[PDF] Top 20 Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
... Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain- growth nanowire channels ... See full document
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-kappa Eu2O3 gate dielectrics
... of polycrystalline silicon thin-film transistors with high- Eu2O3 gate dielectrics Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng Chao, and Tung-Ming Pan Citation: ... See full document
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High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
... TFT with a nanowire structure and multilayer ONO gate ...TFT with ONO gate dielectric has better electrical properties compared to the standard TFT with a TEOS oxide ...multiple ... See full document
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CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
... In contrast to conventional TFTs with pure thermal oxides as gates, TFTs with 0/N gate structures can attain a higher ON/OFF current ratio and carrier mobility by reducing the equivalent[r] ... See full document
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CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER
... Figure 1 l(a) shows an original distribution of positive charges incorporated in both the gate oxide and the passivation layer above the offset region after hydrogen plasma [r] ... See full document
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High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits
... the grain boundaries in the channels for the bottom-layered and top-layered ...poly-Si thin film, Fig. 2a and b show the SEM images of the films without and with optimum laser irra- diation ... See full document
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High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
... Polycrystalline silicon thin-film transistors 共poly-Si TFTs 兲 have attracted considerable attention because they can be used in active-matrix liquid crystal displays, since they perform ... See full document
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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... devices with grain bound- aries in the drain junction is further investigated using an- other single TFT-B, which was first stressed in reverse mode for 10 4 s and then directly stressed in forward mode for ... See full document
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Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
... channel film, the active region was patterned by dry etching. A 50-nm gate oxide was then deposited using a plasma-enhanced chem- ical vapor deposition (PECVD) system at 300 ◦ ...the gate electrode. ... See full document
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Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
... poly-Si thin films were analyzed by transmission electron microscopy 共TEM兲 and scanning electron micros- copy 共SEM兲, ...poly-Si thin films were etched to form the device active ...orthosilicate gate ... See full document
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Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation
... 3 gate dielectric/ poly-Si channel interface are not changed with various nitrogen ...the grain boundary trap states within poly-Si film during conventional SPC anneal- ... See full document
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Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
... fabricated with top-gated ...poly-Si film with a grain size of ...after gate patterning and source/drain for- ...mated gate-channel capacitance C gc ... See full document
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A reliability model for low-temperature polycrystalline silicon thin-film transistors
... amorphous silicon layer was deposited by PECVD and crystallized into a polycrystalline silicon film through excimer laser ...fabricated with channel width (W ) of 20 µm and channel ... See full document
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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
... a grain struc- ture in one of the ten nanowire MILC poly-Si TFTs 共M10兲 following Secco solution ...lateral grain size in M10 TFT is around 520 nm, which is larger than that of those in S1 ... See full document
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Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels
... 521 Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels Chun-Jung Su, Tzu-I Tsai, Yu-Ling Liou, Zer-Ming Lin, Horng-Chih Lin, Senior ... See full document
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Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
... x film, the feature size of the SiN x units could be scaled down to the nanoscale without using any advanced photolithography ...poly gate, self-aligned phosphorous ion implantation was ... See full document
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High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
... 1564 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 11, NOVEMBER 2012 Fig. 4. Comparison of the ratio of on-current degradation for the GBLC, conv- ELC, and SPC NW TFTs during the ac stress. leading to its better electrical ... See full document
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Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer
... layer polycrystalline and generate grain boundaries (GBs) in the thin ...the polycrystalline CT layer may result in a nonuniform dis- tribution of the charges stored inside the ... See full document
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Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
... Polysilicon thin-film transistors 共poly-Si TFTs兲 are widely used to integrate driver circuits for active-matrix liquid-crystal displays due to its high field effect mobility and driving ...memory ... See full document
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Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
... and gate regions at 550 ...work, with SiH 4 and GeH 4 gas flow rate of 5 and 2 sccm, respectively, a longer incubation time compared to our previous results could be ...poly-SiGe film up to 100 nm ... See full document
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