[PDF] Top 20 Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
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Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
... al.: ENHANCING THE OUTPUT POWER OF GaN-BASED LEDs GROWN ON WET-ETCHED PSSs 1153 ...images of a PSS of etching time ... See full document
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Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates
... comparing the ray-tracing calculation and real device mea- surement, enhancement of LEDs with etching time of 120 s was degraded probably due to the nonoptimized metallorganic chemical ... See full document
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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
... Abstract: The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate ... See full document
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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate
... both the GaN/sapphire and GaN/air void interfaces were ...lots of the downward photons still suffer from to- tal ...at the interface. When the incident angle is ... See full document
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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
... discussion Based on the experimental results of Raman and excita- tion current-dependent EL measurement, it can be de- termined that the growths of the InGaN-based ... See full document
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High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology
... fabricate patterned sapphire sub- strates (PSSs) of convex-shape with features of various ...duplicate the pattern of a hard silicon template. The imprinted material was ... See full document
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Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
... Keywords: GaN; InGaN; Patterned sapphire substrate (PSS) ...Introduction GaN-based wide band-gap semiconductors have attracted considerable interest, in terms of applications for ... See full document
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Improved Output Power of Nitride-Based Light-Emitting Diodes With Convex-Patterned Sapphire Substrates
... LED, the high output power is as important as the good I –V ...is the main purpose of the LEDs using patterned ...shows the light output powers ... See full document
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Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces
... investigate the mechanism responding for perfor- mance enhancement of gallium nitride (GaN)-based light-emitting diode (LED) grown on chemical wet-etching-patterned ... See full document
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Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template
... into the air for CPSS-LED and SiO -LED than C-LEDs. More- over, the SiO -LED show better light extraction efficiency than ...to the refractive index of SiO and sapphire are ... See full document
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Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2 Nanopatterned Sapphire Substrates
... microscale patterned substrates with grooves, pyramids or other patterns are usually fabricated by dry or wet etching ...As the growth time increased, GaN epilayers on the ... See full document
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Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
... become the most widely used optoelectronic devices for solid-state ...range of emitting wavelengths from ultra- violet (UV) to near infrared (NIR) and a high electric-optical conversion ...efficiency. ... See full document
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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
... characteristics of the three fabricated ...understanding of the output power improvement, a Monte Carlo ray-tracing simulation was used to calculate the LEE of ... See full document
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460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
... plots the light–output power as a function of the injec- tion current for nonencapsulated 460-nm LEDs grown on CSS and PSS, where the output ... See full document
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Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
... demonstrated the high perfor- mance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate ...HAR-NPSS. The micro-scale patterned ... See full document
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Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates
... to the TDD within the devices. For InGaN blue LEDs, dislocation is considered to be a source of nonradiative recombination ...When the injection current increases, the junction ... See full document
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Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD
... back the lamination efficiency improvement. In the past, patterned sapphire sustrate (PSS) has been proven to be effect to enhance the LED’s ...increase the output ... See full document
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Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate
... observation the tendency of emission peak energy and car- rier lifetime variation in MQWs with different excitation power for both LED samples, we conclude the internal quantum effi- ciency ... See full document
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The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate
... respectively. On the other hand, the surfaces of B 1 , B 2 , D 1 and D 2 -facets were not smooth, with some ambiguous stripes, which were investigated by using “zigzag triangle” hard ...and ... See full document
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Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
... 2011 GaN/sapphire-based optoelectronic devices mainly originates from defect-related states that produce trap-assisted tunneling and/or ...principle, the PV-B samples with a slightly lower ... See full document
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