[PDF] Top 20 Reliability of passivated P-type polycrystalline silicon thin film transistors
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Reliability of passivated P-type polycrystalline silicon thin film transistors
... It can be seen that after plasma treatment, the turn on current, subthreshold swing, threshold voltage and leakage current (V~,>0 for p-type TFTs) are significantl[r] ... See full document
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Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
... In spite of the increase of the threshold voltage, the great increase of acceptor-like trap density after stress enhances the kink effect and then dominates the [r] ... See full document
5
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
... Polycrystalline silicon thin-film transistors 共poly-Si TFTs 兲 are attractive for many applications, such as the switching devices as well as peripheral driving circuits in the active ... See full document
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A reliability model for low-temperature polycrystalline silicon thin-film transistors
... ) of the devices stressed at 100 ◦ C and 25 ◦ C, ...GS of −20 V and variable values of V DS ...increase of the |V DS ...suppression of the NBTI is soon taken over by the influence ... See full document
3
Study on electrical degradation of p-type low-temperature polycrystalline silicon thin film transistors with C-V measurement analysis
... Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu, 300 Taiwan Available online 11 September 2006 Abstract Laser recrystallized low-temperature poly-silicon (LTPS) films ... See full document
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Plasma-induced damage on the performance and reliability of low-temperature polycrystalline silicon thin-film transistors
... 2006. Polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 are key devices in flat-panel displays 共FPDs兲, such as active-matrix liq- uid crystal displays ...mobility of ... See full document
6
Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... Excimer-laser-annealed polycrystalline silicon thin film transistors 共poly-Si TFTs兲 have been extensively investigated due to their potential for integration into peripheral driver ... See full document
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Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
... Si thin- film transistors 共TFTs兲, but polycrystalline silicon 共poly-Si兲 TFTs have attracted a great attention in recent years due to much higher carrier ...talline silicon 共LTPS兲 ... See full document
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Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-kappa Eu2O3 gate dielectrics
... and reliability characteristics of polycrystalline silicon thin-film transistors with high- Eu2O3 gate dielectrics Li-Chen Yen, Chia-Wei Hu, Tsung-Yu Chiang, Tien-Sheng ... See full document
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Electrical enhancement of polycrystalline silicon thin-film transistors using fluorinated silicate glass passivation layer
... degradation of device reliability caused by the absorption of moisture from the atmosphere after device fabrication can be ...characteristics of the fabricated ...number of OH bonds may ... See full document
7
Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors
... realization of system on panel 共SOP兲, low-temperature polycrystalline silicon complementary thin- film transistors 共LTPS CTFTs兲 have attracted much research interest ... See full document
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Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation
... and reliability are significantly improved by nitrogen implanta- tion technique into the poly-Si TFT with Pr 2 O 3 gate dielectric without additional plasma ... See full document
5
Effective density-of-states distribution of polycrystalline silicon thin-film transistors under hot-carrier degradation
... INTRODUCTION Polycrystalline silicon 共poly-Si兲 thin-film transistors 共TFTs兲 have been extensively used in many applications, es- pecially for active-matrix liquid-crystal displays ... See full document
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Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect
... temperature polycrystalline silicon thin film transistors 共LTPS TFTs兲 have been widely investigated for flat-panel applica- tions, such as for active matrix liquid crystal displays ... See full document
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Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors
... plasma- passivated devices, an effective poly-Si TFT model has been ...composited of a flat plate and corner edge ...kind of transistor kink effect has been reported in shallow trench isolation ... See full document
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Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors
... and reliability of laser-activated polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 under the stress condition of drain voltage (V d ) ⫽12 V and gate ... See full document
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Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors
... ∆N ox and ∆V th . We can conclude that ∆N bulk alone cannot explain the measured ∆V th and that ∆N ox must be taken into account. By expanding the model proposed for bulk-Si MOSFETs [17], we introduce a model to explain ... See full document
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Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
... Thin film transistors (TFTs) are widely used as pixel switch in the active-matrix liquid crystal display ...uniformity of TFTs are well known to strongly affect the properties of ... See full document
5
Plasma damage-enhanced negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors
... NBTI reliability in LTPS ...consequence of plasma damage will be represented under NBTI stress in LTPS ...up of generations in interfacial states, grain boundary trap states, and fixed oxide ...high ... See full document
3
High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure
... Additionally, hot-carrier stress analysis was applied to investigate the device reliability. The poly-Si TFT devices were bias-stressed at V DS ¼ 20 V and V GS ¼ 20 V for 10 4 s to examine the hot-carrier stress ... See full document
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