[PDF] Top 20 Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
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Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
... ']'he effects of as-depo;ited (intrinsic) stress, externally applied (extrinsic) stresses, hardness, and modules of various dielectric films on chemica]-machanical polishing (CMP) re[r] ... See full document
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CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
... Removal rate of thermal oxide The role of the slurry particles is to add a chemical "tooth" to the polishing process, 2 a n d the bond strength between the s[r] ... See full document
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Effects of film stress on the chemical mechanical polishing process
... general effects of film stress upon removal rate and WIWNU are ...In the current study, we consider only the defection due to the existence of intrinsic and thermal film ... See full document
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Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
... comparison of this cleaning method with the conven- tional scrubber clean, which is the main choice in most post- CMP applications [12], was also ...performed. The results are shown in Table ... See full document
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Chemical mechanical polishing of PSG and BPSG dielectric films: The effect of phosphorus and boron concentration
... (in Fig. 3), boron seems to be the more important dopant which affects the polishing rate for BPSG films, hence, an increase of boron concentration leads to highe[r] ... See full document
5
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
... Department of Submicron Technology Development, ERSO/ITRI, Hsinchu, Taiwan Abstract Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive ... See full document
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Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
... The results show that under fixed chemistry and mechanical parameters, the CMP removal rate increases significantly with increasing fluorine content in the oxides due to the lower hardne[r] ... See full document
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Localized corrosion effects and modifications of acidic and alkaline slurries on copper chemical mechanical polishing
... results of NH 4 OH slurries, listed in Table 2, indicate that all of the removal rates and corrosion rates in NH 4 OH slurries are lower than those in HNO 3 slurries owing to the formation ... See full document
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Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
... Consequently, the etchback process has been extensively performed to avoid the problem of ...during the manufacture of multilevel interconnects. The chemical ... See full document
5
Mechanical properties of InGaN thin films deposited by metal-organic chemical vapor deposition
... study characteristics of InGaN thin films developed by metal-organic chemical vapor deposition (MOCVD) at various growth ...temperatures. The effect of deposition ... See full document
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High-selectivity damascene chemical mechanical polishing
... Ideally, the Cu-CMP process should remove the excess Cu from barrier surfaces without losing Cu metals in ...rate of Cu is required for the phase 1 Cu-CMP to efficiently eliminate the ... See full document
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Novel polymeric surfactants for improving chemical mechanical polishing performance of silicon oxide
... 2001 The Electrochemical ...2001. Chemical mechanical polish 共CMP兲 has become the standard ul- tralarge scale integrated circuit 共ULSI兲 manufacturing process for ...Despite the ... See full document
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The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
... concentration effects on Al/Ti removal selectivity To ensure that there is no residual Al and adhesion/barrier metal Ti between the trenches in the damascene structure, the ... See full document
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Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
... present the development of a novel acidic zirconia-based slurry for various SOG-CMP pro- ...improve the slurry wettability and hence contact area on SOG surfaces. The interactions ... See full document
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Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates
... fabrication of flexible a-IGZO TFTs on transparent and flexible PI-based nanocomposite substrates using fully lithographic, etching, and plasma- enhanced chemical vapor deposition (PECVD) processes ... See full document
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Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films
... ZnO thin films can be deposited with a wide variety of meth- ods, such as radio frequency magnetron sputtering [13], chemical vapor deposition (CVD) [14], molecular beam epitaxy (MBE) [15] and pulsed ... See full document
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Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing
... is the permittivity of free space 共8.85 ⫻10 −12 F /m兲, is the dielectric constant of the Cu-oxide film ...is the surface area of Cu films 共4 cm 2 兲, and d ... See full document
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Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
... For the plasma-ann samples, the BST structure is amorphous and it is easily attacked by plasma so the plasma damage for the plasma-ann samples is more obvious than that for the ... See full document
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Robust operation of copper chemical mechanical polishing
... work, the potential problem, non-monotonic oxidizer concentration effect, in Cu CMP is pointed out and verified ...operation. The first model adds the concentration effect into the well-known ... See full document
15
Post cleaning of chemical mechanical polishing process
... (ii) As the wafer is transported to a tank with an alkali solution, the fresh surface gradually disappears and a negative charge (negative zeta potential) is built up [r] ... See full document
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