[PDF] Top 20 Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K

... of GaN-based VCSELs from optical pumping to electrical ...DBR by insertion of SL layers and using the high reflective Ta 2 O 5 /SiO 2 as dielectric mirror to achieved laser operation under optical ... See full document

... the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser ...The GaN-based VCSEL has a ten-pair InGaN/GaN ... See full document

... light emitting diodes and laser diodes. 1,2 So far, GaN-based edge emitting lasers have been demonstrated and applied in commercial products for high density optical storage appli- ... See full document

... effective current injection is required for the low threshold current operation since the current leak- age paths can be vertically passing through the InGaN MQW and/or horizontally extending ... See full document

... His current research interests include the design, epitaxial growth, process, and characterization of optoelectronic devices such as Fabry–Perot type semiconductor lasers, vertical-cavity ... See full document

... of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and ... See full document

... GaN-based blue/violet vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention due to many advantageous properties over edge-emitting ... See full document

... performed by using a probe station and driven by a Keithley 238 CW current ...collected by a 25 µm diameter multimode fiber using a microscope with a 40X objective and fed into the ... See full document

... the injection current density make the corre- sponding threshold current ...threshold current 共I th 兲 of 22 mA, which is mainly due to a large detuning of over 50 ... See full document

... DBRs, GaN/InGaN microcavities, and dielectric DBRs. GaN-based VCESLs with two dielectric DBRs were also proposed by Song et ...of GaN VCSELs: one with hybrid type DBRs which consist of ... See full document

... emission at hetero-interfaces, as well as spontaneous and defect-related Shockley-Read-Hall (SRH) recombination of carriers were used to determine the carrier transport ...calculated by a free carrier model ... See full document

... of current-injected III-N based vertical-cavity surface-emitting lasers (VCSELs) with three types of current confinement schemes: the conventional planar-Indium Tin ... See full document

... There are some reports about the lasing action of GaN-based VCSEL which usually happens in a region of few micro- meters under optical and electrical pumping. 1–3) The lasing behavior can be attributed to ... See full document

... smooth surface and a high ...grown GaN/AlN ...grown GaN/AlN DBR with a reflectivity of ...using GaN/AlGaN or AlN/AlGaN super lattice (SL) insertion layers to reduce the biaxial tensile strain ... See full document

... of GaN-based vertical-cavity surface emitting laser ...edge emitting laser, including circular beam shape, light emission in vertical di- rection, and formation of ... See full document

... oxide-confined vertical-cavity surface-emit- ting laser (VCSEL) to pump a Nd:YVO 4 microchip ...higher injection current may cause an impediment of power ... See full document

... the injection current is increased beyond the threshold, the total emitted power and the intensity of the ring in the far field ...with current: since the feedback wavelength is fixed, the red-shift ... See full document

... properties. By modifying HCG parameters such as the grating height, pe- riod and width, high reflectivity reflectors with broad stop- band width, and specific polarization could be achieved and applied for many ... See full document

... Keywords: GaN; InGaN; quantum dot; vertical-cavity surface-emitting laser; wide-gap semiconductor INTRODUCTION Semiconductor lasers have attracted much attention since their ... See full document

... of current injected GaN vertical cavity surface emitting lasers at room temperature,” ...of Current Injected GaN-Based ... See full document