[PDF] Top 20 GaN alternating current light-emitting device
Has 2606 "GaN alternating current light-emitting device" found on our website. Below are the top 20 most common "GaN alternating current light-emitting device".
GaN alternating current light-emitting device
... the light-emitting device which can be operated under alternating current sour- ce ...type alternating current driven light-emitting device (AC LED) ... See full document
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Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
... Single-Chip GaN-Based Alternating Current Light-Emitting Diode Hsi-Hsuan Y EN , Hao-Chung K UO , and Wen-Yung Y EH 1 Institute of Electro-Optical Engineering, National Chiao Tung ... See full document
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Blue organic light-emitting device with low driving voltage and high current efficiency
... organic light-emitting device with low driving voltage and high current efficiency Jiun-Haw Lee* a , Tien-Chun Lin a , and Chi-Chih Liao b a Graduate Institute of Electro-Optical Engineering ... See full document
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Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template
... mA current (i.e., current density : 125A/cm 2 ) into the ...the current spreading in LEDs, the emission intensity of each LED was ...output light was emitted uniformly across the chips since ... See full document
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Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays
... quantum-well-based light-emitting diode (LED) arrays with various cell ...of current spreading in the LED arrays of different sizes and conclude that the effect of current spreading needs to ... See full document
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GaN-based microcavity polariton light emitting diodes
... b E. L. Ginzton Laboratory, Stanford University, Stanford California 94305, United States ABSTRACT Here we report the first realization of a current injection microcavity GaN exciton-polariton light ... See full document
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Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
... on current–voltage properties of GaN light emitting diodes 共LEDs兲 has been ...in GaN and both Ni and Au were indiffused into the LED structure along the cores of the ... See full document
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High brightness GaN-based light-emitting diodes
... the light extraction ...and device reliability testing, an improvement of epitaxial quality was observed by adopting this ...guided light scattered by bottom diffuse omnidirectional reflectors can be ... See full document
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Study on organic light emitting device with more balanced charge transport
... organic light-emitting device (OLED) has raised many attentions both in scientific society and commercial industry due to its advantages such as flexibility [1], light-weight, ... See full document
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Phosphorescent Organic Light-emitting Device with an Ambipolar Oxadiazole Host
... driving current due to severe triplet-triplet ...our device 5 关Ir共ppy兲 3 = 3 % 兴, the current effi- ciency increases rapidly then decreases slowly with increas- ing the driving ...a device, ... See full document
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Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
... output powers were 8.60 and 6.15 mW for the NR LED and C LED, respectively. With 20-mA injection current, it was found that we achieved a 39.8% enhancement in output power from the NR-LED, as compared to ... See full document
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High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
... II. D EVICE S TRUCTURE AND F ABRICATION The LED wafers were grown by metal–organic chemical va- por deposition (MOCVD) on a sapphire substrate. The active region of the LED was a ten-period In x Ga 1−x N/GaN based ... See full document
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Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
... the light extraction rate and to incorporate the width of contact ring, a diameter of 800 m for the anisotropic etching region was ...of GaN were different radically. As a result, a concaved n-GaN ... See full document
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High Q microcavity light emitting diodes with buried AlN current apertures
... [doi:10.1063/1.3617418] GaN-based materials have attracted a great attention since the early 1990s due to the wide direct band gap and the promising potential for the optoelectronic devices such as light ... See full document
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InGaN/GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks
... B. Device Properties of Nanorod LEDs Fig. 6 shows the current–voltage diode curve of a nanorod LED array and that of a planar LED is also plotted for com- ...and GaN semi- conductor interface and ... See full document
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Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate
... the current density is higher than 165 A /cm 2 , as shown in ...high current density room temperature dc operations are comparable or better than the state-of-the-art c-plane LEDs operated at a pulsed ... See full document
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Room Temperature Current Injection Polariton Light Emitting Diode with a Hybrid Microcavity
... injection current from ...injection current, the two polariton peaks are progressively close to each other, leading to the decrease in normal mode splitting from ...the current density, and τ is the ... See full document
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GaN-based light-emitting diodes prepared on vicinal sapphire substrates
... GaN-based light-emitting diodes prepared on vicinal sapphire substrates ...and GaN-based light-emitting diodes (LEDs) on conven- tional and vicinal cut sapphire substrates are ... See full document
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High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
... and light extraction efficiency are two important problems. The GaN-based devices are often epitaxially grown on ...grown GaN epitaxial layer has high crystal dislocation density, typically in the ... See full document
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High Efficiency Fluorescent Blue Organic Light-emitting Device with Balanced Carrier Transport
... the emitting layer 共EML兲, respectively. A device with similar combina- tion of the organic materials reported by Lee et ...a current efficiency of ...low device efficiency and shortens the ... See full document
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