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[PDF] Top 20 Atomic and electronic structures of thin NaCl films grown on a Ge(001) surface

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Atomic and electronic structures of thin NaCl films grown on a Ge(001) surface

Atomic and electronic structures of thin NaCl films grown on a Ge(001) surface

... depend on the use of exchange-correlation functions as the layer adsorption energies which are shown in ...H NaCl P 3 ML Because of weak coupling between the substrate and the ... See full document

6

Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films

Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films

... ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic ...the atomic structure of ferroelectric surface, however, is ... See full document

6

Oxidation characteristics of nanodot and nanobump on TiN thin films by atomic force microscopy

Oxidation characteristics of nanodot and nanobump on TiN thin films by atomic force microscopy

... oxidation on TiN thin films produced TiO x N y oxide structures ...still a lack of information concerning the surface’s anodic kinetics, growth mechanisms, and the ... See full document

2

A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition

A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition

... influence of dopants on the dislocation structure and its further influence on the IR response of GaN films are studied by cross-section and high resolution TEM, AFM ... See full document

6

Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substrates

Characteristics of atomic-layer-deposited Al(2)O(3) high-k dielectric films grown on Ge substrates

... for a HF-last Si ...behavior of Ge gradually diminishes as either the acid concentration decreases or the exposure time in air increases, and it disappears after rinsing in DI water ...共i兲 ... See full document

6

Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

... Abstract A new type of large area metal organic chemical vapor deposition (MOCVD) system for the growth of high quality and large size ZnO materials is ...properties of the un-doped, n- ... See full document

6

Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition

Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition

... Research and development on GaN-based materials and structures have been greatly enhanced in recent years and remarkable breakthroughs have been achieved in their growth and ... See full document

5

Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition

Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition

... high-k films were on the 15–25 Ω · cm p-type Si ...in a chemical oxide layer between high-k dielectrics and the Si substrate to enhance initial growth of the high-k ...2 and ... See full document

8

Optical second harmonic generation from the twin boundary of ZnO thin films grown on silicon

Optical second harmonic generation from the twin boundary of ZnO thin films grown on silicon

... epitaxially grown on silicon 共111兲 substrate by matching the four silicon 共220兲 planes with the five 共112¯0兲 planes of ...spacing of ZnO 共112¯0兲 planes ...be a discontinuity of ... See full document

4

Nano-structure study of ZnO thin films on sapphire grown with different temperature conditions

Nano-structure study of ZnO thin films on sapphire grown with different temperature conditions

... Void-like structures could be generated during the low- temperature growth. Such a void-like structure near the interface may become the seed of the domain gap between two evolving domains when the ... See full document

7

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

... epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor ...crystallinity and smooth surface were observed for these films by x-ray diffraction, ... See full document

4

Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature

Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature

... tion of carriers has to be reduced to a very low level, both in the bulk and at the ...those grown by the float-zone 共FZ兲 or mag- netically confined Czochralski 共MCZ兲 ...the surface can ... See full document

4

Influences of Substitution on Electronic Structures of Oligofluorenes

Influences of Substitution on Electronic Structures of Oligofluorenes

... The electronic structures, including the DOS and the energy levels of highest occupied molecular orbitals 共HOMOs兲, were studied both by ultraviolet photoemission spectroscopy 共UPS兲 of ... See full document

3

Electronic structures and surface states of ZnO finite well structures

Electronic structures and surface states of ZnO finite well structures

... zone. A larger localization length at the  point results in a larger overlap between the degenerate surface states, which explains the largest splitting of the bands at the  ...edges ... See full document

7

Structure and properties of GZO thin films grown on ZnO buffer layers

Structure and properties of GZO thin films grown on ZnO buffer layers

... analysis a b s t r a c t Thin gallium-doped zinc oxide (in GZO the Ga 2 O 3 contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) ... See full document

11

Local geometric and electronic structures of gasochromic VOx films

Local geometric and electronic structures of gasochromic VOx films

... x and AA200, suggesting that VO x and AA200 are highly promising for gasochromic ...intercalation of hydrogen is caused by a change in the valence of the ...intercalation of ... See full document

10

Comparison of the electronic structures of AIN nanotips grown on p- and n-type Si substrates

Comparison of the electronic structures of AIN nanotips grown on p- and n-type Si substrates

... Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- ... See full document

9

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

... after surface nitri- dation implies that Ge is easier to be oxidized than ...effect of surface nitridation on the following deposited HfO 2 , XPS spectra of Ge 2 p3 ... See full document

4

Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

... properties of a nanometric area in electronic ...conductive atomic force microscopy 共C-AFM兲 and scanning capacitance microscopy 共SCM兲 are two well-known techniques for the ... See full document

4

Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition

Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition

... type of stacking faults, I 1 or I 2 ...epi-layers grown by PLD 12 and p-MBE 26 on c-sapphire where edge-type threading dislocations are the dominant structural defects in the film bulk, basal ... See full document

6

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