[PDF] Top 20 The dynamics of thermal annealing in arsenic-ion-implanted GaAs

... View the table of contents for this issue, or go to the journal homepage for more 1996 Jpn.[r] ... See full document

... Effect of thermal annealing on the stress and morphology of deposited nano films analyzed using molecular dynamics Zheng-Han Hong a , Shiang-Jiun Lin b , Te-Hua Fang a, ⁎ , ... See full document

... utilized the embedded atom method to study the materials deformation, dislocation movement and imprint forces in the nanoimprinting process of copper with a diamond ...mold. In ... See full document

... to the surface normal, the pho- toexcited electron–hole pairs can be separated under this field and generate the transient Hertzian dipoles that are oriented orthogonal to the optical ... See full document

... energy of 160 keV with a dose of 2 ⫻10 15 cm ⫺2 was performed at room temperature into 共001兲 n ⫹ -GaAs substrates with a carrier concentration of 1 ⫻10 18 cm ⫺3 grown by liquid encapsulated ... See full document

... Understanding the physics critical to the emission effi- ciency of terahertz antennas will allow greater control and wider applicability of terahertz ...used the current-surge model to ... See full document

... energy of GaAs : As samples due to the reduction of defects near the band ...change of the CWPR amplitude was observed at probe energy of ...shown in Section ... See full document

... for the emitter and receiver antenna was a mode- locked Ti:sapphire laser, which produced 80 fs light pulses at a wavelength of 780 nm and a repetition rate of 82 ...for the receiver an- ... See full document

... 491 Annealing Temperature Dependence of Electric Conduction and Capacitance Dispersion in Nitrogen-Implanted GaAs layer and the effective Schottky depletion ...width. The ... See full document

... density in the implantation layer. After appro- priate annealing, the highly resistive electrical and ultrafast optoelectronic properties of both GaAs: As + and LT-GaAs ... See full document

... Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1mm) and small- (5jim) aperture dipole antennas fabricated on arsenic-ion-implanted Ga[r] ... See full document

... study of gap-size-dependent phenom- ena on THz ...waveforms in an optical pump–probe ...with the increase of gap size of the anten- nas, we observe that both the bandwidth ... See full document

... grown GaAs 共LT- GaAs 兲 are also able to detect ultrabroadband THz radiation with the use of an appropriate optical ...reported the detectable spectral distribution was extended up to 60 ... See full document

... Over the past few years, much research has been focused on the doping of group III-nitrides because of their optoelec- tronic ...1,2 In particular, the isoelectronic doping ... See full document

... investigate the ramping and isothermal effect on Be-implanted p-type GaN, we measured the Raman spec- trum of the first set and second set as shown in ...From the Raman ... See full document

... changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence ...blueshift of the PL emission is observed for ... See full document

... where the first positive peak originates from the increase in the photoexcited carrier concentration whereas the negative peak is attributed to the decay of the ... See full document

... ultrafast carrier lifetimes as determined by structural, electrical, and optical characterization of the samples.. These devices were then characterized by an.[r] ... See full document

... investigate the cause of conductivity switching and the possible element responsible for such a conversion, we con- ducted dynamic SIMS measurement on the 600  C annealed ZnO ...layer. ... See full document

... 2 annealing process. In case of H 2 -treated sample, a little higher photocurrent can be observed and increases more rapidly than the non-treated sample with reverse-bias higher than 6 ...V. ... See full document