[PDF] Top 20 Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots

Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots

... advantages of long data retention, high-speed operation, thermal robustness, high scalability, and simple structure compatible with the standard comple- mentary metal–oxide–semiconductor (CMOS) ...in ... See full document

5

Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer

... the 2-mol% CaO:ZrO 2 buffer layer to form and rupture the conducting ...CaO:ZrO 2 /ZrO 2 /Pt device exhibits more endurance cycles and no soft ...conductivity ... See full document

3

Effect of top electrode material on resistive switching properties of ZrO2 film memory devices

... influence of top electrode material on the resis- tive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was investigated in ... See full document

3

Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode

... parts of the conduct- ing filaments near Pt electrode which is the anodic side rela- tive to the Ti top ...mechanism of resistive switching behavior remains ...existence of ... See full document

6

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

... influence of top electrode material on the resistive switching properties of MnO 2 -based memory film using Pt as a bottom electrode was investigated in this ... See full document

8

Resistive switching characteristics of Pt/CeOx/TiN memory device

... The resistive switching characteristics of Pt/CeO x /TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory ... See full document

5

Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer

... Schematic resistive switching mechanism of RRAM devices with (a) 50 nm-thick AZTO device, and (b) 35 nm-thick AZTO/ 15 nm-thick HfO 2 bi-layer ...top electrode to the ... See full document

3

Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

... TiN/Ti/SiO 2 /Si substrates as described below. 4-nm-thick HfO 2 layer on TiN bottom electrode was deposited at 250 C by atomic layer deposition ...4-nm-thick ZrO 2 , and ... See full document

5

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

... 2013 Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top ...HfO 2 and ZrO 2 are distinct ... See full document

6

Bipolar resistive switching of chromium oxide for resistive random access memory

... top electrode, while the bottom electrode was ...composition of the as-deposited chromium oxide thin ﬁlm on TiN/SiO 2 /Si subtract without Pt top electrode was analyzed by X-ray ... See full document

4

Growth, dielectric properties, and memory device applications of ZrO2 thin films

... advancement of complementary metal-oxide-semiconductor device technology, SiO 2 was used as an outstanding dielectric and has dominated the microelectronics industry for the last few ...However, ... See full document

20

Bistable resistive switching in Al2O3 memory thin films

... TiO 2 , 8 HfO 2 , 9 ZrO 2 , 10 Nb 2 O 5 , 11 and Cu x O 12 have also been extensively investigated due to their simple compositions which are easily controlled during device ... See full document

4

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

... point of conduc- tive filament for RS property can be limited at a very narrow region at the ZrO 2 /HfO 2 ...the ZrO 2 /HfO 2 interface except near the electrode ... See full document

5

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

... TiN bottom elec- trode (BE) while the Pt top electrode (TE) was ...ReRAM switching behaviors, this study uses the BON thin ﬁlm with and without Gd doping as the ...composition of the ... See full document

5

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

... TiN bottom electrode (BE) while the Pt top electrode (TE) was ...the switching mechanism, HRTEM was performed to analyze this ...Yb 2 O 3 thin ...states of ytterbium and oxygen. ... See full document

4

Memory effect of RF sputtered ZrO2 thin films

... the resistive switching phenomenon can be observed in ZrO 2 -based memory with Pt bottom electrode, indicating that the ZrO 2 bulk film dominates the ... See full document

5

Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

... Effect of ﬁring atmosphere and bottom electrode on resistive switching mode in TiO 2 thin ﬁlms Chun-Hung Lai a, ⁎ , Chih-Yi Liu b , Cheng-Hsing Hsu c , Yi-Mu Lee a , Jenn-Sen Lin ... See full document

2

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

... formation of the conducting bridge from our in situ observation, which is opposite the conventional formation of the conducting bridge via the ECM mechanism, can be explained as due to the different ... See full document

6

Unipolar Resistive Switching in ZrO2 Thin Films

... Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan E-mail: ...Unipolar resistive switching behaviors including bistable memory ... See full document

7

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

... for device densities by scaling dimension is expected to be a major challenge due to the technical and physical ...access memory 共ReRAM兲, have been widely ...one of the attractive materials to ... See full document

4