[PDF] Top 20 Bias-Dependent Charge Accumulation in Pentacene-based Thin-Film Transistors
Has 10000 "Bias-Dependent Charge Accumulation in Pentacene-based Thin-Film Transistors" found on our website. Below are the top 20 most common "Bias-Dependent Charge Accumulation in Pentacene-based Thin-Film Transistors".
Bias-Dependent Charge Accumulation in Pentacene-based Thin-Film Transistors
... ABSTRACT In this paper, we have demonstrated the current increase with repeated measurements of I d -V ds curves with different V g values which results from the non-uniform carrier accumulation in ... See full document
6
Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
... of bias stress at high tem- perature have been ...gate bias temperature instability experiment has been used to prove the thermally induced holes ...generation. In addition, the transfer ... See full document
6
Pentacene-Based Organic Thin Film Transistors for Ammonia Sensing
... to charge trapping in insulator or defect state creation in pentacene film [37], ...the bias-stress effect in our experiment because both STD- and UV-OTFTs keep almost ... See full document
8
Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates
... ganic thin-film transistor 共OTFT兲 applications for all organic devices because they can often be formed by simply spin coating or printing at room temperature under ambient ...insulators in OTFTs ... See full document
5
Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors
... 兲 in the saturation region, and low interface trap density 共N ...increase in leakage-current density indicates the existence of an additional route for charge to transfer after the exposure of AlN to ... See full document
6
Effect of surface free energy in gate dielectric in pentacene thin-film transistors
... semiconductor-based thin-film transistors 共TFTs兲 due to dra- matic performance improvements observed in this techno- logical ...domain. Pentacene-based TFTs represent ... See full document
3
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
... carriers. In this work, devices were first exposed to air and then placed in a ...when in a ...gate bias stress when a device was in air ...pumped in a vacuum chamber for many ... See full document
5
Pentacene-based thin film transistors used to drive a twist-nematic liquid crystal display
... by pentacene transistors. Electronic stability of pentacene transistors is always a significant factor of consideration, regardless of ...of pentacene transistors is presented ... See full document
6
High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics
... gate bias minus ini- tial threshold voltage 共V G − V th int ...gate bias increases, R ph is ...generated in the band-bending region are swept away by the electric field 共from applied gate voltage V G ... See full document
4
Electric field-induced structural changes in pentacene-based organic thin-film transistors studied by in situ micro-Raman spectroscopy
... of pentacene in an operating OTFT device were studied by applying a gate and drain field com- bined with in situ Raman ...polycrystalline pentacene solid film by applying the ... See full document
3
Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
... studies in the literature indicate that the instability of ZnO-based TFTs is different from amorphous hydrogenated silicon TFTs or polycrystalline silicon ...gate bias stress is considered to be the ... See full document
4
Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
... environmentally dependent electrical performance as a function of hysteresis phe- nomena for amorphous indium–gallium–zinc-oxide (a-IGZO) thin film transistors ...great influence on the ... See full document
4
Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors
... the pentacene grown on the PMMA surface had better molecular microstructure as compared to the film based on the SiO 2 ...both pentacene films are virtually the same. At the same time, the ... See full document
3
Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors
... negative bias temperature instability 共NBTI兲 and positive bias temperature instability 共PBTI兲 were studied for low-temperature polycrystalline silicon complementary thin-film ...highly ... See full document
4
Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors
... proposed charge pump- ing method and the accumulation of electrons in the a-IZO ...The charge pumping was acted by a 5 V constant voltage on the gate ...verified in advance so as not to ... See full document
4
Effect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristics
... Introduction In recent years, pentacene-based organic molecular semi- conductors have been commonly used to fabricate active elements in optoelectronic devices owing to their low processing ... See full document
7
Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
... attention in recent years as candi- date materials for the use in thin film transistors 共TFTs兲 in photoelectric ...studied in a device structure with a passivation layer ... See full document
4
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
... (a-IGZO) thin- film transistors (TFTs) have attracted attention for applica- tion in the next generation display industry owing to their high mobility (10 cm 2 /V s ), superior uniformity, and ... See full document
4
Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes
... organic thin-film transistors 共OTFTs兲 have been attracting much attention because of their rela- tively low cost and the feasibility of fabricating them on flexible organic substrates at low ...als ... See full document
4
Realization of ambipolar pentacene thin film transistors through dual interfacial engineering
... field-effect transistors 共OFETs兲 are the key elements because of their extraordinary advantages, such as low cost, large- area coverage, mechanical flexibility, and low-temperature ...adopted in numerous ... See full document
7
相關主題