[PDF] Top 20 Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratio
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Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratio
... fabricated self-aligned Si/Ge T-gate poly-Si thin-film transistors (Si/Ge T-gate TFTs) with a thick ... See full document
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Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current Ratio
... TiN/Ni thin film was deposited by sputtering, and Ni-salicidation was carried out at 450 ◦ C for 30 s by rapid thermal ...vices with self-aligned n + S/D and Ni-salicidation were also ... See full document
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Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
... output characteristics typical for a GAA twin poly-Si NW TFT after NH 3 plasma treatment for 1 ...saturation current was 12.2 μA/μm at values of V ds and V gs of ...performance ... See full document
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Planar junctionless poly-Si thin-film transistors with single gate and double gate
... the off-current of the DG structure is one order lower than that of the SG ...top gate, the DG devices also showed better electrical characteristics than the SG ones, such as a ... See full document
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Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thickness
... operation of the JL devices is drastically different from that of conventional MOSFETs, which rely on the formation of a surface inversion layer be- tween the source and the ...applied ... See full document
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Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching Structures
... transfer characteristics and the enlarged ON -state currents graph of the GO-15-nm VSA-TFTs with W mask = 1 µm and different L mask ...The OFF -state currents can be improved by ... See full document
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Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
... ONCLUSION High-frequency characteristics of poly-Si TFTs with dif- ferent channel thicknesses were ...investigated. With short gate length (∼0.22 μm) and salicide ... See full document
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Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
... the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ul- trathin and heavily phosphorous doped ...performance with a ... See full document
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High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
... TFTs with lateral grain growth and the non-SA BG ...process of masker aligner, and the offset length can be further reduced by using the I-line stepper ...processes of new SA TFTs and conventional ... See full document
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Fabrication of High-Performance Poly-Si Thin-Film Transistors With Sub-Lithographic Channel Dimensions
... Transfer characteristics of devices with various are shown in ...are with same of 174 ...device with shorter channel length, the devices exhibit comparable SS, in- dicating that ... See full document
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Characterizing fluorine-ion implant effects on poly-Si thin-film transistors with Pr2O3 gate dielectric
... the poly- crystalline silicon thin-film transistors (poly-Si TFTs) with high- Pr 2 O 3 as gate dielectric is investigated for the first ...3 gate ... See full document
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Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
... SUPPRESSION OF THE FLOATING-BODY EFFECT IN POLY-SI THIN-FILM TRANSISTORS 635 ...Transfer characteristics of the conventional and the SSOB-TFTs with W=L = 50 ... See full document
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The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
... silicon thin-film transistors 共poly-Si TFTs兲 have been widely used in many potential applications including three- dimensional 共3D兲 integration high density flash memories, pixel ... See full document
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High voltage characteristics of junctionless poly-silicon thin film transistors
... silicon film can be treated as the series of three resistors (source extension, channel, and drain extension ...ance of the channel differs from that of source/drain exten- sion regions ... See full document
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Operations of poly-Si nanowire thin-film transistors with a multiple-gated configuration
... Transconductance characteristics of an NW device under various modes of ...V) characteristics under various ...compared with the SG ...area of the NW channel for on-state ... See full document
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High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure
... Ni self-aligned silicided (fully Ni- salicided) source/drain (S/D) and gate polycrystalline silicon thin- film transistors (FSA-TFTs) have been successfully fabricated on ... See full document
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Fabrication of high performance low-temperature poly-Si thin-film transistors using a modulated process
... the gate insu- lator. A second poly-Si film was subsequently deposited and pat- terned to define the gates of the ...oxide on the source/drain regions served as the etching stop ... See full document
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Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
... silicon thin-film transistors 共poly-Si TFTs兲 have been widely used in many applications, espe- cially for active matrix liquid phase crystal displays ...attraction of the ... See full document
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Near-infrared femtosecond laser crystallized poly-Si thin film transistors
... overlapping of neighboring pulses was fixed at 95%. FLA was conduced on a substrate heated at 400 °C in a vacuum ...movie of the annealing process is available ...for transistors with ... See full document
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Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
... effects of MG con- figuration on the characteristics of poly-Si ...trigate poly-Si NWTFT that can be fabricated without resorting to advanced lithographic tools is ... See full document
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