[PDF] Top 20 Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
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Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
... near ohmic characteristic is obtained as the annealing tem- perature rises to 450–550 ...linear ohmic behavior with low resistance ...Total resistance against the pad distance ... See full document
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Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
... of ohmic contact to GaN, different metals were applied in both n and p ...n-type GaN, low resistance ohmic contacts around 10 ⫺5 – 10 ⫺8 ⍀ cm 2 range have ... See full document
4
The effect of heat treatment on Ni/Au ohmic contacts to p-type GaN
... treated Ni/Au films on p-type GaN was examined with transmission electron microscope (TEM) in conjunction with compositional ...that Au islands and crystalline NiO ... See full document
6
Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
... quality GaN crystalline film has resulted in rapid progress in the development of high brightness blue LEDs 1 and continuous wave LDs at room ...need low resistance ohmic con- tacts to both n- ... See full document
8
Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance
... of ohmic contacts on AlGaN/GaN HEMTs. Using a Au-free metal scheme, Ti/Al/Cr/Mo/Au metal scheme, or metal schemes with a thicker Ni layer, research- ers have ... See full document
7
Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN
... Mg-doped GaN films used in this study were grown on c-plane sapphire substrates using metallorganic chemical vapor deposition ...as-grown GaN samples were ultrasonically degreased using ... See full document
4
Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments
... good Ohmic contacts with low contact resistance are very ...general, Ohmic contacts to n-GaN with low contact resistance are not easily obtainable because of ... See full document
5
Effect of Cl-2/Ar dry etching on p-GaN with Ni/Au metallization characterization
... improved Ohmic characteristics were observed after dry ...the Ni/ Au Ohmic contacts 共Schottky barrier height兲 on p-GaN was investigated by considering dry etching ... See full document
3
Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures
... Al/ Ni/ Au alloyed Ohmic contacts by inserting a thin Si 共30 Å兲 between the four-layer metallization and the semi- conductor, without the need of extra process steps such as regrowth, ... See full document
5
Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT
... the Au layer in a conventional ohmic contact of Ti/Al/Ni/Au for AlGaN/GaN structure with Cu has been ...of Ni layer was varied to examine its influence on the Cu-based ... See full document
8
Investigation of Ohmic mechanism for chlorine-treated p-type GaN using x-ray photoelectron spectroscopy
... wide-band-gap GaN-based compound semi- conductors have been widely and successfully used in elec- tronic devices, 1 optoelectronic devices, 2 and near white emission light ...sufficiently low Ohmic ... See full document
4
Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs
... copper metallization for GaAs devices. 8–10 The AuGeNi alloyed ohmic contact was commonly used as the ohmic contact to n-GaAs in the ...of using novel Pd/Ge-based copper ohmic ... See full document
4
Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN
... substrate using the LLO process. This means the n-type electrode contacts in the vertical GaN LEDs are formed on the N-face GaN ...Metal contacts on Ga-face ... See full document
3
Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
... into GaN at elevated temperatures can be detrimental to the GaN ...the ohmic contact. A few ohmic contact structures for GaN devices, such as Si/Ti/Al/Cu/Au, 14 Ge/Cu/Ge, 15 and ... See full document
5
W ohmic contact for highly doped n-type GaN films
... Abstract Ohmic contacts with low resistance and low barrier height were fabricated on n-type GaN ®lms using W ...n-type GaN ®lms were grown by ... See full document
4
Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
... contact resistance must be reduced and the trans- mission efficiency of the p-contact metal layer increased to achieve high-performance nitride-based ...taining Ohmic contacts on ... See full document
4
High-transparency Ni/Au ohmic contact to p-type GaN
... Mg-doped GaN was grown on a c-face sapphire substrate by metalorganic vapor phase epitaxy ...high-temperature GaN epitaxial layer, a low-temperature nucleation layer nominally 30 nm thick was ... See full document
3
Effects of oxidized Cu and Co layers on the formation of Au ohmic contacts to p-GaN
... devices, low-resistance ohmic contacts are es- sential. For p-GaN it is difficult to form the ohmic contacts with a low contact resistance because of ... See full document
5
Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN
... INTRODUCTION GaN is a semiconductor that has been extensively in- vestigated for optoelectronic applications, 1,2 such as light emitting diodes (LEDs) and laser diodes (LDs), because of its wide-spectrum and ... See full document
8
AuBe Ohmic contacts to p-type ZnTe
... annealing temperature is > 300”C, the specific contact resistance increases dramatically and some kinks in the I-V characteristic around 0.3V can also be observed.. Th[r] ... See full document
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