[PDF] Top 20 Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

... axis) of InAs(Sb) surface QDs versus Sb beam equivalent ...pressure. by the uniformity of the sizes and surface of the SQDs for which the Sb ... See full document

... redshift of the QD emission due to a reduction of the residual compressive strain, the strain-driven decomposition of the InGaAs layer, and the lowering of ... See full document

... study of two 30 layers vertically stacked InAs/GaAs QD systems with different spacer layer ...identify the coupling effects between the stacked QDs we have used a structure with one QD layer ... See full document

... Semiconductor quantum dots 共QDs兲 are of great interest in both fundamental and technological points of view, due to their unique physical and optoelectronic properties, in par- ticular, ... See full document

... One of the important issues for device applications is the ability to modify the size, shape, and density of the ...However, the self-assembled ... See full document

... INTRODUCTION Self-assembled quantum dots 共QDs兲 ...deal of attention due to their scien- tific studies and promising technological ...extending the emission wavelength for ... See full document

... INTRODUCTION InAs/ GaAs self-assembled quantum dots 共QDs兲 ...length of 1.3 or 1.55 ␮ m. Self-assembled GaInNAs QDs ...increase the wavelength to this range ... See full document

... image, the density of QDs was determined to be approximately 1 ⫻10 10 cm −2 ...performed by the 9SDH-2 Tandem accelerator at National Tsing Hua ...University. The beam divergence was ... See full document

... acterization of self-organized quantum dots ...generation of devices such as QD lasers, optical memory elements, and resonant-tunneling devices based on quantum dots, it ... See full document

... Abstract The emission dynamics properties of self-assembled InAs quantum dots with different cap layers are investigated by steady-state and time-resolved ... See full document

... Institute of Physics. 关DOI: 10.1063/1.2150258兴 I. INTRODUCTION InAs/ GaAs self-assembled quantum dots 1–7 共QDs兲 have attracted considerable interest in fundamental physics and ... See full document

... EXPERIMENT The QD sample was grown by molecular beam epitaxy. 29 A layer of InAs self-assembled QDs ...on the wafer ranging from 10 8 to 10 10 cm −2 . The QDs were ... See full document

... from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer ...thickness. The ... See full document

... INTRODUCTION Quantum-dot 共QD兲 structures prepared by molecular beam epitaxy 共MBE兲 have attracted much attention in recent years due to their unique optical and electrical ...1–3 The ... See full document

... on the properties of InAs/GaAs QDs struc- tures grown by ...states of QDs have been observed and ...below the funda- mental transition has been attributed to optical ... See full document

... Recently self-assembled InAs quantum dots 共QDs兲 with a thin antimony-containing capping layer ...because of its great capability of extending the emission ... See full document

... 本文旨在介紹自聚式量子點的特性、製程與應用，並 以砷化銦 砷化鎵 (InAs/GaAs) 為基礎的自聚式量子點 為例，分析其機械及光學特性。文中首先以線彈性力學理 論，配合有限元素法套裝軟體，估算量子點內因異質材料 間的晶格不匹配所引致的應變場分佈；再將此應變場效 應，經由變形勢能，加入於薛丁格方程式中，而同樣以有 限元素法分析，藉以評估應變效應對於導電帶、價電帶的 特徵能量與電子、電洞機率密度函數分佈之影響，進而得 ... See full document

... 2005兲 The optoelectronic characteristics of self-assembled InAs quantum dots 共QDs兲 with strain-reduced layers 共SRLs兲 were investigated using photoluminescence 共PL兲 ... See full document

... Low temperature ( at 20K) photoluminescence (PL) spectra were measured using argon laser for excitation. InGaAs detector and Si-PMT were used for light detection. Before each scan, t[r] ... See full document

... Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance Jenn-Shyong H WANG
, Mei-Fei C HEN , Kuang-I L IN , Chiang-Nan T SAI , Wen-Chi H ... See full document