[PDF] Top 20 Effect of phonon scattering on free-carrier absorption in quantum well structures
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Effect of phonon scattering on free-carrier absorption in quantum well structures
... Free-carrier absorption coefficient for the deformation- potential coupling as a function of the photon frequency for photons polarized: (a) parallel to the layer plane an[r] ... See full document
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Effect of electron-phonon scattering mechanisms on free-carrier absorption in quasi-one-dimensional structures
... Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan b Department of Applied Mathematics, National Chiao Tung University, Hsinchu, Taiwan Abstract The free-carrier ... See full document
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EFFECT OF PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN N-TYPE INDIUM-ANTIMONIDE FILMS
... However, when the piezoelectric scattering is dominant, the free-carrier absorption coefficient increases with decreasing temperature for photons polarized perpendicular[r] ... See full document
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Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures
... FWHMs of these spectra also increase from 36 to 49 meV for SQW sample, while broadening of linewidth from 67 to 74 meV for stair- shaped SQW, in the ...electron–phonon scattering ... See full document
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Carrier-carrier scattering in GaAs/AlxGa1-xAs quantum wells
... evolution of the electron and hole distribu- tions is followed for 150 fsec, the LO-phonon emission ...measured in our experiments. At higher densities sidebands can be observed in the final ... See full document
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Size dependence of the electronic structures and electron-phonon coupling in ZnO quantum dots
... 共EPC兲 in nanomaterials has attracted much attention in the past years because great in- terest exists to elucidate its fundamental physics and poten- tial ...increase of the strength of ... See full document
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Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers
... simulations of wave guiding, carrier transport, and heat flux. The carrier-trans- port model includes drift and diffusion of electrons and holes in ...heterointerfaces of ... See full document
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Optical phonon emission in GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures
... photoexcited carrier densities are deter- mined from the laser spot size on the sample and the absorption coefficient of the QW samples at the excitation ...density of the laser used ... See full document
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Effect of double heterojunctions on the plasmon-phonon coupling in a GaAs/Al(0.24)Ga(0.76)As quantum well
... dependence of the AELR on the sheet carrier density, where the solid line represents the AELR with the PPC while the dash line the AELR without the ...density of 10 11 cm −2 . The enhancement ... See full document
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The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
... Abstract In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN ... See full document
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Pump-probe measurements of carrier capture times in quantum well structures
... With degenerate and nondegenerate pump-probe configurations, we can measure the decay time of carriers in the barrier states and the rise time of carriers in the confined subbands in b[r] ... See full document
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The effect of electron-phonon interaction on the impurity binding energy in a quantum well
... confined phonon modes in a quantum ...concentrated on the polaron effect on the ground state of an impurity in a quantum ...construction of ... See full document
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Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures
... slow decay time of the three samples are shown as functions of emission photon energy in the upper portion of Fig. The decay time r2 increases with decreasing photon energy for each of a[r] ... See full document
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Effect of electron-phonon scattering on shot noise in nanoscale junctions
... the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic ...energy of the junction is larger ... See full document
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Saturation of the free carrier absorption in ZnTe crystals
... intensity of PL signal can be ...dependence of the intensity of the PL signal on pumping-fluence is shown in ...fluences of less than 6.36 mJ/cm 2 , the intensity of the ... See full document
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EFFECTS OF ELECTRON-PHONON INTERACTION ON EXCITON BINDING-ENERGY IN A QUANTUM-WELL
... 1 and 5 shows that al- though the total binding energy of light-hole ex- citon including the surface and bulk phonon effect is larger than that of the heavy-h[r] ... See full document
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Femtosecond carrier dynamics in InGaAsN single quantum well
... The differential transmission trace for the 1330 nm sample (with even narrower bandgap energy 0.93 eV) with the same pump fluence still shows a negative step (Fig.. This [r] ... See full document
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Effect of electron-phonon interaction on the impurity binding energy in a quantum wire
... physics of impurity states in quantum wire is very interesting because speci"c properties can be easily achieved by varying the wire ...impurity on the axis of the quan- tum wire ... See full document
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Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures
... It is found that with either InGaN or InN thin layers, silicon-doped or un-doped, the photon emission efficiency is improved, when compared with a standard InGaN/GaN [r] ... See full document
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Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering
... Conclusion In conclusion, we have studied the dependence of the band gap blueshift on the annealing temperature and dielectric layers from the InGaAsP/InP multiple quantum wells prepared by ... See full document
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