[PDF] Top 20 Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide

... IEEE, and Tien-Chang Lu Abstract—The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern ... See full document

... Abstract—InGaN-based microhole array light-emitting diodes (LEDs) with hole diameters ( ) of 3–15 m were fabricated using self-aligned ...effects of size on the ... See full document

... Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien, Taiwan 97401, ...pattern and enhance the light extraction of GaN-based ... See full document

... flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and ... See full document

... versions of one or more of the figures in this letter are available online at ...injection efficiency is assumed to be 100%. Due to the large lattice mismatch and thermal expansion coefficient ... See full document

... simulated light propagation and reflection using the ray tracing method provided by Advanced System Analysis Pro- gram ...on GaN-based LED structures. The top mesa area is 300 ␮m × 300 ... See full document

... as light-emitting diodes (LEDs) and laser ...brightness GaN-based LEDs have become a strong candidate for applications such as displays, traffic signals, backlight for cell ... See full document

... characteristics of GaN-based VI-LEDs with and without an ITO nanorod array were measured at room temperature, as shown in ...3.39 and 3.47 V for VI-LEDs with and without ... See full document

... the light extraction improvements are mainly focused on the top of LED chips, whereas by reducing the light escape from the substrate could also help a LED to improve its light ... See full document

... Chen, and Chun-Yen Chang Abstract—The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were ... See full document

... quantum efficiency 1. Introduction Nitride-based compound semiconductors have been de- veloped for use in high-performance optical devices such as light-emitting diodes (LEDs), laser ... See full document

... wall-plug efficiency in the InGaN/GaN LED with a micro-roughened top surface using the metal clusters as a wet etching mask ...rough surface. As a result, the light ... See full document

... angle of 30 . The integrated intensity is improved by a factor of 38% within a view angle of 20 ...4(b) and (c) show the snap shots of wave propagating across a GaN–air ... See full document

... cated by a chemical wet etching ...facet of {1–102} -plane with an inclined slope of 57 , facilitating a significant enhancement of the light extraction ...results ... See full document

... growth of the n þ -SPS ...ciency of LEDs depends on the refractive index and mor- phology of the top surface ...The light extraction efficiency of ... See full document

... fabricated by wet ...power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 ...power of the modified-PSS LED is ... See full document

... on GaN templates without SiO 2 NRAs and with SiO 2 nanorods of 100, 200, and 300 nm heights were represented by LED I, LED II, LED III, and LED IV, ...confirmed by CL ... See full document

... current of 20 mA injected into the TO mounted device at room ...modified by the PhC lattice diffrac- tion. The waveguided light traveling in the plane will be diffracted by the reciprocal wave ... See full document

... Lu, and Shing-Chung Wang, Life Member, IEEE Abstract—In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened ... See full document

... range of injection currents we applied, consistent with the previous discussion that the synthesized ZnO NRs creates better index matching for photon escaping in a manner correlated with a reduc- tion of ... See full document