第五章 結論與建議
5.2 建議
由於半導體潔淨室內氣態污染物之污染來源相當廣泛、濃度頗低且組 成成分相當複雜，除了凝結性有機污染物外，環境中其他酸性、鹼性、有 機磷、硼等氣態污染物亦會同時對元件造成污染或缺陷，並隨著製程技術 的演進，晶圓表面污染之敏感度將更加顯著，因此未來仍需要更多 AMCs 相關議題之研究，來協助國內半導體產業解決 AMCs 問題以提升元件製程 良率。以下為本研究之建議:
1. 未來 AMCs 之相關研究應與國內半導體廠商進行合作研究，由於微量精 密分析儀器通常價格昂貴，藉由半導體廠商的經費支援，將使分析結果 更具可靠性，並可直接針對廠內發生AMCs 問題，深入研究探討，其成 果將更具有產業價值。
2. 在有機性氣體微量分析技術的研究開發上，應注意背景值干擾或污染吸 附質交錯污染，由於ATD-GC/MS 無法進行即時監測之功能，故未來仍 需發展一套可即時監測有機污染物之系統，同時偵測環境濃度或表面污 沈積量之即時變化，以探討其關聯性。另外就採樣吸附管方面，未來可 嘗試以固相微萃取吸附劑(solid phase micro-extraction, SPME)之技術來 進行有機性氣體微量分析探討。
3. 針對微環境晶圓曝露模擬實驗，未來可增加其他污染物種之曝露模擬，
或增加更多不同環境濃度範圍來模擬，同時在不同表面吸附探討上，亦 可增加非晶矽(amorphous Si)、單晶矽(mono-Si)、多晶矽(poly-Si)三種晶 圓表面，以比較三者間污染物吸附行為之差異。
4. 除單一污染物種之曝露模擬，另外可進行多項污染物吸附競爭模擬，並 考量在有流場下，其對有機污染物之吸附沈積變化。
5. 在批次無流場之晶圓曝露實驗中，由於環境中污染物之濃度值可能會因 吸附於艙體壁面上而造成部份濃度損失，因此未來可設計一連續供氣之 方式來進行晶圓曝露實驗。
6. 對於有機氣態分子污染物控制技術，未來應著重於材質釋氣成分調查，
並尋找適合之材質替代，以有效控制污染來源。而另一項技術重點即是 化學濾網或吸附劑之開發，此控制技術亦是目前最快且最為有效降低氣 態分子污染物之控制方法，因此如何透過濾網材質結構與吸附劑型態的 改良，來獲得一高效率化學濾網，將是未來可進行之研究重點。
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