т e ӧ᝻൞ᗭಈޑϩ թᆶಈ৩೿К၂Т d ٰޑӳǴߡё௢ෳр่݀ǴќѦё࣮ډ၂Т d ޑ ߄य़ϝԖ٤೚ූ੮ނǴёૈࣁ؇ᑈ҂ֹӄޑߚ඲፦ᅹ(amorphous carbon)аϷ೽ҽ҂ϸᔈޑ᝻൞Ƕ ӆКၨ၂Т a ᆶ၂Т eǴԜٿᅿ၂Тӧ߻ೀ౛ֹԋࡕ᝻൞ᗭಈಈ ৩ϩձࣁ 3.1nm ک 2.79nmǴ࣬ৡόεǴՠӧᅹᆅޑԋߏ่݀ࠅֹӄ όӕǴԜೀ௢ෳࢂҗܭӧऊ 550кᇙำྕࡋΠǴ၂Т a ϐᙻ᝻൞ёૈ ᆶޖۭ׷ϯӝԋᙻޖϯӝނ(nickel silicide)Ǵ೷ԋᙻ᝻൞ޑࢲ܄Π फ़ǴӢԜԋߏϐᅹᆅࠔ፦ό٫Ƕ 4.5 ڼԯᅹᆅႝዀࡕೀ౛౜ຝᢀჸ җܭԵໆډႝዀೀ౛ࡕჹڼԯᅹᆅޑቹៜǴࣁΑБߡᢀჸᡂϯǴ ӢԜᒧ᏷а၂Т e ܌ԋߏϐڼԯᅹᆅࣁ௓ڋಔ၂ТǶճҔႝዀᇶշϯ Ꮲ਻࣬؇ᑈ(PE-CVD)ϐ H2ႝዀǵNH3ႝዀǵO2ႝዀǵCF4ႝዀаϷ CF4/O2షӝႝዀϩձ຾Չೀ౛ 2ǵ5ǵ10 ϩដࡕǴڗр၂Т຾Չϩ݋ ӵΠ܌ॊǴႝዀೀ౛ୖኧӵ߄ 4.3Ƕ

4.5.1 ௟ඔԄႝηᡉ༾᜔(SEM) (1)კ 4.19 ᆶკ 4.20 ϩձࣁڼԯᅹᆅӧ࿶ H2ႝዀೀ౛߻ࡕϐ߄य़ᢀ ჸǴคፕႝዀф౗ࣁ 100W ܈ࢂ 200W ӧ࿶ၸೀ౛ 2ǵ5ǵ10 ϩដ ࡕᅹᆅ߄य़׎ᇮаϷߏࡋ٠คܴᡉׯᡂǶ (2)კ 4.21 ࣁڼԯᅹᆅӧ຾Չ O2ႝዀೀ౛߻ϐ߄य़ᢀჸǴკ 4.22 ᆶკ 4.23ϩձࣁڼԯᅹᆅӧႝዀф౗ 100W ᆶ 200W O2ႝዀೀ౛ࡕϐ ߄य़ᢀჸǶёᢀෳډ 100W O2ႝዀӧೀ౛ 2 ϩដࡕԖ೽ҽޑᅹᆅ೏ ߺอǴ5 ϩដࡕߺอᅹᆅޑय़ᑈܴᡉᡂεЪ᏾ᡏᅹᆅߏࡋΨ෧ϿǴ 10 ϩដࡕ߾ᅹᆅ᏾ᡏ֡೏ઇᚯǶႝዀೀ౛߻ޑᅹᆅߏࡋ 2.6µmǴӧ ࿶ၸ 100W O2ႝዀೀ౛ 2ǵ5ǵ10 ϩដࡕᅹᆅߏࡋϩձࣁ 2.3ǵ1.8ǵ 0.9µmǶԶ 200W O2ႝዀӧೀ౛ 2 ϩដࡕᢀჸ٠ؒԖҺՖਏ݀Ǵ5 ϩដࡕڼԯᅹᆅ߾ࢂֹӄ೏ઇᚯǶ (3)კ 4.19 ࣁڼԯᅹᆅӧ຾Չ NH3ႝዀೀ౛߻ϐ߄य़ᢀჸǴკ 4.24 ᆶ კ 4.25 ϩձࣁڼԯᅹᆅӧႝዀф౗ 100W ᆶ 200W NH3ႝዀೀ౛ࡕ ϐ߄य़ᢀჸǶёᢀෳډ 100W NH3ႝዀӧೀ౛ 2 ϩដࡕߏࡋҗচҁ 6µm ෧ࣁ 5.8µmǴ5 ϩដࡕߏࡋࣁ 5.4µmǴ10 ϩដࡕߏࡋε൯෧ อ໻ഭ 1.8µmǶԶ 200W NH3ႝዀӧೀ౛ 2 ϩដࡕᅹᆅߏࡋ 5.7µmǴ 5 ϩដࡕ෧ࣁ 2.7µmǴЪᢀჸଆٰᅹᆅ᏾ᡏ่ᄬܴᡉԖઇᚯǴ10 ϩ ដࡕᅹᆅ߾ֹӄ೏ઇᚯǶ

(4)კ 4.26 ᆶკ 4.27 ϩձࣁڼԯᅹᆅӧ࿶ CF4ႝዀೀ౛߻ࡕϐ߄य़ᢀ ჸǴӧ࿶ၸೀ౛ 2ǵ5ǵ10 ϩដࡕᅹᆅ߄य़׎ᇮаϷߏࡋ٠คܴᡉ ׯᡂǴёᢀჸډᅹᆅ߄य़೽ҽᚇ፦ᗭಈӧ࿶ၸ CF4ႝዀೀ౛ࡕ੃ ѨǴᅹᆅ߄य़᏾ᡏ΢ᡂޑၨࣁዅృǶ (5)კ 4.26 ᆶკ 4.28 ϩձࣁڼԯᅹᆅӧ຾Չ CF4/O2షӝႝዀೀ౛߻ࡕ ϐ߄य़ᢀჸǴёᢀჸډӧೀ౛ 2 ϩដࡕߏࡋҗচҁ 5µm ෧ 4.1µmǴ 5 ϩដࡕߏࡋࣁ 1.2µmǴ10 ϩដࡕߏࡋࣁ 0.8µmǶᝩុೀ౛ 5~10 ϩដࡕᅹᆅޑ่ᄬ൳Яֹӄ೏ઇᚯǴک΋૓ SEM ᢀჸډϐᅹᆅ߄ य़ࠠᄊԖࡐεޑৡ౦Ƕ ஒڼԯᅹᆅ࿶ H2ǵO2ǵNH3ǵCF4ǵCF4/O2ႝዀೀ౛ࡕߏࡋޑᡂ ϯаϷᖿ༈Ǵϩձёҗ߄ 4.4 Կ 4.7 ᆶკ 4.29 Կ 4.32 ଺КၨǴ 4.5.2 ܎ୗӀ᛼ሺ(Raman Spectrum) (1)კ 4.33 ࣁڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕϐ܎ୗӀ᛼კǴ100W ᆶ 200W ϐႝዀф౗ೀ౛ࡕǴD-band ک G-band ݢঢ়ϝܴᡉӸӧǴ߄Ңᅹᆅ ่ᄬ٠คܴᡉઇᚯǶӧ 100W H2ႝዀೀ౛ 2ǵ5ǵ10 ϩដࡕҡᏀϯ ࠔ፦ࡰ኱(I_D/I_G)җচҁ 1.078 ᡂࣁ 1.119ǵ1.049ǵ1.053Ǵӵ߄ 4.8Ǵ ᡉҢᅹᆅࠔ፦ԖගܹǶ200W H2ႝዀೀ౛ 2ǵ5ǵ10 ϩដࡕᅹᆅࠔ ፦ࡰ኱җচҁ 1.078 ᡂࣁ 1.061ǵ1.053ǵ1.084Ǵӵ߄ 4.9ǴᡉҢଯ ф౗ H ႝዀೀ౛Ǵӧอਔ໔཮Ԗዅృਏ݀Ǵՠߏਔ໔߾཮೷ԋᅹ

ᆅࠔ፦Πफ़Ƕკ 4.37 ࣁᅹᆅ࿶ H2ႝዀೀ౛ࡕࠔ፦ᖿ༈კǶ (2)კ 4.34 ࣁڼԯᅹᆅ࿶ O2ႝዀೀ౛ࡕϐ܎ୗӀ᛼კǴӧ 100W ϐႝ ዀф౗ೀ౛ 10 ϩដࡕǴD-band ᆶ G-band ݢঢ়ࣣόܴᡉǴ߄Ңᅹ ᆅ่ᄬёૈઇᚯǶ200W ϐႝዀф౗ೀ౛߾ӧ 5 ϩដࡕǴᅹᆅҭё ૈઇᚯǶӧ 100W O2ႝዀೀ౛ 2ǵ5 ϩដࡕᅹᆅࠔ፦ࡰ኱җচҁ 1.078 ᡂࣁ 1.058ǵ1.009Ǵӵ߄ 4.10ǴᡉҢᅹᆅࠔ፦ԖගܹǶ200W O2ႝ ዀೀ౛ 2 ϩដࡕᅹᆅࠔ፦ࡰ኱җচҁ 1.078 ᡂࣁ 1.062Ǵӵ߄ 4.11Ǵ ᆶ H2ႝዀೀ౛Ԗᜪ՟่݀Ƕკ 4.38 ࣁᅹᆅ࿶ O2ႝዀೀ౛ࡕࠔ፦ᖿ ༈კǶ (3)კ 4.35 ࣁڼԯᅹᆅ࿶ NH3ႝዀೀ౛ࡕϐ܎ୗӀ᛼კǴ100 ᆶ 200W ϐႝዀф౗ೀ౛ 10 ϩដࡕǴD-band ᆶ G-band ݢঢ়ࣣόܴᡉǴ߄ Ңᅹᆅ่ᄬёૈઇᚯǶӧ 100W NH3ႝዀೀ౛ 2ǵ5 ϩដࡕᅹᆅࠔ ፦ࡰ኱җচҁ 1.078 ᡂࣁ 1.02ǵ1.011Ǵӵ߄ 4.12ǴᡉҢᅹᆅࠔ፦Ԗ ගܹǶ200W NH3ႝዀೀ౛ 2ǵ5 ϩដࡕᅹᆅࠔ፦ࡰ኱җচҁ 1.078 ᡂࣁ 1.006ǵ1.1Ǵӵ߄ 4.13ǴᡉҢᅹᆅࠔ፦ᡂৡǶკ 4.39 ࣁᅹᆅ࿶ NH3ႝዀೀ౛ࡕࠔ፦ᖿ༈კǶ (4)კ 4.36 ࣁڼԯᅹᆅ࿶ CF4ᆶ CF4/O2ႝዀೀ౛ࡕϐ܎ୗӀ᛼კǴӧ CF4ႝዀф౗ೀ౛ࡕǴD-band ک G-band ݢঢ়ϝܴᡉӸӧǴ߄Ңᅹ ᆅ่ᄬ٠คܴᡉઇᚯǶCF4/O2ႝዀೀ౛߾ӧ 5 ϩដࡕǴᅹᆅֹӄઇ

ᚯǶCF4ႝዀೀ౛ 2ǵ5ǵ10 ϩដࡕᅹᆅࠔ፦ࡰ኱җচҁ 1.209 ᡂࣁ 1.071ǵ1.06ǵ1.063Ǵӵ߄ 4.14ǴᡉҢᅹᆅࠔ፦ԖගܹǶCF4/O2ႝ ዀೀ౛ 2 ϩដࡕᅹᆅࠔ፦ࡰ኱җচҁ 1.209 ᡂࣁ 1.11Ǵӵ߄ 4.15Ǵ ᆶ O2ႝዀೀ౛Ԗᜪ՟่݀Ƕკ 4.40 ࣁᅹᆅ࿶ O2ႝዀೀ౛ࡕࠔ፦ᖿ ༈კǶ 4.5.3 ഡճယᙯඤआѦጕϩ݋ሺ(FTIR) (1)კ 4.41 ࣁᅹᆅ࿶ H2ႝዀೀ౛ࡕϐ FTIR ϩ݋კǴܭ C-H ᗖ่ϐݢ ኧጄൎ 2800~3100cm-1֡ؒԖр౜ҺՖݢঢ়Ǵႝዀှᚆϐ H2٠ؒԖ ჹᅹᆅ่ᄬԖܴᡉϸᔈǶ (2)კ 4.42 ࣁᅹᆅ࿶ O2ႝዀೀ౛ࡕϐ FTIR ϩ݋კǴ100ǵ200 Watt ϐ O2ႝዀܭݢኧ 1086 cm -1 ک 1083 cm-1р౜ C-O ᗖ่(1050~1300cm-1) ϐݢঢ়Ǵё௢ෳᅹᆅᆶႝዀှᚆϐ O2ౢғ C-O ۔ૈ୷Ƕ (3)კ 4.43 ࣁᅹᆅ࿶ NH3ႝዀೀ౛ࡕϐ FTIR ϩ݋კǴ100Wǵ200W ϐ NH3ႝዀϩձܭݢኧ 1083 cm-1ک 1081 cm-1р౜ C-N ᗖ่ (1020~1340cm-1)ϐݢঢ়ǴќѦܭݢኧ 1475 cm-1ک 1474 cm-1р౜ C-H ᗖ่(1340~1470cm-1)ϐݢঢ়Ǵё௢ෳᅹᆅᆶႝዀှᚆϐ NH3 ౢғ C-H ۔ૈ୷Ƕ (4)კ 4.44 ࣁᅹᆅ࿶ CF4ႝዀೀ౛ࡕϐ FTIR ϩ݋კǴܭ 1221 cm -1 р ౜ C-F ᗖ่(1100~1350cm-1)ϐݢঢ়Ǵё௢ෳᅹᆅᆶႝዀှᚆϐ CF

ౢғ C-F ۔ૈ୷Ƕ (5)კ 4.45 ࣁᅹᆅ࿶ CF4/O2ႝዀೀ౛ࡕϐ FTIR ϩ݋კǴܭ 1089cm -1 р౜ C-O ᗖ่ϐݢঢ়Ǵӧ 1233 cm-1р౜ C-F ᗖ่ϐݢঢ়Ǵё௢ෳ ᅹᆅᆶႝዀှᚆϐ CF4ᆶ O2ౢғ۔ૈ୷Ƕ 4.6 ႝዀೀ౛౜ຝ૸ፕ ᅹᆅӧ࿶ၸႝዀࡕೀ౛ࡕځ่ᄬઇᚯޑำࡋǴа CF4/O2ႝዀࣁ നமௗ๱ϩձࣁ O2ǵNH3ǵH2Ǵനࡕࣁ CF4ႝዀǶҗ SEM ޑᢀჸǴ ӧ෧อᅹᆅߏࡋа፾྽ޑ O2ᆶ NH3ႝዀೀ౛ࣁന٫ǴCF4/O2ႝዀᇑ څ܄ϼၸமਗ਼ǴࣗԿೱޖ୷݈೿Ԗ೏៎ᔐǴԶ H2ᆶ CF4ႝዀ߾ჹܭ ᅹᆅޑߏࡋό཮೷ԋҺՖቹៜǶ΋૓ٰᇥϡન਼ϯΚελࣁ FɧOɧ NǴӢԜᅹᆅߏࡋޑᡂϯ࿶ၸ O2 ႝዀೀ౛К NH3ႝዀೀ౛ٰޑεǴ ԶКၨӕኬޑ CF4ႝዀᅹᆅߏࡋؒԖᡂϯǴ௢ෳࢂҗܭ C-F ϐᗖૈऊ

ࣁ 497 kJ/moleǴO-O ᗖࣁ 142 kJ/moleǴN-H ᗖࣁ 351 kJ/moleǴКၨ

ଆٰӧӕኬႝዀф౗Π CF4ှᚆޑኧໆ཮ၨϿǴӢԜکᅹᆅޑϸᔈΨ ཮ၨࣁόܴᡉǶՠӧ CF4/O2ႝዀҗܭԖ O2਻ᡏ཮٬ள CF4ޑှᚆ౗ ගϲ[53]Ǵӧкᅈ O ک F ޑᕉნΠځᇑڅޑՉࣁᡂޑࡐமਗ਼Ǵ೚ӭъ Ꮴᡏᇙำޑ୷Ѡύ֡٬Ҕ೭ኬޑషӝႝዀբࣁమ౛ϸᔈ๚ޑБݤǶ ႝዀೀ౛ࡕᅹᆅ่ᄬޑઇᚯ௃׎کߏࡋᡂϯ࣬ӕࣁ CF4/O2നம ௗ๱ϩձࣁ O2ǵNH3ǵH2ᆶ CF4ႝዀǶޔளݙཀޑࢂǴόᆅࢂবᅿ

਻ᡏϐႝዀӧೀ౛ 2 ϩដࡕᅹᆅࠔ፦֡ԖගϲǴ௢ෳҗܭԋߏᅹᆅࡕ ᅹᆅ߄य़೯த཮֎ߕߚ඲፦ᅹаϷϿ೚ځдᚇ፦ǴӢԜϿ೚ޑႝዀೀ ౛ࢂёаஒ೭٤ԦࢉѐନǴ٬ᅹᆅ߄य़׳уዅృǴӧѐନᅹᆅ߄य़ᚇ ፦ࡕှᚆޑႝዀω໒ۈᇑڅᅹᆅǶӆᙖҗ FTIR ϐϩ݋ගٮᅹᆅ߄य़ ϐᗖ่ǴᅹᆅߏࡋԖᡂϯޑ၂Т΢֡ёа௖ෳډᆶႝዀϸᔈޑ᛾ᏵǶ 4.7 ่ᄬύԋߏڼԯᅹᆅ ճҔނ౛਻࣬؇ᑈݤǴ؇ᑈ጗ፂቫේϯ✗ 100nm ᆶ᝻൞ᙻ 10nm ࡕǴ٬ҔϯᏢ਻࣬؇ᑈݤԋߏϟႝቫΒ਼ϯޖ(SiO2)500nmǴ࿶༾ቹǵ ᇑڅᇙำளϾ৩ 500nm (Hole)Ǵ᏾ᡏ่ᄬӵკ 4.46Ǵ߄ 4.16 ࣁԋߏᅹ ᆅୖኧ߄Ƕ ୖኧ a ᆶୖኧ b ᅹᆅԋߏ٠ό౛གྷǴёᢀჸډᅹᆅޔ৩λЪԋߏ ஏࡋό୼Ǵୖኧ b ගଯΑᇙԋਔᅹྍ(Ҙ₧)ޑࢬໆǴӢԜᅹᆅஏࡋК ୖኧ b ౣଯǴӵკ 4.47 کკ 4.48Ƕୖኧ cǵdǵe ߾ӧᓸΚၨଯаϷᇙ ำ਻ᡏࢬໆၨεޑୖኧΠԋߏᅹᆅǴځԋߏϐᅹᆅКၨଆୖኧ aǵb ֡ၨࣁ౛གྷǴՠྗޔ܄όىǴԋߏஏࡋΨό୼ଯǴӵკ 4.49Ƕ კ 4.50 ߾ࣁୖኧ e ӧεय़ᑈΠԋߏϐڼԯᅹᆅǴӕኬୖኧԋߏ ϐᅹᆅ߄य़׎ᇮ࣬ৡ೚ӭǶ௢ෳᅹྍ਻ᡏϐᘉණำࡋᆶᅹᆅԋߏԖஏ όёϩޑᜢ߯ǴԶҁԛჴᡍ၂Тࣁಒ༾Ͼ่ᄬǴӢԜӧୖኧ΢ޑፓ᏾ аቚуᅹྍࣁЬǴӵႣයёளډӳޑԋߏਏ݀ǴՠӧྗޔࡋаϷԋߏ

ஏࡋޑ೽ϩϝԖว৖ޑޜ໔ǶќѦҗ܎ୗӀ᛼ޑϩ݋Ǵᗨฅᢀჸډୖ ኧ e ԋߏϐᅹᆅ߄य़׎ᇮ࣬ৡεǴՠࠔ፦(I_D/I_G)٠คࡐεৡ౦ӵკ 4.51ǵ߄ 4.17Ǵ௢ෳಒ༾Ͼ่ᄬ٠όԋࣁࠔ፦ޑቹៜЬӢǶ 4.8 ่ᄬύڼԯᅹᆅᆶႝዀࡕೀ౛ ӧ᏾Тԋߏϐڼԯᅹᆅ࿶ႝዀࡕೀ౛ዴჴёаၲډ෧อߏࡋǴ߻ ॊჴᡍ่݀ගٮа NH3аϷ O2ϐႝዀೀ౛ࣁၨ౛གྷǶӢԜǴӧᅹᆅ ܭ่ᄬύԋߏࡕа 200W ϐ NH3ǵO2ႝዀ຾Չࡕೀ౛Ƕკ 4.52 ࣁ҂ ࿶ႝዀೀ౛߻่ᄬύᅹᆅϐ SEM კǴკ 4.53 کკ 4.54 ϩձࣁᅹᆅ࿶ NH3ᆶ O2ႝዀೀ౛ࡕ߄य़׎ᇮǴёаᢀჸډᅹᆅޑዴ෧อǴЪߏࡋ ᆶϾుৡόӭǴ߄य़ϐಉᕫࡋε൯ޑ෧եǶ

კ 4.1 ၂Т a ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.2 ၂Т b ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.4 ၂Т d ࿶ణႝዀ߻ೀ౛ࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.6 ၂Т a ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ

კ 4.8 ၂Т c ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ

კ 4.10 ၂Т e ࿶ణႝዀ߻ೀ౛ࡕϐচηΚᡉ༾᜔კ 0 1 2 3 4 5 Ni 7nm Ni 7nm/TaN Ni 7nm/TiN Ni 5nm d e c b Surface R o ughness(nm) Sample NO. a Ni 1nm კ 4.11 Ӛ၂Тϐ᝻൞ѳ֡ಈ৩კ

კ 4.12 ၂Т d ߄य़࿶ణႝዀೀ౛ࡕϐ TEM კ

კ 4.14 ၂Т a ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.15 ၂Т b ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.17 ၂Т d ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ

კ 4.19 H2ᆶ NH3ႝዀೀ౛߻ڼԯᅹᆅ߄य़׎ᇮ

კ 4.20 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕ߄य़׎ᇮ

(a)2min

(b)5min

(c)10min

კ 4.22 ڼԯᅹᆅӧόӕਔ໔ܭ 100W ϐ O2ႝዀೀ౛ࡕ߄य़׎ᇮ

(a)2min

(b)5min

კ 4.23 ڼԯᅹᆅӧόӕਔ໔ܭ 200W ϐ O2ႝዀೀ౛ࡕ߄य़׎ᇮ

(a)2min

(b)5min

(c)10min

კ 4.24 ڼԯᅹᆅӧόӕਔ໔ܭ 100W ϐ NH3ႝዀೀ౛ࡕ߄य़׎ᇮ

(a)2min

(b)5min

(c)10min

კ 4.25 ڼԯᅹᆅӧόӕਔ໔ܭ 200W ϐ NH3ႝዀೀ౛ࡕ߄य़׎ᇮ

კ 4.26 CF4ᆶ CF4/O2ႝዀೀ౛߻ڼԯᅹᆅ߄य़׎ᇮ

(a)2min

(b)5min

(c)10min

კ 4.28 ڼԯᅹᆅӧόӕਔ໔ܭ 300W ϐ CF4/ O2ႝዀೀ౛ࡕ߄य़׎ᇮ

0 2 4 6 8 10 4 5 6 7 8 Leng th ( u m )

Treat Time (min)

100W H 2 Plasma 200W H 2 Plasma კ 4.29 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕߏࡋᡂϯ 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 Length (um )

Treat Time (min)

100W O

2 Plasma

200W O₂ Plasma

0 2 4 6 8 10 0 1 2 3 4 5 6 Length (um )

Treat Time (min)

100W NH 3 Plasma 200W NH₃ Plasma კ 4.31 ڼԯᅹᆅ࿶ NH3ႝዀೀ౛ࡕߏࡋᡂϯ 0 2 4 6 8 10 0 1 2 3 4 5 6 Len gth (u m )

Treat Time (min)

300W CF₄ Plasma

300W CF

4/O2 Plasma

1200 1400 1600 1800 (d)10min (c)5min (b)2min In tensi ty (A. U .) Raman Shift ʻcm-1ʼ (a)as-CNT (a) 100W 1200 1400 1600 1800 (d)10min (c)5min (b)2min In te ns it y ( A .U .) Raman Shift ʻcm-1ʼ (a)as-CNT (b)200W კ 4.33 ڼԯᅹᆅ࿶όӕф౗ϐ H2ႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)100W (b)200W

1200 1400 1600 1800 (d)10min (c)5min (b)2min In te n sity (A. U.) Raman Shift ʻcm-1ʼ (a)as-CNT (a)100W 1200 1400 1600 1800 (d)10min (c)5min (b)2min Inte ns ity (A.U .) Raman Shift ʻcm-1ʼ (a)as-CNT (b)200W კ 4.34 ڼԯᅹᆅ࿶όӕф౗ϐ O2ႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)100W (b)200W

1200 1400 1600 1800 (d)10min (c)5min (b)2min In te n s it y ( A .U .) Raman Shift ʻcm-1ʼ (a)as-CNT (a)100W 1200 1400 1600 1800 (c)5min (d)10min (b)2min In tensi ty (A. U .) Raman Shift ʻcm-1ʼ (a)as-CNT (b)200W კ 4.35 ڼԯᅹᆅ࿶όӕф౗ϐ NH3ႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)100W (b)200W

1400 1600 1800 (d)10min (c)5min (b)2min In te n s it y ( A .U .) Raman Shift ʻcm-1ʼ (a)as-CNT (a) CF4ႝዀ 1400 1600 1800 (d)10min (b)2min (c)5min Int ens ity ( A .U .) Raman Shift (cm-1₎ (a)as-CNT (b) CF4+O2షӝႝዀ კ 4.36 ڼԯᅹᆅ࿶ 300W ϐόӕႝዀೀ౛ࡕϐ܎ୗӀ᛼ (a)CF4ႝዀ (b) CF4+O2షӝႝዀ

0 2 4 6 8 10 1.04 1.06 1.08 1.10 I D /I G

Treat Time (min)

100W H 2 Plasma 200W H₂ Plasma კ 4.37 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕϐҡᏀϯࠔ፦კ 0 2 4 6 1.00 1.02 1.04 1.06 1.08 ID /IG

Treat Time (min)

100W O₂ Plasma 200W O₂ Plasma

0 2 4 6 0.95 1.00 1.05 1.10 1.15 I D /I G

Treat Time (min)

100W NH₃ Plasma 200W NH₃ Plasma

კ 4.39 ڼԯᅹᆅ࿶ NH3ႝዀೀ౛ࡕϐҡᏀϯࠔ፦კ

2800 2900 3000 3100 3200 (d)10min (c)5min (b)2min Intensity (A .U.) Wave Number ʻcm-1ʼ (a)as-CNT კ 4.41 ڼԯᅹᆅ࿶ H2ႝዀೀ౛ࡕϐ FTIR ϩ݋კ 800 1000 1200 1400 1600 0.0 0.5 1.0 (d)10min (c)5min (b)2min Int en sit y ( A .U .) Wave Number ʻcm-1ʼ 1086cm-1 C-O (a)as-CNT (a)100W 800 1000 1200 1400 1600 0.5 1.0 (d)10min (c)5min (b)2min Inte ns ity ( A .U .) Wave Number ʻcm-1ʼ 1083cm-1 C-O (a)as-CNT (b)200W კ 4.42 ڼԯᅹᆅ࿶όӕф౗ O2ႝዀೀ౛ࡕϐ FTIR ϩ݋კ (a)100W (b)200W

800 1000 1200 1400 1600 1800 (d)10min (c)5min (b)2min 1475cm-1 C-H Intensity (A.U.) Wave Number ʻcm-1ʼ 1083cm-1 C-N (a)as-CNT (a)100W 800 1000 1200 1400 1600 1800 (d)10min (c)5min (b)2min C-H Intensity (A.U.) Wave Number ʻcm-1ʼ 1081cm-1 C-N 1474cm-1 (a)as-CNT (b)200W კ 4.43 ڼԯᅹᆅ࿶όӕф౗ NH3ႝዀೀ౛ࡕϐ FTIR ϩ݋კ (a)100W (b)200W

800 1000 1200 1400 1600 1800 (d)10min (c)5min (b)2min C-F In te ns it y ( A .U .) Wave Number ʻcm-1ʼ 1221.cm-1 (a)as-CNT კ 4.44 ڼԯᅹᆅ࿶ CF4ႝዀೀ౛ࡕϐ FTIR ϩ݋კ 800 1000 1200 1400 1600 1800 (d)10min (c)5min (b)2min C-F Int e n s it y (A .U .) Wave Number ʻcm-1ʼ C-O 1089cm-1 1233cm-1 (a)as-CNT კ 4.45 ڼԯᅹᆅ࿶ CF4/O2ႝዀೀ౛ࡕϐ FTIR ϩ݋კ

კ 4.46 Ͼࢰ่ᄬҢཀკ

კ 4.47 ୖኧ a ԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ

(a)ୖኧ c

(b)ୖኧ d

(c)ୖኧ e

კ 4.49 όӕୖኧԋߏڼԯᅹᆅࡕϐ௟ඔԄႝηᡉ༾᜔კ (a)ୖኧ c (b)ୖኧ d (c)ୖኧ e

კ 4.50 ୖኧ e εय़ᑈԋߏϐڼԯᅹᆅ߄य़׎ᇮ 1200 1400 1600 1800 (b)Hole Inte ns ity (A.U .) Raman Shift ʻcm-1ʼ (a)Blanket კ 4.51 ୖኧ e εय़ᑈᆶ่ᄬԋߏڼԯᅹᆅϐ܎ୗϩ݋კ

კ 4.52 ܭ่ᄬύԋߏϐڼԯᅹᆅ

(a)5min

(b)10min

კ 4.53 ่ᄬύԋߏϐڼԯᅹᆅ࿶όӕਔ໔ NH3ႝዀೀ౛ࡕϐ SEM კ

(a)5min

(b)10min

კ 4.54 ่ᄬύԋߏϐڼԯᅹᆅ࿶όӕਔ໔ O2ႝዀೀ౛ࡕϐ SEM კ

߄ 4.1 ߻ೀ౛ᆶڼԯᅹᆅԋߏ၂Тጓဦ߄

၂Тጓဦ ጗ፂቫࠆࡋ ᝻൞ࠆࡋ ᏾ᡏ่ᄬ

a Si sub. Ni 10Å Ni(10Å)/Si sub.

b Si sub. Ni 50Å Ni(50Å)/Si sub.

c Si sub. Ni 70Å Ni(70Å)/Si sub.

d TiN 200Å Ni 70Å Ni(70Å)/TiN(200Å)/Si sub.

e TaN 200Å Ni 70Å Ni(70Å)/TaN(200Å)/Si sub.

߄ 4.2 ߻ೀ౛ࡕ၂Т߄य़ѳ֡ಈ৩߄ ၂Тጓဦ ᏾ᡏ่ᄬ ߻ೀ౛ࡕ၂Тѳ֡ಈ৩(nm) a Ni(10Å)/Si sub. 3.10 b Ni(50Å)/Si sub. 3.48 c Ni(70Å)/Si sub. 3.75 d Ni(70Å)/TiN(200Å)/Si sub. 4.69 e Ni(70Å)/TaN(200Å)/Si sub. 2.79 ߄ 4.3 ႝዀࡕೀ౛ୖኧ߄ ႝዀ਻ᡏ ႝዀф౗(W) ୷݈ྕࡋ( )к ႝዀೀ౛ਔ໔(min) H2 100/200 300 2/5/10 NH3 100/200 300 2/5/10 O2 100/200 300 2/5/10 CF4 300 300 2/5/10 CF4+O2 300 300 2/5/10

߄ 4.4 H2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ ႝዀф౗(W) ೀ౛ਔ໔(min) ߏࡋ(µm) As-CNT 0 6 100 2 5.8 100 5 6 100 10 5.9 200 2 5.9 200 5 5.8 200 10 5.9 ߄ 4.5 O2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ ႝዀф౗(W) ೀ౛ਔ໔(min) ߏࡋ(µm) As-CNT 0 2.6 100 2 2.3 100 5 1.8 100 10 0.9 200 2 2.6 200 5 0 200 10 0 ߄ 4.6 NH3ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ ႝዀф౗(W) ೀ౛ਔ໔(min) ߏࡋ(µm) As-CNT 0 6 100 2 5.8 100 5 5.4 100 10 1.8 200 2 5.7 200 5 2.7 200 10 0

߄ 4.7 CF4ᆶ CF4/O2ႝዀೀ౛ࡕᅹᆅߏࡋᡂϯ᏾౛߄ ႝዀ਻ᡏ ႝዀф౗(W) ೀ౛ਔ໔(min) ߏࡋ(µm) — As-CNT 0 5 CF4 300 2 5 CF4 300 5 5 CF4 300 10 5 CF4/O2 300 2 4.1 CF4/O2 300 5 1.2 CF4/O2 300 10 0.8 ߄ 4.8 100W H2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ ਔ໔(min) D-band(cm-1 ) G-band(cm-1) ID IG ID/IG 0 1348 1591 199.8 185.3 1.078 2 1340.3 1598.8 196.3 183.5 1.069 5 1351.2 1591.7 184.8 176.1 1.049 10 1347.2 1599.6 183 173.8 1.053 ߄ 4.9 200W H2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ ਔ໔(min) D-band(cm-1 ) G-band(cm-1) ID IG ID/IG 0 1348 1591 199.8 185.3 1.078 2 1350.5 1587 179.8 169.5 1.061 5 1353.6 1579.2 181.9 172.8 1.053 10 1342.4 1588.6 183.2 169 1.084 ߄ 4.10 100W O2ႝዀೀ౛ࡕ܎ୗӀ᛼Տ࿼ᆶமࡋКॶ ਔ໔(min) D-band(cm-1 ) G-band(cm-1) ID IG ID/IG 0 1348 1591 199.8 185.3 1.078 2 1357.3 1590.3 229.9 217.3 1.058 5 1359 1585.6 200 198.2 1.009 10 1320.5 — 207.9 — —