[PDF] Top 20 Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

... The effects of growth temperature and Cr doping on the electrical, optical and magnetic properties are also ...and Cr-doped IGZO films used in this work were grown ... See full document

... Mo-doped In–Ga–Zn–O films used in this study were prepared by using magnetron co-sputtering ...applied on a InGaZnO 4 target and a various dc power ranging between 2 and 5 W ... See full document

... Conclusion In conclusion, highly c-axis-oriented Al-doped ZnO thin films have been prepared by the well-established sol–gel technique under suitable thermal ...optical properties were investigated to explore ... See full document

... combination of XRD, AFM and nanoindentation techniques has been carried out to investigate the structural, surface morphological features, and nanomechanical properties of GZO films subjected to RTA ... See full document

... SPC. In the NILC method, a thin Ni metal layer was deposited on the surface of the a-Si film and followed by crystallization at a tempera- ture lower than 600°C in a nitrogen ambient atmos- ... See full document

... thin films have been fabricated by spray pyrolysis on a glass ...electrical properties of the thin films were ...concentration of the BZO thin ...concentration of 1:0  10 ... See full document

... report on the chemical and physical properties of the fluorinated amorphous carbon film prepared by ECR-CVD, at two CF 4 flow ratios R ...gap of the a-C:F films. With the ... See full document

... window in an amorphous silicon solar cell. In photovoltaic and other possible optoelec- tronic applications, the development of thin coatings with a high transmittance and a low sheet ... See full document

... SUMMARY In this report, various organic Alq3 amorphous layers are prepared by vacuum deposition at different T sub from 30 ~ ...Then, effects of T sub on the surface morphology, ... See full document

... investigated in the present study were deposited on Corning 1737F glass substrates at room temperature using rf-sputtering from a ZnO target with a nominal Ga-doping of 3 ...at.%. ... See full document

... any doping because ZnO is a natural n-type semiconductor, while it has been recognized that p-type ZnO is very difficult to develop although high densities of holes could be achieved with nitrogen as the ... See full document

... x films with x ⫽0 – 14 at. % are fabricated on glass and naturally oxidized silicon wafer substrates by dc magnetron ...The effects of Pt content on the magnetic properties and ... See full document

... control of film stoichiometry, diversity of material selection, and high deposition ...performed in terms of device ...targets of In 2 O 3 , Ga 2 O 3 , and ... See full document

... fabricated on a glass substrate for this research. A 100-nm-thick gate electrode of the MoW layer was initially formed by dc ...layer of 200-nm-thick silicon dioxide (SiO 2 ) film was subsequently ... See full document

... ) of oxide TFT. Whereas the desorption of oxygen atoms in the back channel will result in the left shift of V th ...channel of a-IGZO layer from contacting with ambient air, but ... See full document

... observed in pulsed-laser deposited amorphous In–Ga– Zn–O (a-IGZO) films undoped with impurities containing unpaired d or f ...presence of oxygen vacan- cies ... See full document

... Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan b Department of Physics, National Taiwan University, Taipei, Taiwan Abstract The Zn doped Fe 3 O 4 ... See full document

... number of techniques are used to manipulate the film orientation during wet chemical depositions such as the MOD and sol-gel methods, for example, utilizing the appropriate substrates with either a matching ... See full document

... These properties open up to new applications such as transparent electronics, flexible electronics, and photo ...stability in the dark state, the significant electrical instability is observed when they are ... See full document

... characteristics of the SIS devices measured in dark environment at room temperature are shown in ...bias on a-IZO) of about ...diagram of the SIS device in Fig. 6. ... See full document