[PDF] Top 20 Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
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Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
... Recently, nonvolatile memory devices 共NVM兲 are mov- ing toward high density cell array, low operation voltage, and good ...performance memory application, such as quantum effect under thin ... See full document
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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
... Recently, the requirements of memory device are the high density cells, low power consumption, high-speed op- eration, and good ...All of the charges stored in a floating ... See full document
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Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
... provide the formation and memory effects of W nanocrystals nonvolatile memory in this ...study. The charge trapping layer of stacked a-Si and ... See full document
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Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
... investigate the reliability of NiSi NCs embed- ded in oxide and nitride layers, the retention tests are shown in ...used the same programing 共+10 V for 5 s兲 and erasing 共−10 V ... See full document
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Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory
... in the SiO 2 film around metal nanocrystals. The induced deficiency in the surrounding SiO 2 results in stored charges leaking out of the nanocrystals through trap-assisted ... See full document
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Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film
... charge-storage characteristics of samples A–C such as the memory window, retention, and ...endurance. The results are listed in Table I. The memory window of ... See full document
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Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
... shows the forward and reverse sweep capacitance-voltage 共C-V兲 characteristics, indicating the electron charging and discharging effects of CoSi 2 nanocrys- tals embedded in ... See full document
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Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
... Nonvolatile memory composed of a floating structure plays an important role in portable devices such as cell phones, notebook computers, and digital ...on the reduction in tunnel oxide ... See full document
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NiSiGe nanocrystals for nonvolatile memory devices
... Department of Physics, Institute of Electro-Optical Engineering, and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan 共Received 1 December ... See full document
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Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
... TEM of SiGeO layer after the RTO process at 900 °C for 60 s and the XPS analysis of charge trapping layer indicates that only GeO 2 peak existed in the Ge 2p spectra, as shown in ... See full document
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Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
... 共use of PACO step兲, and 共3兲 Ge nanocrystal embedded in SiO x 共no use of PACO ...case, memory window for C-V measurement was influenced by PACO process, as shown in ...because ... See full document
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Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment
... Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ...Department of Electronic Engineering, I Shou University, Kaohsiung 840, Taiwan, ...2012 The resistance switching ... See full document
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Cerium oxide nanocrystals for nonvolatile memory applications
... Tsai and Lurng-Shehng Lee Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China 共Received 25 July 2007; accepted 14 ... See full document
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Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
... improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and ...investigate the role of the oxygen plasma ... See full document
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Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
... Huang, and Tan-Fu Lei Abstract—We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory us- ing Ge nanocrystals ... See full document
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Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
... Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid ... See full document
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Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
... Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and ... See full document
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Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
... nanoscaled nonvolatile memory ...a memory-cell structure employing a semicon- ductor or metal nanocrystals as storage elements in metal- oxide-semiconductor 共MOS兲 field transistors has ... See full document
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Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process
... Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan 2 Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan Received November 30, ... See full document
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Annealing effects on the crystallization and shape memory effect of Ti50Ni25Cu25 melt-spun ribbons
... 50 Ni 25 Cu 25 ribbon is fully amorphous with a lower wavenumber Q p than the amorphous TieNi alloys owing to its high Cu ...Both crystallization activation energy E a and onset temperature T ... See full document
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