[PDF] Top 20 The improved stability of deuterated amorphous silicon thin film transistor
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The improved stability of deuterated amorphous silicon thin film transistor
... It is demonstrated that the stability, i.e., the shifts of threshold voltage and subthreshold swing, of deuterated amorphous silicon thin film transistor can be indeed [r] ... See full document
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Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
... rate the photoinduced electron-hole pairs, the increased density of states serving as recombination centers in a-Si: H共:F兲 channel material has resulted in the lower photo- ...with the ... See full document
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Nitrogenated amorphous InGaZnO thin film transistor
... Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping ... See full document
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High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor
... operation of an oxygen sensor can be reproduced by visible light ...verify the characteristics of an oxygen sensor, time evolution of I D before and after illumination for 120 s in oxygen ... See full document
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Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability
... ) of oxide TFT. Whereas the desorption of oxygen atoms in the back channel will result in the left shift of V th ...shield the back channel of a-IGZO layer from ... See full document
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Photosensor application of amorphous InZnO-based thin film transistor
... on the inverted coplanar structure TFT device fabricated on a glass ...cleaning the glass substrate, a 100-nm-thick MoW layer was formed and patterned, serving as gate electrode by a DC sputtering ...layer ... See full document
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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
... with the previous reports ...those of sample ...as the back channel layer, has less oxygen vacancies in the entire channel layer, thereby lead- ing to a lower free electron density in ... See full document
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Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors
... 2012 The Electrochemical ...2012. The commercial success of active-matrix liquid-crystal displays (AM-LCDs) has attracted much research into the performance im- provement of ... See full document
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Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
... transparent amorphous InGaZnO thin films have received considerable attention for their use in next-generation active-matrix liquid-crystal display (AMLCD) and organic light-emitting diode display (AMOLED) ... See full document
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The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
... Abstract The effects of hydrogenated microcrystalline silicon (mc-Si:H) ®lm with various crystalline factors on thin-®lm transistors (TFTs) with low-high-low band gap structure are ... See full document
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The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
... Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan, ...investigated the gate bias stress-induced instability on the electrical properties with different ... See full document
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Crystalline ρMOS inverter using amorphous thin film transistor as active load
... The integration of the amorphous silicon (a-Si : H) thin film transistor on top of a crystalline ptype silicon metal-xide semiconductor (PMOS) transistor to serve as active loa[r] ... See full document
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Low cost high-efficiency amorphous silicon solar cells with improved light-soaking stability
... diffusion of the reactive radicals on a substrate at fairly low deposition ...reduce the ion bombardment on the growing surface and yields a film with low density of ...that thin ... See full document
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Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors
... Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, ...passivation-based amorphous silicon (a- Si) thin film transistor (TFT) device ... See full document
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The Time Response of the On-Current for the Amorphous In-Ga-Zn-O Thin Film Transistor to the Illumination Pulse
... and stability in the dark state, the significant electrical instability is observed when they are ...In the applications of trans- parent electronics and photo sensor, the a-IGZO ... See full document
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Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization
... V of the three highest performing devices of both types. The distribution of the transfer characteristics is typical for both ...that the on-current of the ... See full document
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Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
... that silicon dioxide (SiO 2 ) and silicon nitride (SiN x ) deposited by plasma-enhanced chemical vapor deposition (PECVD) may cause the degradation of a-IGZO TFTs due to plasma-induced ... See full document
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Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
... investigate the merits of an independent double-gated configuration for nonvolatile memory ...to the convention where the programming/erasing gate also acts as the read gate, a ... See full document
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Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
... shows the typical output characteristics of stan- dard and pi-gate ...work, the pi-gate device has the highest driving current due to the larger effective channel ...to the ... See full document
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Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate
... polycrystalline silicon 共LTPS兲 process. Because the roughness of bare steel foil was not suitable for TFT process, it was mechanically polished ...on the polished steel foil in order to obtain ... See full document
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