[PDF] Top 20 Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon
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Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon
... Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon Shih-Yang Huang, Chuan-Chi Wang 1 , Chih-Lung Lin, Yu-Lin Tsai, Cheun-Guang Chao 1 ... See full document
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Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells
... layer of AZO above the FTO ...morphology of the FTO remains, while the deterioration of the FTO film properties can be reduced, even in the presence of a plasma atmosphere con- taining ... See full document
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Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films
... regions of the test specimens increases with the increasing compressive ...content of the MIC region determined ...detailed mechanism of MILC, remaining to be clari fied, the present study has, ... See full document
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Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon
... NILC mechanism. NILC poly-Si grains first appeared right above the top of the NIC area, and then extended to the surrounding ...areas of the gettering ... See full document
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Role of Bonded Interstitial Hydrogen in Hydrogenated Amorphous Silicon: A New Perspective
... ne of the models is that a weak Si-Si bond breaks when it traps the excess carriers, and a bonded hydrogen in the configuration of moves toward the site of the weak bond and terminates one of ... See full document
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Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
... thickness of 100 nm were then deposited by a low-pressure chemical vapor deposition (LPCVD) system at 550 ◦ ...kinds of samples were used in this ...native silicon oxide on the a-Si films was removed ... See full document
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Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures
... growth of NILC poly-Si is governed by the migration of NiSi 2 precipitates through ...potential of Ni is lower at the NiSi 2 /a-Si interface, whereas the chemical potential of Si atoms is ... See full document
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Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
... fronts of crystallization from opposite sides confront with each other at the central region of the ...amount of Ni species may be left inside the channel and leads to the degraded on-state ... See full document
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Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
... nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were ...phosphorous-doped amorphous silicon ( ␣- ... See full document
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Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
... attraction of applying polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 in active matrix liquid crystal display 共AMLCDs兲 lies in the greatly improved carrier mobility 共larger than 10 cm 2 /V s 兲 ... See full document
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Near-infrared femtosecond laser-induced crystallization of amorphous silicon
... Table of Contents: ...in Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser ... See full document
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Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon
... transistor, amorphous silicon, polycrystalline silicon, metal-induced crystallization, electroless plating and physical vapor deposition Low-temperature polycrystalline silicon ... See full document
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Characterizations of Metal Induced Lateral Crystallization Poly-Silicon 張志宇、黃俊達
... polycrystalline silicon（poly-Si）has received increasing attention because of its wide range application, such as Thin Film Transistor（TFT）for liquid crystal display, solar cell and image ...method of ... See full document
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Phase field modeling of excimer laser crystallization of thin silicon films on amorphous substrates
... ture of this model is that it treats the interface as a diffusive one having a finite thickness ␦ ...fitting of experimental data, such as supercooling and solute ...effects of sur- face tension, ... See full document
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Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
... Current density versus anodization time at 100 V anodization voltage showing the current density decreases as the anodization time increases at various pH values.. applie[r] ... See full document
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Optical Properties of Hydrogenated Amorphous Silicon
... effect of Si:H samples, we have set up an automatic rotating light pipe reflectometer to measure the reflectivity spectral of the ...part of the dielectric function is cal- culated by the ... See full document
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Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors
... success of active-matrix liquid-crystal displays (AM-LCDs) has attracted much research into the performance im- provement of thin-film transistors (TFTs), which function as the pixel switches in ...1 ... See full document
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High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization
... characteristics of the single-gate H-REC TFT (square pattern) and the dual-gate H-REC TFT (circle pattern) compared with the single-gate ELA TFT (triangle pattern), operated at saturation ...the lateral ... See full document
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Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors
... effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser- crystallized polycrystalline silicon TFTs were ...size of 400 lm 300 lm ... See full document
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Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
... higher lateral field because its gate control was more robust than that of the G1S1 [9], [10] Ni-MILC poly-Si ...ison of the single-gate (G1M10) and dual-gate (G2M10) with the same ten nanowire ... See full document
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