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超薄氮化閘極氧化層奈米CMOS元件可靠性的新方法研究

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Fig. 2 Incremental charge pumping (CP) methodology- methodology-Using with-leakage CP curves, I CP,f1 and I CP,f2 , to obtain a correct CP curve, I CP,∆f = f1 - f2 .

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