[PDF] Top 20 Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing
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Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing
... reflection of the microwave power by the doped surface layer as the surface conductivity is increased by the anneal ...magnitudes of Rs for all the splits after the ... See full document
6
Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
... applications of MWA. First, activation and deactivation of P, As, and BF 2 implants by low-temperature (< 550 °C) MWA on implanted Si ... See full document
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Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors
... success of active-matrix liquid-crystal displays (AM-LCDs) has attracted much research into the performance im- provement of thin-film transistors (TFTs), which function as the pixel switches in ... See full document
3
Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si
... spite of the extensive efforts and considerable progress reported on formation of selective epi Si:C stressors, implementation of the method into a production CMOS process is limited ... See full document
6
Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass
... buried Si nanocrystal in glass, quartz, and thermal dioxide (SiO 2 ) layer on Si sub- strates, which have inspired enormous research on its struc- ture, electrical, and optical ... See full document
6
Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal
... effects of susceptor coupling on the dopant activation levels and uniformity of implant-doped Si for fixed- frequency microwave annealing have been ...number and ... See full document
3
Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
... IEEE, and Ching-Yi Wu Abstract—In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant- activation ...both ... See full document
3
Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
... effect of reducing the conductiv- ...those of the as-implanted sample except the current is ...inverse of the slope in the linear low-voltage region as the resistance ... See full document
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Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
... thickness of capping oxide of sample D is 76 nm. From the analysis of ion implantation simulation, we find that almost half amount of phosphorous ions pass through the oxide layer ... See full document
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Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
... The electrical properties (sheet resistance, carrier concentration, and mobility) which are monotonic functions of the annealing temperature show that dopant activati[r] ... See full document
6
Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
... keV implanted specimens due to the higher number of substrate defects and the worse crystallinity of the 75 keV implanted a-Si ...dopant activation and bet- ter ... See full document
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Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
... deposited by tetrakis- ethylmethylamino hafnium and O 3 via the atomic layer depo- sition process at 320 ...treated by postdeposition annealing. A 50-nm TiN or TaN layer was ... See full document
3
Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
... technologies, and available room-temperature deposition, transparent amorphous InGaZnO thin films have received considerable attention for their use in next-generation active-matrix liquid-crystal ... See full document
5
LOW-TEMPERATURE ACTIVATION AND RECRYSTALLIZATION OF B+-IMPLANTED AND BF2+-IMPLANTED LPCVD AMORPHOUS-SI FILMS
... The x-ray intensities of Si(! i 1 ) peak for the different anneal- ing times.. Moreover, these specimens with slower recrystallization rates will re- sult in higher x-ray inten[r] ... See full document
5
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
... atop Si wafer by low-temperature microwave annealing technique was investigated in this ...the temperature of phosphorus activation could be 120 ◦ C to 140 ◦ ... See full document
3
Formation of Si nanoclusters in amorphous silicon thin films by excimer laser annealing
... The heat generated by the KrF excimer laser melts the surface of the a-Si film, the melted a-Si film becomes globular in shape due to the surface tension, and Si nanoparticles are[r] ... See full document
2
Synthesis of multiwalled carbon nanotubes by high-temperature vacuum annealing of amorphous carbon
... new and potentially useful method for growing carbon nanotubes with high inner diameter and which are filled with metal nanoparticles and nanowires, by annealing amorphous carbon ... See full document
5
Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si, (111) heterojunction grown by atomic layer deposition
... position of NBE proved the Burstein– Moss ...act as a shallow donor state in the thin film in agreement with the theoretical work by Van de ...intensity of PL spectra also varied with the ... See full document
4
INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING
... On additive white Gaussian noise channels these digital FM schemes achieve higher minimum Euclidean distances and memory lengths than conventional CPFSK signals. Introducti[r] ... See full document
3
Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
... Institute of Science and Tech- nology, Lungtan, working on missile ...Process and Design Center, Texas Instruments, he moved on to Silicon Valley and had since worked with several companies, ... See full document
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