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[PDF] Top 20 Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

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Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

... Recently, nonvolatile memory devices 共NVM兲 are mov- ing toward high density cell array, low operation voltage, and good ...performance memory application, such as quantum effect under thin ... See full document

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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application

Formation of stacked Ni silicide nanocrystals for nonvolatile memory application

... Recently, the requirements of memory device are the high density cells, low power consumption, high-speed op- eration, and good ...All of the charges stored in a floating ... See full document

4

Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation

Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation

... provide the formation and memory effects of W nanocrystals nonvolatile memory in this ...study. The charge trapping layer of stacked a-Si and ... See full document

4

Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

... investigate the reliability of NiSi NCs embed- ded in oxide and nitride layers, the retention tests are shown in ...used the same programing 共+10 V for 5 s兲 and erasing 共−10 V ... See full document

4

Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

... in the SiO 2 film around metal nanocrystals. The induced deficiency in the surrounding SiO 2 results in stored charges leaking out of the nanocrystals through trap-assisted ... See full document

6

Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film

Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film

... charge-storage characteristics of samples A–C such as the memory window, retention, and ...endurance. The results are listed in Table I. The memory window of ... See full document

4

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

... shows the forward and reverse sweep capacitance-voltage 共C-V兲 characteristics, indicating the electron charging and discharging effects of CoSi 2 nanocrys- tals embedded in ... See full document

4

Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment

Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment

... Nonvolatile memory composed of a floating structure plays an important role in portable devices such as cell phones, notebook computers, and digital ...on the reduction in tunnel oxide ... See full document

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NiSiGe nanocrystals for nonvolatile memory devices

NiSiGe nanocrystals for nonvolatile memory devices

... Department of Physics, Institute of Electro-Optical Engineering, and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan 共Received 1 December ... See full document

4

Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application

Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application

... TEM of SiGeO layer after the RTO process at 900 °C for 60 s and the XPS analysis of charge trapping layer indicates that only GeO 2 peak existed in the Ge 2p spectra, as shown in ... See full document

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Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application

Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application

... 共use of PACO step兲, and 共3兲 Ge nanocrystal embedded in SiO x 共no use of PACO ...case, memory window for C-V measurement was influenced by PACO process, as shown in ...because ... See full document

4

Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment

Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment

... Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ...Department of Electronic Engineering, I Shou University, Kaohsiung 840, Taiwan, ...2012 The resistance switching ... See full document

6

Cerium oxide nanocrystals for nonvolatile memory applications

Cerium oxide nanocrystals for nonvolatile memory applications

... Tsai and Lurng-Shehng Lee Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Republic of China 共Received 25 July 2007; accepted 14 ... See full document

4

Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

... improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and ...investigate the role of the oxygen plasma ... See full document

4

Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

... Huang, and Tan-Fu Lei Abstract—We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory us- ing Ge nanocrystals ... See full document

3

Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications

Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications

... Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid ... See full document

5

Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

... Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and ... See full document

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Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure

Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure

... nanoscaled nonvolatile memory ...a memory-cell structure employing a semicon- ductor or metal nanocrystals as storage elements in metal- oxide-semiconductor 共MOS兲 field transistors has ... See full document

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Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process

Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process

... Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan 2 Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan Received November 30, ... See full document

5

Annealing effects on the crystallization and shape memory effect of Ti50Ni25Cu25 melt-spun ribbons

Annealing effects on the crystallization and shape memory effect of Ti50Ni25Cu25 melt-spun ribbons

... 50 Ni 25 Cu 25 ribbon is fully amorphous with a lower wavenumber Q p than the amorphous TieNi alloys owing to its high Cu ...Both crystallization activation energy E a and onset temperature T ... See full document

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