[PDF] Top 20 GaN-based photonic crystal surface emitting lasers with central defects
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GaN-based photonic crystal surface emitting lasers with central defects
... The GaN-based photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and ...the central defect size ... See full document
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Characteristics of GaN-based photonic crystal surface emitting lasers
... a surface emitting laser. 1,2 This kind of PC surface emitting lasers 共PCSELs兲 could be considered as a candidate for perfect single mode emission over a large area, high out- put ... See full document
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Threshold gain analysis in GaN-based photonic crystal surface emitting lasers
... atoms with optical gains ...of GaN- based PCSELs at the Γ band edge with triangular-lattice patterns using the MSM and compare simulation results with experimental ... See full document
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GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector
... area with PC ...PC lasers with different lattice constants were plotted, as shown in ...PC lasers have lasing peaks in a range from 401 to 425 ...increased with the lattice constant in ... See full document
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The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers
... ABSTRACT GaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were fabricated and ...of ... See full document
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Study of GaN-Based Photonic Crystal Surface-Emitting Lasers (PCSELs) With AlN/GaN Distributed Bragg Reflectors
... PC lasers with different lattice constants occurs at the calculated band edges, showing dif- ferent polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ-, K -, ... See full document
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GaSb-based mid infrared photonic crystal surface emitting lasers
... GaSb-based surface emitting photonic crystal lasers with a wavelength around ...the photonic crystal had a square lattice with circular air-holes ... See full document
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Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
... vices with different lattice constants can be grouped into three values of ...devices with three different PC lattice constants of 190, 210, and 230 nm, ...our GaN-based PCSELs, we measured ... See full document
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Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics
... Moreover, it can be achieved to manipulate both the beam profiles and their polarization by using a suitable structure of the PC unit cell and lattice phase [2,8]. On the other hand, GaAs-based semicon- ductor ... See full document
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Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method
... dealt with and the analysis of arbitrary defect or lattice patterns requires further ...infinite photonic crystal patterns instead of the real device such that the boundary conditions of the PCSELs ... See full document
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Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers
... that with the increasing of thickness of the inner cladding layer, values of threshold gain are presented with an increasing ...layer. Based on the coupled wave method, the lowest threshold gain is ... See full document
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GaN-based high contrast grating surface-emitting lasers
... in GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical ... See full document
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Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm
... Vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention in recent ...feedback lasers because of their easy array scaling and packaging, low power consumption, and low ... See full document
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Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface
... Shown in Fig. 2(b) is a cross-sectional SEM micrograph of PQC patterns on the n-GaN surface. Notice that the depth of air hole is about 300 nm. Current–voltage ( – ) and intensity–current ( – ) ... See full document
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Investigation of GaN-based light-emitting diodes using double photonic crystal patterns
... LEDs with photonic crystal (PhC) patterns on an n- and a p-GaN layer by nano-imprint lithog- raphy (NIL) are fabricated and ...the GaN-based LED with PhC patterns on an n- ... See full document
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Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers
... (PL) with excitation source of 1064-nm pulsed fiber laser (50 ns pulse width @ 5 KHz repetition ...0.1. Based on our previous work, the etched PC depth of QD PCSELs is more than two times that of typical QW ... See full document
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Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
... associated with various material systems including InGaAlAs, InGaAsP, AlGaAs, InGaAlP, and ...vertical-cavity surface-emitting lasers, photonic crystal lasers, ... See full document
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High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
... of photonic crystal with a single-point defect in the center were defined within the p-contact ring us- ing photolithography, and were etched through the p-type DBR using ...the photonic ... See full document
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Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
... DBRs with insertion of 5.5 periods of AlN/GaN superlattice (SL) ...represent GaN layers. The interfaces between AlN and GaN layers shows sharply and abruptly in low-magnification TEM image, as ... See full document
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Electrically driven integrated photonic crystal nanocavity coupled surface emitting laser
... of photonic crystal 共PhC兲 has opened up a new way for manipulation and control of light in both pas- sive and active photonic ...Coupled with the modern nanofabrication techniques, the ... See full document
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