[PDF] Top 20 Fabrication and characterization of spherical polycrystalline diamond emitter arrays
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Fabrication and characterization of spherical polycrystalline diamond emitter arrays
... density of spherical polycrystalline diamond field emitter arrays (SPD-FEAs) were fabricated, using microwave plasma chemical vapor deposition (MPCVD) ...current of the ... See full document
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Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays
... Results and discussion Fig. 1 presents a SEM photograph of the non-doped diamond emitter, while Table 1 list the deposition ...Non-doped diamond emitters have several branches on their ... See full document
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Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m
... After the 3000 A-thick-oxide was grown and following the 2500 A-thick-Cr metal deposition, an uniform gated field emitter array(GFEA) with the gate aperture of 0.33 im has been achieved,[r] ... See full document
5
Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays
... Results and discussions Figure 2a shows a typical SEM image of a PS nanosphere self-assembled monolayer on the substrate, indicating that a defectless region can be ...defects and stacking faults are ... See full document
6
Fabrication and Characterization of Anodic Titanium Oxide Nanotube Arrays of Controlled Length for Highly Efficient Dye-Sensitized Solar Cells
... NT arrays on Ti foil as working electrodes have many important intrinsic features that outperform conventional ...efficiency of charge collection of NT films has been proved to be much better than ... See full document
7
Characterization and fabrication of wireless flexible physiological monitor sensor
... design and fabrication process of a wireless flexible physiological monitor module, which is based on a polyimide substrate for a printed circuit and uses on a non-woven material to package ... See full document
4
Fabrication and characterization of PZT thick films for sensing and actuation
... thicknesses of between 1 and 10 µm were successfully fabricated by the modified sol-gel method using two techniques - precursor concentration modulation and rapid thermal ...thickness of each ... See full document
15
Fabrication and characterization of micro-structured polymer optical fibers
... Abstract: Single-mode micro-stmctured polymer optical fibers over the wavelength range of 633 through 1550 nm are fabricated and characterized. The effects of drawing temperature and[r] ... See full document
2
Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators
... process and the post-CMOS process. The micro generator is composed of 24 thermocouples in ...p-type and n-type polysilicon strips. The output power of the generator depends on the temperature ... See full document
11
Design, fabrication, and characterization of microstructured polymer optical fibers
... Recently, polymer-based PCFs, which are generally called microstructured optical polymer fibers (MPOFs), have been fabricated and studied.. Compared to silica-based PCFs, MP[r] ... See full document
1
Fabrication and characterization of Schottky junctions of aluminum with polyaniline containing hydrolysis products
... presence of hydrolysis products of PANI, benzoquinone 共BQ兲/hydroquinone 共HQ兲 for PANI film deposited with a switch potential of ...properties of the Al/PANI 共with inbuilt hydrolysis products兲 ... See full document
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fabrication and characterization of transparent superhydrophilic/ superhydrophobic silica nanoparticulate thin films
... nanoparticles and polyelectrolytes. The effects of volume ratio of differently sized silica nanoparticle solutions for the body layer deposition on transmittance in visible light region and ... See full document
3
Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
... Ministry of Science and Technology, Taiwan, under Grant NSC ...virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates ... See full document
7
Low-Temperature Fabrication and characterization of Ge-on-Insulator structures
... photoresponse of GOI MIS diode under light exposure at a wavelength of 850 nm with differ- ent bonding ...edge of the gate electrode and photogenerated carriers can be col- lected by lateral ... See full document
3
Fabrication and characterization of Cu-SiCp composites for electrical discharge machining applications
... Department of Materials Science and Engineering, National Chiao- Tung University 1001, Ta Hsueh Road, Hsinchu 30050, Taiwan ABSTRACT Cu–SiC p composites made by the powder metallurgy method were investi- ... See full document
22
Fabrication and characterization of field-effect transistors with suspended-nanowire channels
... swing of the ...31) and the cause is attributed to the larger strain resulting from the larger displacement of the channels during ...number of surface defects are generated in a limited ... See full document
8
Fabrication and Characterization of Benzocyclobutene Optical Waveguides by UV Pulsed-Laser Illumination
... proposed and comprehensively characterized. The fabrication method can not only simplify the fabrication process as re- quiring no further lithography and dry etching process, but also form ... See full document
8
Fabrication and characterization of chondroitin sulfate-modified chitosan membranes for biomedical applications
... steps of freeze-gelation are the freeze of a polymer solution, followed by the gelation of the polymer under the freezing condition to preserve the porous ...ratios of CH to CS. The pore ... See full document
9
Fabrication and Characterization of GaN MESFETs 黃佳鴻、蕭宏彬
... application of light emitting devices, such as blue and green light emitter diodes ...the fabrication of the high power electronic devices, such as FETs and ...the ... See full document
2
Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs
... one of the most important roles, which re- sult in the temperature-insensitive light-current characteristics for device ...increase of the number of quantum wells can decrease the percentage ... See full document
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