[PDF] Top 20 Grain growth in electroplated (111)-oriented nanotwinned Cu
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Grain growth in electroplated (111)-oriented nanotwinned Cu
... large nanotwinned grains A, B and C grew downward to consume the fine grains below them, and densely packed nanotwins also formed in the same ...illustrated in Figure ...into nanotwinned ... See full document
4
Effect of grain orientations of Cu seed layers on the growth of < 111 >-oriented nanotwinned Cu
... the growth of Cu films on two different Cu seed layers: one with regular ...densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong ... See full document
4
Fabrication and Characterization of (111)-Oriented and Nanotwinned Cu by Dc Electrodeposition
... presented in Figure 4. This may be attributed to an increase in the Cu deposition rate as the current density ...the electroplated Cu film cannot be grown epitaxially on the Cu ... See full document
5
Microstructure control of unidirectional growth of eta-Cu6Sn5 in microbumps on < 1 1 1 > oriented and nanotwinned Cu
... single-crystal Cu. None of this earlier research has shown the orientation of Cu 6 Sn 5 after the surface morphol- ogy had ...disappeared. In this study, we showed that the preferential growth ... See full document
10
Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper
... Variation in the grain orientation may lead to a wide distribution of the orientation-dependent properties of microbumps, which may in turn lead to early failure and low ...certain grain ... See full document
5
Extremely anisotropic single-crystal growth in nanotwinned copper
... o1114 oriented, and the average grain size for this condition is ...the Cu film possesses an extremely high o1114 texture, as illustrated in Figure ...the Cu (111) grains in ... See full document
8
Correlation between the Microstructures of Bonding Interfaces and the Shear Strength of Cu-to-Cu Joints Using (111)-Oriented and Nanotwinned Cu
... the Cu pillar bumps and the Cu films was achieved at a temperature gradient ranging from 200 ◦ C/100 ◦ C to 350 ◦ C/100 ◦ C in N 2 ...the nanotwinned columnar grains remained in the ... See full document
7
Exaggerated grain growth in Ni-doped BaTiO3 ceramics
... As the Ni content is higher than the solubility limit, the growth of large BaTiO 3 grains is prohibited. As stated above, the addition of fine NiO particles introduces many vacancies into BaTiO 3 . However, the ... See full document
5
Formation of nearly void-free Cu3Sn intermetallic joints using nanotwinned Cu metallization
... integration in a 3D ...nickel in terms of ...(IMCs): Cu 6 Sn 5 and Cu 3 Sn. 3–6 The Cu-Sn interme- tallic compound has become very important for electronics ...the Cu-Sn ... See full document
5
Mechanism for Cu void defect on various electroplated film conditions
... or in an aged electrolyte easily generate void defects after chemical mechanical polishing ...an electroplated Cu film are found to have strong correlation with the formation of void ...partial ... See full document
4
Wettability of electroplated Ni-P in under bump metallurgy with Sn-Ag-Cu solder
... rate. In this study, the effect of different phosphorous acid contents was investi- ...listed in Table ...deposit in- creases with phosphorous ...represented in Table ... See full document
8
Power consumption reduction scheme of magnetic microactuation using electroplated Cu-Ni nanocomposite
... then electroplated in the afore- mentioned Cu–Ni colloidal solution added with 2 g / l Ni nanopwoders to form a 2 m thick magnetic Cu–Ni nano- composite ...placed in a vertical ... See full document
4
Grain Growth Behavior of Bi2O3-Doped ZnO Grains in a Multilayer Varistor
... large grain approaching the layer thickness, the electrical breakdown is then determined by the very large ...the grain size distribution is wide in the beginning of ...and in at least some ... See full document
8
Fabrication of (111)-Oriented Nanotwinned Au Films for Au-to-Au Direct Bonding
... formation in Cu 3 Sn [2], and causing a brittle interface to ...Thus in order to fulfill Moore’s Law, it is suggested to implement direct bonding of metals, effectively solving the problem of ... See full document
11
Growth of high performance single grain Y-Ba-Cu-O Bulk superconductor with sol-gel derived Y2Ba4CuAgO addition
... single grain Y-Ba-Cu-O bulk superconductor with sol-gel derived Y 2 Ba 4 CuAgO y addition Po-Wei Chen 1 , Chien-Ju Liu 1 , Shih-Yun Chen 2 , In-Gann Chen 1* and Maw- Kuen Wu 3 1 Department of ... See full document
1
A novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions
... During excimer laser irradiation, this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from th[r] ... See full document
4
Effects of mesoporous structure on grain growth of nanostructured tungsten oxide
... for grain growth has yet been ...the grain size is re- duced to the length of space charge layer. 9 In the sol-gel process, however, grain growth usually accompanies heat ... See full document
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Asymmetrical growth of Cu6Sn5 intermetallic compounds due to rapid thermomigration of Cu in molten SnAg solder joints
... (VLSI) in silicon chip tech- nology, three dimensional integration circuit (3D IC) emerges to be a promising solution to scaling limit in VLSI circuits ...[1,2]. In 3DIC, a Si chip is stacked on ... See full document
4
Anisotropic grain growth and crack propagation in eutectic microstructure under cyclic temperature annealing in flip-chip SnPb composite solder joints
... phase in both iso- thermal and cycling annealing. This is because in a bin- ary eutectic phase diagram such as SnPb, below the eutectic temperature, a constant temperature line is a tie-line of constant ... See full document
4
Highly oriented diamond growth on positively biased Si substrates
... substrate in the negative bias condition, while electrons attacked the substrate and then adsorbed carbon-containing molecules in the positive bias condi- ...10 In the present positive BEN condition, ... See full document
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