[PDF] Top 20 Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
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Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
... fronts of crystallization from opposite sides confront with each other at the central region of the ...amount of Ni species may be left inside the channel and leads to the degraded on-state ... See full document
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Characterizations of Metal Induced Lateral Crystallization Poly-Silicon 張志宇、黃俊達
... Recently, polycrystalline silicon（poly-Si）has received increasing attention because of its wide range application, such as Thin Film Transistor（TFT）for liquid crystal display, solar ... See full document
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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
... advantages of using polycrystalline-Si 共poly-Si兲 thin-film transistors 共TFTs兲 in an active matrix liq- uid crystal display are the greatly improved carrier mobility 共larger than 10 cm 2 ... See full document
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Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
... Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film ... See full document
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High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
... deal of pioneering contributions to low-permittivity (low-k) dielectrics, copper inter- connects, and thin-film-transistor ...characteristics of low-k ...directly by using electron-beam ... See full document
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High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
... Abstract—Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are ...sidewalls of ... See full document
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Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
... position-manipulated silicon grains are essential to high-performance and good uniformity ...Institute of Physics. 关DOI: 10.1063/1.2801525兴 Low-temperature polycrystalline silicon ... See full document
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High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
... characteristics of the GBLC, conv-ELC, and SPC NW TFTs. The dependences of (c) μ FE and (d) V th on laser energy densities for the GBLC, conv-ELC, and SPC NW ...super lateral grain growth starting ... See full document
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High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization
... low-temperature polycrystalline- silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization ...amorphous silicon ... See full document
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Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
... Department of Photonics and Display Institute, National Chiao Tung University, Taiwan d National Nano Device Laboratory, Taiwan This work studied the effects of channel width and NH 3 plasma passivation on ... See full document
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Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
... Department of Materials Science and Engineering, Ming Dao University, Peetow, Changhua 52345, Taiwan, ...Ni-metal-induced crystallization (MIC) of amorphous Si ( -Si) has been employed ... See full document
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Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors
... channel film crystallization and post-implant activation. Silicon wafers coated with a 500 nm thermal oxide were used as the starting ...deposited by low- pressure chemical vapor deposition at ... See full document
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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
... sequential lateral solidification, 8 the grain filter method, 9 additional reflective or antireflective capping layer, 10 phase-modulated ELC, 11 dual-beam exci- mer laser annealing, 12 double-pulsed laser ... See full document
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Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILC
... that metal-induced lateral crystalliza- tion (MILC) thin-film transistors (TFTs) exhibit higher on- state current, steeper subthreshold slope, and lower minimum leakage than ... See full document
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Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer
... Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer Ko-Hui Lee 1 , Hsing-Hui Hsu 1 , Horng-Chih Lin 1;2 , and Tiao-Yuan ... See full document
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Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
... sistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical[r] ... See full document
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Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress
... the enhanced degradation in the polysilicon thin-film transistors under dynamic hot-carrier ...decrease of maximum transconductance ( m max ) in static stress, m max in dynamic stress ... See full document
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Reliability of passivated P-type polycrystalline silicon thin film transistors
... It can be seen that after plasma treatment, the turn on current, subthreshold swing, threshold voltage and leakage current (V~,>0 for p-type TFTs) are significantl[r] ... See full document
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CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
... In contrast to conventional TFTs with pure thermal oxides as gates, TFTs with 0/N gate structures can attain a higher ON/OFF current ratio and carrier mobility by reducing the equivalent[r] ... See full document
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Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
... In spite of the increase of the threshold voltage, the great increase of acceptor-like trap density after stress enhances the kink effect and then dominates the [r] ... See full document
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