[PDF] Top 20 Microstructure and magnetic properties of the FeTaCN nanocrystalline thin films

... Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan 共Presented on 13 November 2002兲 FeTaCN films were deposited on quartz substrates by cosputtering ... See full document

... co-sputtering of Fe target and TaC composite target with Ar þ N 2 sputtering ...Effects of annealing temperature and sputtering power density of the Fe target on the ... See full document

... Institute of Physics, Academia Sinica, Taipei 115, Taiwan H. L. Huang Department of Physics, National Taiwan University, Taipei, Taiwan Effects of nitrogen contents and substrate temperatures ... See full document

... x films with x ⫽0 – 14 at. % are fabricated on glass and naturally oxidized silicon wafer substrates by dc magnetron ...sputtering. The magnetic film is sandwiched between SiN x protective ... See full document

... 300 and 750 °C. The annealing time was 15 min, and the film was quenched in ice water after ...annealing. The magnetic properties of the film at room ... See full document

... Institute of Physics, Academia Sinica, Taipei 115, Taiwan ...y thin films with x 535– 65 at. % and y50 – ...Effects of the chemical composition and annealing temperature ... See full document

... Torr. Magnetic properties of the FePt thin films were mea- sured by a vibrating sample magnetometer at room tempera- ture with maximum applied field of 13 ...kOe. ... See full document

... Co/Os/Co and Fe/Os/Fe thin films were deposited on natural oxidized Si (1 0 0) substrates at room temperature by magnetron ...sputtering. The thickness was kept at 100 A˚ for all the ... See full document

... nm. The as- deposited film was sealed in quartz capsule then postan- nealed in vacuum of 1 310 26 ...Torr. The magnetic properties of the films were measured with ... See full document

... EFFECTS OF CRRU UNDERLAYER AND CRRU CAPPED LAYER ON THE MICROSTRUCTURE AND MAGNETIC PROPERTIES OF FEPT FILMS 877 ...1. The variations of Hc ... See full document

... coercivity, and a nearly magnetically isotropic amorphous CoTb film could be obtained by annealing this film in vacuum at 250  C for 60 min ...studied the effects of Tb content on the ... See full document

... works of the noble metal Osmium (Os) systems, 9–12 Os has high melting and boiling point, which ∗ Author to whom correspondence should be ...that the Os layer is not a good layer for ... See full document

... dc and rf magnetron cosputtering of FePt, Cr, and Si 3 N 4 ...targets. The thickness of the films was kept at 10 nm in order to examine the possibility for applying ... See full document

... Recently, the most important problem in recording me- dia technology is how to increase the recording ...alloy thin films are the most widely used materials in longitudinal recording ... See full document

... 50%. The S ⬜ , H c ⬜ , and M s values of the 共CoPt兲 50 - 共SiN x 兲 50 /Ag films are about ...kOe, and 200 emu /cm 3 , ...Institute of Physics. 关DOI: 10.1063/1.2832342 兴 ... See full document

... ago, the most important problem in magnetic recording medium has been how to increase its recording ...density thin film medium needs high coercivity Hc and optimum remnant magnetization Mr ... See full document

... intensity and broadening appearance of this peak indicates that the obtained Ti 2 O 3 films should have rather defective and disordered ...possessing the most pronounced RTFM ... See full document

... in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t ¼ 5, 10 and 20 ...Both the in-plane coercivity (H cJ ) and the ... See full document

... 储 and Hc ⬜ of the FePt films expands with increasing the thickness of the Ag buffer layer may be as- cribed to the following reasons: 共1兲 In the film with ... See full document

... Institute of Materials Science and Engineering and Center for Nanostorage Research, National Taiwan University, Taipei 106, Taiwan b Department of Mechanical Engineering, De Lin Institute ... See full document