[PDF] Top 20 Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

... blue/violet vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention due to many advantageous properties over edge-emitting lasers, including ... See full document

... out of the current ...the GaN-based VCSEL structure, the strain-induced polarization field could adversely lower the barrier height, which the leak- age current could still occur in the ... See full document

... The optically pumped laser has a threshold energy of 55 nJ and a high degree of polarization of ...spontaneous emission coupling factor of 6 × 10 −2 is estimated from the ... See full document

... gain characteristics and linewidth enhancement factor (α-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by ... See full document

... development of GaN-based VCSELs from optical pumping to electrical ...insertion of SL layers and using the high reflective Ta 2 O 5 /SiO 2 as dielectric mirror to achieved laser operation ... See full document

... a surface emitting laser. 1,2 This kind of PC surface emitting lasers 共PCSELs兲 could be considered as a candidate for perfect single mode emission over a large area, high ... See full document

... light emitting diodes and laser diodes. 1,2 So far, GaN-based edge emitting lasers have been demonstrated and applied in commercial products for high density optical storage appli- ... See full document

... The characteristics of the fabricated device were performed by using a probe station and driven by a Keithley 238 CW current ...The emission light was then collected by a 25 µm diameter multimode ... See full document

... gap GaN-based optoelectronic devices, light emitting devices and lasers in particular, have become impor- tant devices for practical ...electrically pumped GaN-based ... See full document

... evidence of threshold behavior was observed at a pumping energy density of E th ¼ 21:5 mJ/cm 2 ...spontaneous emission factor, which indicated the coupling efficiency of the spontaneous emis- ... See full document

... for GaN-based vertical-cavity surface emitting lasers (VCSELs) that we demonstrated recently ...small emission spots observed in the GaN-based VCSELs, ... See full document

... temperature of about 244 K by linear fitting the experiment data. The high of our sample within the temperature range could be due to various ...shift of about ...PL emission of the MQW ... See full document

... computation of semiconductor transport equations, the optical gain and mode, the quantum well band structure, was employed to model above mentioned VCSEL ...diffusion of electrons and holes, built-in ... See full document

... developments of III-nitride semiconductors are rapidly increased due to their promising potential for practical light emitting diodes and laser diodes ...wide-direct-bandgap characteristics are ... See full document

... operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” ...“Characteristics of Current Injected ... See full document

... 共a/␭兲 of PCSEL de- vices with different lattice constants can be grouped into three values of ...constants of 190, 210, and 230 nm, respectively. To further investigate the out-of- plane ... See full document

... demonstration of a GaN-based high-Q vertical-cavity light-emitting diode ...The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN ... See full document

... study of using a large area oxide-confined vertical-cavity surface-emit- ting laser (VCSEL) to pump a Nd:YVO 4 microchip ...behavior of VCSELs in the higher injection current may cause ... See full document

... INTRODUCTION Vertical-cavity surface-emitting lasers (VCSELs) are very appealing light sources for use in high-capacity commu- ...benefits of VCSELs include single ... See full document

... near-field emission profiles of oxide confined GaAs vertical cavity surface emitting lasers (VCSELs) with 20µm aperture have been investigated at different operating ... See full document