[PDF] Top 20 Dielectric characteristics of doped Ba1-xSrxTiO3 at the paraelectric state

... The crystal structures obtained from the X-ray diffraction patterns are tetragonal phases for .Y= 0 and 0.25. Inverse of dielectric constant as function of temperatu[r] ... See full document

... effect of direct-current (d.c.) biasing on the dielectric properties of Ba 0:65 Sr 0:35 TiO 3 (BST) with various grain sizes ...in the paraelectric state. ... See full document

... annealing at high temperature, producing a larger degradation in dielectric ...annealed at 500 ° C for seven cycles, each for 1 h. The film interface state was observed by an ... See full document

... Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC b Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan, ROC c ... See full document

... For the plasma-ann samples, the BST structure is amorphous and it is easily attacked by plasma so the plasma damage for the plasma-ann samples is more obvious than that for the ... See full document

... 共Ba,Sr兲TiO 3 (BST). 9 The sol-gel- derived Ag–BTO nanocomposite thin films 8 showed a de- crease in dielectric constant due to a reduction in net polarization of Ag–BTO and an increase ... See full document

... publication 3 January 2002兲 In this letter, we present the results of the fabrication and characterization of 5 mol % MgO doped Ba ...TiO 3 共BST兲 films grown on ... See full document

... of the sintering behavior of the Cr 2 O 3 -doped SBN could be rationalized by the above discussion, more works have been undertaken to justify the detailed ...shows ... See full document

... that of the undoped one 共1.7–2.9 nm兲, 26 the lower grain-boundary resistance, obviously, should not be deter- mined by the grain-boundary ...Regarding the main reason for ... See full document

... Stoichiometric Ba(Zr x Ti 1 ⫺x )O 3 ceramic targets with various Zr contents were ...prepared. The chemical composi- tions of these targets are listed in Table ...BaZrO 3 共purity ... See full document

... explaining the effect of the change in the interface due to annealing on the properties of BST ...films. The thinner interfacial layers of IrO and RuO are suggested ... See full document

... EXPERIMENT The compounds used in this investigation were prepared by a routine solid-state reaction route and starting materials, which included BaCO 3 ...O 3 (99.99% pure, Showa Chemical Co., ... See full document

... phase of the films was characterized by an x-ray diffractometer 共XRD兲 共RU-H3R, Rigaku, ...Japan兲. The high resolution transmission electron microscopy 共TEM兲 共JEM- 3000F, JEOL ...observe ... See full document

... below 1.46 were reported herein to be indicative of porous or less dense materials like FSG and ...density of nanometer-sized pores, with radii of only about 4-12 Å and total volume fraction ... See full document

... 2001 The Electrochemical ...January 3, 2001. As the feature dimension of the device in integrated circuits 共ICs兲 scales down below ...determining the overall IC chip performance, ... See full document

... represent the maximum dielectric constant at zero bias and a certain electric field, ...respectively. The tunable character- istic of Al-doped BSTM films as a function of ... See full document

... Recently, the study of the luminescent properties of the rare-earth 共RE兲 doped materials is strongly motivated be- cause of their various applications in optoelectronic ... See full document

... mixture of BaCO 3 –TiO 2 ...in the BaTiO 3 –TiO 2 system, reported that the upper temperature at which Ba 2 Ti 9 O 20 was stable was near 1300 °C, while O’Bryan and ... See full document

... and dielectric properties of a sandwich structure of Ba ...TiO 3 /Cr/ Ba 0.7 Sr 0.3 TiO 3 (BST/Cr/BST) dielectric are characterized to understand the ... See full document

... DISCUSSION The crystalline nature of the films was identified by x-ray diffraction ...Figure 1共a兲 shows the XRD patterns of 200- ␮ m-thick two-layer films on Pt/TiO 2 /SiO 2 /Si ... See full document